BU4522AF Philips Semiconductors, BU4522AF Datasheet - Page 5

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BU4522AF

Manufacturer Part Number
BU4522AF
Description
Silicon Diffused Power Transistor
Manufacturer
Philips Semiconductors
Datasheet

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Philips Semiconductors
December 1997
Silicon Diffused Power Transistor
IBend
-VBB
120
110
100
0.001
0.01
90
80
70
60
50
40
30
20
10
0.1
10
1.0E-07
0
1
Fig.13. Normalised power dissipation.
Fig.14. Transient thermal impedance.
Zth / (K/W)
0
PD%
0.05
0.02
0.5
0.2
0.1
0
Fig.15. Test Circuit RBSOA.
20
1.0E-05
PD% = 100 P
LB
40
60
1.0E-03
t / s
Ths / C
LC
P
80
D
Normalised Power Derating
VCC
D
/P
T.U.T.
with heatsink compound
D 25˚C
t
p
100
T
1.0E-01
D =
120
BU4522AF
T
t
p
t
140
1.0E-01
CFB
VCL
5
Fig.16. Reverse bias safe operating area. T
Fig.17. I
10
9
7
5
3
1
8
6
4
2
0
0
Ic(sat) (A)
30
20
10
0
operation for optimum performance
10
Csat
0
IC / A
during normal running vs. frequency of
20
Horizontal frequency (kHz)
30
500
40
VCE / V
50
60
1000
Product specification
70
BU2522AF
BU4522AF
80
1500
90
Rev 1.000
j
100
T
jmax

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