MT29F16G08FAAWC Micron, MT29F16G08FAAWC Datasheet
MT29F16G08FAAWC
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MT29F16G08FAAWC Summary of contents
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... INTERNAL DATA MOVE operations supported within the plane from which data is read PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40a__1.fm - Rev. B 2/07 EN Products and specifications discussed herein are subject to change by Micron without notice. 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Figure 1: 48-Pin TSOP Type 1 ...
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... For ET devices, contact factory. Valid Part Number Combinations After building the part number from the part numbering chart, verify that the part number is offered and valid by using the Micron Parametric Part Search Web site at www.micron.com/products/parametric. If the device required is not on this list, contact the factory. ...
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... Interleaved TWO-PLANE BLOCK ERASE Operations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .54 RESET Operation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .56 RESET FFh .56 PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40aTOC.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 3 ©2006 Micron Technology, Inc. All rights reserved. Table of Contents ...
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... Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .59 V Power Cycling . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .60 CC Timing Diagrams .65 Package Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .79 PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40aTOC.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 4 ©2006 Micron Technology, Inc. All rights reserved. Table of Contents ...
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... ADDRESS LATCH Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .65 Figure 55: INPUT DATA LATCH Cycle . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .66 PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40aLOF.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 5 ©2006 Micron Technology, Inc. All rights reserved. List of Figures ...
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... Figure 77: 48-Pin TSOP OCPL Type 1 (WC Package Code .80 PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40aLOF.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 6 ©2006 Micron Technology, Inc. All rights reserved. List of Figures ...
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... Table 18: AC Characteristics: Normal Operation .63 Table 19: PROGRAM/ERASE Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .64 PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40aLOT.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 7 ©2006 Micron Technology, Inc. All rights reserved. List of Tables ...
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... PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40a__2.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory General Description Micron Technology, Inc., reserves the right to change products or specifications without notice. 8 ©2006 Micron Technology, Inc. All rights reserved. ...
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... NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 9 General Description x8 48 DNU I/O7 43 I/O6 42 I/ ...
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... Ground connection connect: NCs are not internally connected. They can be driven or left unconnected. Do not use: DNUs must be left unconnected. Micron Technology, Inc., reserves the right to change products or specifications without notice. 10 General Description ©2006 Micron Technology, Inc. All rights reserved. ...
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... Logic RE# WP# R/B# PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40a__2.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Address Register Status Register Command Register Micron Technology, Inc., reserves the right to change products or specifications without notice. 11 Architecture Column Decode NAND Flash Array (2 planes) ...
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... Max Address in Page 0x000000083F 0x000001083F 0x000002083F … … 0x03FFFE083F 0x03FFFF083F Micron Technology, Inc., reserves the right to change products or specifications without notice. 12 Addressing 4,095 8Gb 2 CE#: 4,096 blocks per CE# 8Gb 1 CE#: 8,192 blocks per CE# 16Gb: 8,192 blocks per CE# 2,047 2,111 • ...
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... LOW LOW CA11 PA5 PA4 PA3 BA13 BA12 BA11 LOW LOW LOW Micron Technology, Inc., reserves the right to change products or specifications without notice. 13 Array Organization I/O7 I/O0 1 page = ( bytes) 1 block = (2K + 64) bytes x 64 pages = (128K + 4K) bytes 1 plane = (128K + 4K) bytes x 2,048 blocks = 2,112Mb ...
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... I/O3 I/O2 I/O1 CA3 CA2 CA1 CA11 CA10 CA9 PA3 PA2 PA1 BA11 BA10 BA9 3 LOW BA18 BA17 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. I/O0 CA0 CA8 PA0 BA8 BA16 ...
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... Table 6 on page 19). PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40a__2.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Micron Technology, Inc., reserves the right to change products or specifications without notice. 15 Bus Operation ©2006 Micron Technology, Inc. All rights reserved. ...
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... NAND Flash Memory less than 30ns, use Figure 57 on page 67 for extended data output × Micron Technology, Inc., reserves the right to change products or specifications without notice. 16 Bus Operation t R and transitions HIGH after the t RC, use Figure 56 on page 66 for ...
