BU4522AF Philips Semiconductors, BU4522AF Datasheet - Page 2

• Manufacturer Part Number: BU4522AF
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
STATIC CHARACTERISTICS
T
DYNAMIC CHARACTERISTICS
T
2 Measured with half sine-wave voltage (curve tracer).
December 1997
Silicon Diffused Power Transistor
hs
SYMBOL
V
C
hs
SYMBOL
I
I
I
BV
V
V
V
h
h
hs
SYMBOL
t
t
t
t
CES
CES
EBO
s
f
s
f
FE
FE
isol
CEOsust
CEsat
BEsat
isol
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
= 25 ˚C unless otherwise specified
EBO
PARAMETER
Repetitive peak voltage from all
three terminals to external
heatsink
Capacitance from T2 to external f = 1 MHz
heatsink
PARAMETER
Collector cut-off current
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
PARAMETER
Switching times (16 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
Switching times (64 kHz line
deflection circuit)
Turn-off storage time
Turn-off fall time
2
CONDITIONS
R.H.
CONDITIONS
V
V
T
V
I
I
L = 25 mH
I
I
I
I
CONDITIONS
f = 16 kHz; I
(I
f = 64 kHz; I
(I
B
B
C
C
C
C
j
B2
B2
BE
BE
EB
= 1 mA
= 0 A; I
= 7 A; I
= 7 A; I
= 1 A; V
= 7 A; V
= 125 ˚C
65 % ; clean and dustfree
= -3.5 A)
= -3.6 A)
= 0 V; V
= 0 V; V
= 7.5 V; I
2
C
B
B
CE
CE
= 100 mA;
= 1.75 A
= 1.75 A
CE
CE
Csat
Csat
= 5 V
= 5 V
C
= V
= V
= 0 A
= 7 A; I
= 6 A; I
CESMmax
CESMmax
B1
B1
;
= 1.4 A;
= 1.2 A;
MIN.
MIN.
0.85
800
7.5
4.2
-
-
-
-
-
-
-
TYP.
TYP.
TYP.
13.5
0.94
285
170
5.8
3.5
2.3
22
10
-
-
-
-
-
-
Product specification
BU4522AF
MAX.
MAX.
MAX.
2500
1.03
400
230
1.0
2.0
1.0
3.0
7.3
4.3
2.7
-
-
-
-
Rev 1.000
UNIT
UNIT
UNIT
mA
mA
mA
pF
ns
ns
V
V
V
V
V
s
s