UNR911AJ Panasonic Semiconductor, UNR911AJ Datasheet - Page 11

• Manufacturer Part Number: UNR911AJ
• Description: Silicon PNP epitaxial planer transistor
• Manufacturer: Panasonic Semiconductor

Transistors with built-in Resistor
–60
–50
–40
–30
–20
–60
–50
–40
–30
–20
–10
–10
–0.1 –0.3
0
6
5
4
3
2
1
0
0
0
0
Characteristics charts of UN911D
Characteristics charts of UN911E
Collector to base voltage V
I
Collector to emitter voltage V
B
Collector to emitter voltage V
=–1.0mA
–2
–2
–0.9mA
I
B
=–1.0mA
–0.8mA –0.7mA
–0.9mA
–4
–4
C
–1
I
I
C
ob
C
–0.4mA
–0.4mA
–0.8mA
— V
— V
–0.5mA
— V
–3
–6
–0.5mA
–6
–0.6mA
–0.6mA
CE
CE
–0.7mA
CB
–10
–8
–8
f=1MHz
I
Ta=25˚C
E
Ta=25˚C
=0
Ta=25˚C
–30
CE
CE
–10
–10
–0.3mA
–0.2mA
–0.1mA
–0.3mA
–0.2mA
–0.1mA
CB
( V )
( V )
( V )
–100
–12
–12
–10000
–0.03
–0.01
–300
–0.03
–0.01
UN9111/9112/9113/9114/9115/9116/9117/9118/9119/9110/
–100
–3000
–1000
–100
–100
–0.3
–0.1
–0.3
–0.1
–30
–30
–30
–10
–10
–10
–3
–3
–3
–1
–1
–1
–0.1 –0.3
–1.5
–0.1 –0.3
911D/911E/911F/911H/911L/UNR911AJ/911BJ/911CJ
Collector current I
Collector current I
–2.0
–25˚C
–25˚C
Input voltage V
V
V
25˚C
CE(sat)
–1
I
CE(sat)
–1
O
–2.5
— V
25˚C
–3
–3
— I
— I
–3.0
IN
–10
–10
Ta=75˚C
IN
C
C
C
C
Ta=75˚C
V
Ta=25˚C
–3.5
( V )
( mA )
( mA )
–30
–30
O
I
I
C
C
=–5V
/I
/I
B
B
=10
=10
–100
–100
–4.0
–0.03
–0.01
–100
–0.3
–0.1
–30
–10
160
120
400
300
200
100
–3
–1
80
40
–0.1 –0.3
0
0
–1
–1
Collector current I
Collector current I
Output current I
–3
–3
–10
–10
V
h
–1
h
FE
FE
IN
— I
— I
–30
— I
–30
–3
C
C
O
–100 –300 –1000
–100 –300 –1000
–10
O
Ta=75˚C
C
C
Ta=75˚C
25˚C
–25˚C
25˚C
–25˚C
V
V
Ta=25˚C
V
( mA )
CE
O
CE
( mA )
( mA )
= –0.2V
–30
= –10V
=–10V
–100
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