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... Open drain output I OL Device t Fall t Rise – Rise calculated at 10 percent and 90 percent points. 17 Bus Operation . MAX 3.2V = ------------------------- - Σ 8mA + IL Vcc 3 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. ...
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... 0V/Vcc Micron Technology, Inc., reserves the right to change products or specifications without notice. 18 Bus Operation 12,000 12kΩ Mode Read mode Command input Address input Write mode Command input Address input Data input Sequential read and data output ...
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... Yes 85h 5 Optional 85h 2 Yes 60h 3 No FFh – No A0h 5 Yes A5h 5 No AFh 5 No Micron Technology, Inc., reserves the right to change products or specifications without notice. 19 Command Definitions Valid Command During 1 Cycle 2 Busy Notes 30h No – No – No 35h No E0h No – No – ...
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... E0h 78h 3 – 80h 5 11h-80h 80h 5 11h-80h 85h 5 11h-80h 60h 3 60h Micron Technology, Inc., reserves the right to change products or specifications without notice. 20 Command Definitions Number of Valid Address Command During Cycles Cycle 3 Busy 5 30h No 5 35h No – – No – ...
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... PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40a__2.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory t R), monitor the R/B# signal or, alternatively, issue a READ STATUS (70h) 30h Micron Technology, Inc., reserves the right to change products or specifications without notice. 21 Command Definitions t RC rate (see t R Data output ( serial access) © ...
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... PAGE READ CACHE MODE START 31h; PAGE READ CACHE MODE START LAST 3Fh Micron NAND Flash devices have a cache register that can be used to increase the READ operation speed when accessing sequential pages within a block. First, issue a normal PAGE READ (00h–30h) command sequence. See Figure 14 on page 23 for operation details ...
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Figure 14: PAGE READ CACHE MODE Operation CLE CE# WE# ALE t R R/B# RE# I/Ox 00h Address (5 cycles) 30h t DCBSYR1 t DCBSYR2 31h Data output (serial access) 31h Data output (serial access) t DCBSYR2 3Fh Data output ...
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... PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40a__2.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory REA t WHR Byte 0 Byte 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. 24 Command Definitions Byte 2 Byte 3 Byte 4 ©2006 Micron Technology, Inc. All rights reserved. ...
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... Micron Technology, Inc., reserves the right to change products or specifications without notice. 25 Command Definitions 1 I/O2 I/O1 I/O0 Value Notes 2Ch DCh D3h DCh D3h 0 0 00b ...
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... Ready/busy Ready/busy Ready/busy Ready/busy 3 cache Write protect Write protect Micron Technology, Inc., reserves the right to change products or specifications without notice. 26 Command Definitions t R (transfer from NAND Block Erase Definition Pass/fail 0 = Successful PROGRAM/ERASE 1 = Error in PROGRAM/ERASE – Successful PROGRAM 1 = Error in PROGRAM – ...
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... PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40a__2.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory t CLR t REA 70h Status output Micron Technology, Inc., reserves the right to change products or specifications without notice. 27 Command Definitions t PROG. The READ STATUS ©2006 Micron Technology, Inc. All rights reserved. ...
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... IN D 85h Address (5 cycles) Address (2 cycles Command Definitions t PROG 70h Status I PROGRAM successful I PROGRAM error t PROG D 10h 70h IN Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Status ...
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... Address & Address & 80h 15h 80h data input data input t 1 LPROG Address & Status 10h 70h 2 data input output Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved LPROG 10h ...
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... Command Definitions t PROG Address 10h 70h (5 cycles) t PROG Address Data 85h Data 10h (2 cycles) Unlimited number of repetitions Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Status 70h Status ...
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... OTP commands. Customers can use the OTP area in any way they desire; typical uses include programming serial numbers or other data for permanent storage. In Micron NAND Flash devices, the OTP area leaves the factory in a non-written state (all bits are “1s”). Programming or partial-page programming enables the user to program only “ ...
