LM3S3749 Luminary Micro, Inc, LM3S3749 Datasheet - Page 161

• Manufacturer Part Number: LM3S3749
• Description: Lm3s3749 Arm Microcontroller
• Manufacturer: Luminary Micro, Inc

8.2.2
8.2.3
8.2.3.1
June 02, 2008
The internal SRAM of the Stellaris
map. To reduce the number of time consuming read-modify-write (RMW) operations, ARM has
introduced bit-banding technology in the Cortex-M3 processor. With a bit-band-enabled processor,
certain regions in the memory map (SRAM and peripheral space) can use address aliases to access
individual bits in a single, atomic operation.
The bit-band alias is calculated by using the formula:
bit-band alias = bit-band base + (byte offset * 32) + (bit number * 4)
For example, if bit 3 at address 0x2000.1000 is to be modified, the bit-band alias is calculated as:
0x2200.0000 + (0x1000 * 32) + (3 * 4) = 0x2202.000C
With the alias address calculated, an instruction performing a read/write to address 0x2202.000C
allows direct access to only bit 3 of the byte at address 0x2000.1000.
For details about bit-banding, please refer to Chapter 4, “Memory Map” in the ARM® Cortex™-M3
Technical Reference Manual.
ROM Memory
The 16 KB of internal ROM of the Stellaris
memory map and contains the following components:
■
■
■
Flash Memory
The flash is organized as a set of 1-KB blocks that can be individually erased. Erasing a block
causes the entire contents of the block to be reset to all 1s. An individual 32-bit word can be
programmed to change bits that are currently 1 to a 0. These blocks are paired into a set of 2-KB
blocks that can be individually protected. The protection allows blocks to be marked as read-only
or execute-only, providing different levels of code protection. Read-only blocks cannot be erased
or programmed, protecting the contents of those blocks from being modified. Execute-only blocks
cannot be erased or programmed, and can only be read by the controller instruction fetch mechanism,
protecting the contents of those blocks from being read by either the controller or by a debugger.
Flash Memory Timing
The timing for the flash is automatically handled by the flash controller. However, in order to do so,
it must know the clock rate of the system in order to time its internal signals properly. The number
of clock cycles per microsecond must be provided to the flash controller for it to accomplish this
timing. It is software's responsibility to keep the flash controller updated with this information via the
USec Reload (USECRL) register.
On reset, the USECRL register is loaded with a value that configures the flash timing so that it works
with the maximum clock rate of the part. If software changes the system operating frequency, the
new operating frequency minus 1 (in MHz) must be loaded into USECRL before any flash
modifications are attempted. For example, if the device is operating at a speed of 20 MHz, a value
of 0x13 (20-1) must be written to the USECRL register.
A copy of the Serial Flash Loader and vector table
A copy of the peripheral driver library (DriverLib) release for product-specific peripherals and
interfaces
Some pre-loaded code provided for manufacturing tests
®
devices is located at address 0x2000.0000 of the device memory
Preliminary
®
device is located at address 0x0100.0000 of the device
LM3S3749 Microcontroller
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