BU4522AF Philips Semiconductors, BU4522AF Datasheet - Page 4

• Manufacturer Part Number: BU4522AF
• Description: Silicon Diffused Power Transistor
• Manufacturer: Philips Semiconductors

Philips Semiconductors
December 1997
Silicon Diffused Power Transistor
Fig.9. Typical collector-emitter saturation voltage.
100
0.01
10
0.1
10
100
1
0.01
1
10
0.1
1
0.01
hFE
Fig.7. High and low DC current gain.
Fig.8. High and low DC current gain.
VCEsat (V)
VCE = 1 V
VCE = 5 V
Ths = 25 C
Ths = 85 C
0.1
0.1
1
IC / A
1
1
IC/IB = 5
10
10
10
Ths = 25 C
Ths = 85 C
BU4522AF/X
BU4522AF/X
BU4522AF/X
Ths = 25 C
Ths = 85 C
IC / A
IC / A
100
100
100
4
Fig.10. Typical base-emitter saturation voltage.
Fig.11. Typical collector storage and fall time.
Fig.12. Typical collector storage and fall time.
1.3
1.2
1.1
0.9
0.8
0.7
0.6
5
4
3
2
1
0
5
4
3
2
1
0
0
1
0
ts/tf/ us
ts/tf/ us
0
VBEsat \ V
I
I
C
C
= 6 A; T
=7 A; T
0.5
0.5
1
j
j
IC = 7 A
= 85˚C; f = 16kHz
= 85˚C; f = 64 kHz
1
1
2
IC = 6 A
Product specification
BU4522AF/X 16kHz
BU4522AF/X 64kHz
Ths = 85 C
Ths = 85 C
Freq = 16 kHz
Freq = 64 kHz
ICsat = 7 A
ICsat = 6 A
1.5
1.5
3
Ths = 25 C
Ths = 85 C
BU4522AF
IBend / A
IB / A
IB / A
Rev 1.000
4
2
2