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... It is possible to program each OTP page a maximum of four times. PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40a__2.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Command Definitions Micron Technology, Inc., reserves the right to change products or specifications without notice PROG). The READ ©2006 Micron Technology, Inc. All rights reserved. ...
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... 00h 00h page bytes serial input x8 device 2,112 bytes Micron Technology, Inc., reserves the right to change products or specifications without notice. 33 Command Definitions PROG 10h 70h PROGRAM READ STATUS command command OTP data written (following “good” status confirmation) Don’ ...
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... PROGRAM command 34 Command Definitions t PROG. The READ STATUS (70h PROG 70h READ STATUS command OTP data protected Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Status 1 Don’t Care ...
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... R) while the data is moved from the OTP page to the data register. The Col OTP 00h 00h 1 page 35 Command Definitions OUT OUT 30h Busy Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. D OUT M Don’t Care ...
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... PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40a__2.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Command Definitions t R. During these transfers, R/B# goes LOW. When the trans- Micron Technology, Inc., reserves the right to change products or specifications without notice. 36 ©2006 Micron Technology, Inc. All rights reserved. ...
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Figure 26: TWO-PLANE PAGE READ Operation CLE WE# ALE RE# Page address M Col Col Row 00h I/Ox add 1 add 2 add 1 Column address J Plane 0 address R/B# CLE WE# ALE RE# I/ ...
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Figure 27: TWO-PLANE PAGE READ Operation with RANDOM DATA READ R/B# RE# 00h Address (5 cycles) 00h Address (5 cycles) I/Ox Plane 0 address Plane 1 address R/B# RE# I/Ox 06h Address (5 cycles) E0h Plane 1 address 1 t ...
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... DBSY, then returns HIGH. The READ t DBSY are READ STATUS (70h) and t PROG). When PROG are READ STATUS (70h), TWO-PLANE/ t PROG Data input 10h 70h Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Status ...
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... Address (5 cycles) (or 81h) 2nd plane address t DBSY, then returns HIGH. The READ t DBSY are READ STATUS (70h) and RESET Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Data input 1 ...
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... Figure 29 on page 40 for an example. PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40a__2.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory Command Definitions t CBSY) is determined by the actual program- Micron Technology, Inc., reserves the right to change products or specifications without notice CBSY ©2006 Micron Technology, Inc. All rights reserved. ...
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... DBSY 11h 80h Address/data input (or 81h) 2nd plane t DBSY 11h Address/data input 80h (or 81h) 2nd plane Micron Technology, Inc., reserves the right to change products or specifications without notice. 42 Command Definitions t CBSY 15h 1 t CBSY 15h 2 t LPROG 10h t R while two pages are read into ...
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... DBSY, write the 80h (or 81h) command to the command register, then write the t PROG are READ STATUS (70h), TWO- 43 Command Definitions t PROG. When program- Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. t DBSY, t DBSY are ...
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... Command Definitions t DBSY 85h Address (5 cycles) 11h 1st-plane destination 85h Data Address (2 cycles) Optional Unlimited number of repetitions t PROG 10h 70h Status Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. 1 11h Data 1 ...
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... NAND Flash Memory t BERS are READ STATUS (70h), TWO-PLANE/MULTIPLE-DIE READ STATUS 60h Address input (3 cycles) D0h 2nd plane Micron Technology, Inc., reserves the right to change products or specifications without notice. 45 Command Definitions t BERS. When block erasure is t BERS 70h ...
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... TWO-PLANE/MULTIPLE-DIE READ STATUS 78h In Micron NAND Flash devices that have two planes, and possibly more than one die in a package that share the same CE# pin possible to independently poll the status register of a particular plane and die using the TWO-PLANE/MULTIPLE-DIE READ STATUS (78h) command ...
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... NAND Flash Memory 80h Address Data 10h Die 2 47 Command Definitions 80h Address Data 10h 80h Address Die 1 Die 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Data 10h ...
