2SK665

Manufacturer Part Number2SK665
DescriptionSilicon MOS FETs
ManufacturerPanasonic Semiconductor
2SK665 datasheet
 


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Silicon MOS FETs (Small Signal)
2SK0665 (2SK665)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G Small drive current owing to high input inpedance
G High electrostatic breakdown voltage
I Absolute Maximum Ratings
Parameter
Symbol
Drain to Source voltage
V
Gate to Source voltage
V
Drain current
I
D
Max drain current
I
DP
Allowable power dissipation
P
D
Channel temperature
T
ch
Storage temperature
T
stg
I Electrical Characteristics
(Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current
I
DSS
Gate to Source leakage current
I
GSS
Drain to Source breakdown voltage
V
Gate threshold voltage
V
Drain to Source ON-resistance
R
DS(on)
Forward transfer admittance
| Y
High level output voltage
V
Low level output voltage
V
Input resistance
R
1
Turn-on time
t
on
Turn-off time
t
off
* 1
* 2
Resistance ratio R
/R
= 1/50
t
1
2
on
V
out
200Ω
V
= 5V
GS
V
= 5V
DD
50Ω
(Ta = 25°C)
Ratings
Unit
20
V
DS
8
V
GSO
100
mA
200
mA
150
mW
150
°C
−55 to +150
°C
Conditions
V
= 10V, V
= 0
DS
GS
V
= 8V, V
= 0
GS
DS
I
= 100µA, V
= 0
DSS
D
GS
I
= 100µA, V
= V
th
D
DS
GS
* 3
I
= 20mA, V
= 5V
D
GS
|
I
= 20mA, V
= 5V, f = 1kHz
fs
D
DS
V
= 5V, V
= 1V, R
= 200Ω
OH
DD
GS
L
V
= 5V, V
= 5V, R
= 200Ω
SL
DD
GS
L
* 1
+ R
2
* 2
V
= 5V, V
= 0 to 5V, R
DD
GS
L
* 2
V
= 5V, V
= 5 to 0V, R
DD
GS
L
* 3
, t
measurement circuit
Pulse measurement
off
90%
10%
V
in
V
out
10%
90%
t
t
on
off
Note) The part number in the parenthesis shows conventional part number.
+0.1
0.3
–0.0
3
1
2
(0.65) (0.65)
1.3
±0.1
2.0
±0.2
10°
1: Gate
2: Source
3: Drain
SMini3-G1 Package
Marking Symbol: 3O
Internal Connection
R
1
G
R
2
min
typ
max
10
40
80
20
1.5
3.5
50
20
4.5
1
100
200
= 200Ω
1
= 200Ω
1
unit: mm
+0.10
0.15
–0.05
EIAJ: SC-70
D
S
Unit
µA
µA
V
V
mS
V
V
kΩ
µs
µs
291

2SK665 Summary of contents

  • Page 1

    ... Silicon MOS FETs (Small Signal) 2SK0665 (2SK665) Silicon N-Channel MOS FET For switching I Features G High-speed switching G Small drive current owing to high input inpedance G High electrostatic breakdown voltage I Absolute Maximum Ratings Parameter Symbol Drain to Source voltage V Gate to Source voltage V Drain current I D Max drain current ...

  • Page 2

    Silicon MOS FETs (Small Signal)  240 200 160 120 100 120 140 160 Ambient temperature Ta ( ˚  ...

  • Page 3

    ... No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. ...