X00602MA1AA2 STMicroelectronics, X00602MA1AA2 Datasheet
X00602MA1AA2
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X00602MA1AA2 Summary of contents
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SENSITIVE MAIN FEATURES: Symbol Value I 0.8 T(RMS 600 DRM RRM I 200 GT DESCRIPTION Thanks to highly sensitive triggering levels, the X006 SCR series is suitable for all applications where the available gate current is limited, ...
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X00602MA ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Symbol 140 3 DRM ...
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Fig. 1: Maximum average power dissipation versus average on-state current. P(W) 0.65 0.60 = 180° 0.55 0.50 0.45 0.40 0.35 0.30 0.25 0.20 0.15 0.10 IT(av)(A) 0.05 0.00 0.0 0.1 0.2 0.3 Fig. 2-2: Average and D.C. on-state current versus ...
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X00602MA Fig. 6: Relative variation of dV/dt immunity versus gate-cathode resistance (typical values). dV/dt[Rgk]/dV/dt[Rgk=1k ] 1E+2 1E+1 1E+0 1E-1 Rgk(k ) 1E-2 1E-2 1E-1 Fig. 8: Surge peak on-state current versus number of cycles. ITSM( Nonrepetitive ...
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... No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. © ...