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... Die 2 48 Command Definitions Address Status 80h Address Data Die 1 Die 1 80h Address Data 15h 80h Address Die 1 Die 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. 10h Data 15h ...
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... NAND Flash Memory 80h Address Data 15h 78h Die 2 49 Command Definitions Address Status 80h Address Data Die 1 Die 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. 15h ...
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... PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40a__2.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory 80h Address Data 10h 80h Die 1 80h Micron Technology, Inc., reserves the right to change products or specifications without notice. 50 Command Definitions Address Data 11h 80h Address Data Die 2 Die 2 ...
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Figure 40: Interleaved TWO-PLANE PROGRAM PAGE Operation with Status Register Monitoring 80h 11h I/Ox Address Data Die 1 R/B# (die 1 internal) R/B# (die 2 internal) R/B# (external) 80h I/Ox 78h Address Status Die 1 R/B# (die 1 internal) R/B# ...
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... Address Die 1 52 Command Definitions Address Data 11h 80h Address (or 81h) Die 2 Die 2 Data 11h 80h Address Data (or 81h) Die 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Data 15h 1 15h ...
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Figure 42: Interleaved TWO-PLANE PROGRAM PAGE CACHE MODE Operation with Status Register Monitoring 80h Address Data 11h I/Ox Die 1 R/B# (die 1 internal) R/B# (die 2 internal) R/B# (external) I/Ox 78h 80h Address Status Die 1 R/B# (die 1 ...
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... Address D0h 78h Address Status Die 2 Die 1 54 Command Definitions 60h D0h 60h Address Die 1 60h Address D0h Die 1 Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. D0h Address Die 2 ...
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Figure 45: Interleaved TWO-PLANE BLOCK ERASE Operation with R/B# Monitoring I/Ox 60h Address 60h Address D0h Die 1 Die 1 R/B# (die 1 internal) R/B# (die 2 internal) R/B# (external) Notes: 1. Two-plane addressing requirements apply. Figure 46: Interleaved TWO-PLANE ...
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... WB t RST Bit 7 Bit 6 Bit Command Definitions Bit 4 Bit 3 Bit 2 Bit Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Bit 0 Hex 0 E0h 0 60h ...
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... NAND Flash Memory t WW 60h D0h t WW 60h D0h t WW 80h 10h Micron Technology, Inc., reserves the right to change products or specifications without notice. 57 Command Definitions t WW) required from WP# toggling until a ©2006 Micron Technology, Inc. All rights reserved. ...
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... PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40a__2.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory t WW 80h 10h during the endurance life of the product. VB Micron Technology, Inc., reserves the right to change products or specifications without notice. 58 Error Management ) out VB ©2006 Micron Technology, Inc. All rights reserved. ...
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... NAND Flash Memory SS Symbol MT29FxG08xAA V IN MT29FxG08xAA STG Symbol T Commercial A Extended MT29FxG08xAA Vcc Vss Micron Technology, Inc., reserves the right to change products or specifications without notice. 59 Electrical Characteristics Min Max –0.6 +4.6 –0.6 +4.6 –65 +150 – 5 Min Typ Max 0 – +70 – ...
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... V Power Cycling CC Micron NAND Flash devices are designed to prevent data corruption during power tran- sitions. V PROGRAM and ERASE functions are disabled. WP# provides additional hardware protection. WP# should be kept at V 10µs should be allowed for the NAND Flash to initialize before executing any commands (see Figure 52). ...
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... Max Unit 4,016 4,096 blocks 8,032 8,192 8,032 8,192 16,064 16,384 during the endurance life of the device. VB Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Max Unit µ ...
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... Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Notes Notes 1 Unit Notes ...
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... RR t RST – 5/10/500 t WB – 100 t 60 – WHR t WB, even if R/B# is ready. Micron Technology, Inc., reserves the right to change products or specifications without notice. 63 Electrical Characteristics Standard Mode Min Max Unit Notes 10 – ns – – – ...
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... NAND Flash Memory t t PROG (last page) + PROG (last - 1 page) - command load time (last page PROG time may increase for two-plane operations. Micron Technology, Inc., reserves the right to change products or specifications without notice. 64 Electrical Characteristics Typ Max Unit Notes – ...
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... ALS t ALH Col Col add 1 add 2 Micron Technology, Inc., reserves the right to change products or specifications without notice. 65 Timing Diagrams Don’t Care Row Row Row add 1 add 2 add 3 Don’t Care Undefined ©2006 Micron Technology, Inc. All rights reserved. ...
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... RC ≥ 30ns. 66 Timing Diagrams t CLH Final IN t CHZ t REA t COH t RHZ t RHOH D OUT Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Don’t Care Don’t Care ...
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... Timing Diagrams t CHZ t COH t RHZ t RHOH D OUT Don’t Care t CHZ t CEA t COH RHZ t RHOH REA Status output Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Don’t Care ...
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... OUT OUT 30h Busy Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. t CHZ t COH t RHZ t RHOH Don’t Care t RHZ D OUT M Don’t Care ...
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... Don’t Care t CLR t RHW t WHR Col Col OUT 05h E0h add 1 add 2 Column address M Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. t REA D D OUT OUT Don’t Care ...
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Figure 63: PAGE READ CACHE MODE Operation, Part CLE t CLS t CLH CE WE# ALE RE Col Col Row Row I/Ox 00h add 1 add 2 ...
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Figure 64: PAGE READ CACHE MODE Operation, Part CLE t CLS t CLH CE# WE# t CEA ALE REA D D ...
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Figure 65: PAGE READ CACHE MODE Operation without R/B#, Part CLE t t CLS CLH CE WE# ALE RE Col Col Row Row Row I/Ox 00h add ...
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Figure 66: PAGE READ CACHE MODE Operation without R/B#, Part CLE t CLS t CLH CE# WE# t CEA ALE REA D D I/Ox OUT ...
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... Row add 1 add 2 add Byte serial input x8 device 2,112 bytes Micron Technology, Inc., reserves the right to change products or specifications without notice. 74 Timing Diagrams Byte 2 Byte 3 Byte PROG t WHR 10h 70h PROGRAM READ STATUS command command © ...
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... Col 10h add 2 N N+1 PROGRAM Serial input command Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. 10h Don’t Care t WHR 70h Status READ STATUS command Don’t Care ...
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... IN IN 10h add 2 add 1 add 2 add PROGRAM Last page Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. t WHR Status 70h READ STATUS Don’t Care t WHR 70h Status Don’t Care ...
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Figure 73: PROGRAM PAGE CACHE MODE Operation Ending on 15h CLE CE ADL WE# ALE RE# Col Col Row Row Row D I/Ox IN 80h add 1 add 2 add 3 add 1 add 2 N SERIAL ...
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... WB t BERS Row D0h add 3 ERASE command Busy RST 78 Timing Diagrams t WHR Status 70h READ STATUS command I/ Pass I/ Fail Micron Technology, Inc., reserves the right to change products or specifications without notice. ©2006 Micron Technology, Inc. All rights reserved. Don’t Care ...
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... All dimensions are in millimeters. PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40a__2.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory 20.00 ±0.25 18.40 ±0.08 See detail A 1.20 MAX Micron Technology, Inc., reserves the right to change products or specifications without notice. 79 Package Dimensions 0.25 Mold compound: for reference only Epoxy novolac 0.50 TYP ...
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... Customer Comment Line: 800-932-4992 Micron, the M logo, and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of This data sheet contains minimum and maximum limits specified over the complete power supply and temperature range for production devices ...
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... PDF: 09005aef81b80e13/Source: 09005aef81b80eac 4gb_nand_m40a__2.fm - Rev. B 2/07 EN 4Gb, 8Gb, and 16Gb x8 NAND Flash Memory t t CBSY (MAX) and PROG (MAX) to 600µs. Micron Technology, Inc., reserves the right to change products or specifications without notice. 81 Revision History ©2006 Micron Technology, Inc. All rights reserved. ...