2SK65

Manufacturer Part Number2SK65
DescriptionFor Impedance Conversion In Low Frequency
ManufacturerPanasonic Semiconductor
2SK65 datasheet
 


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Silicon Junction FETs (Small Signal)
2SK0065 (2SK65)
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
I Features
G Diode is connected between gate and source
G Low noise voltage
I Absolute Maximum Ratings
Parameter
Symbol
Drain to Source voltage
V
Gate to Drain voltage
V
Drain to Source current
I
DSO
Drain to Gate current
I
DGO
Gate to Source current
I
GSO
Allowable power dissipation
P
D
Operating ambient temperature
T
opr
Storage temperature
T
stg
I Electrical Characteristics
(Ta = 25°C)
Parameter
Symbol
Drain to Source cut-off current
I
DSS
Mutual conductance
g
m
Noise figure
NV
G
Voltage gain
G
G
*
I
rank classification and G
value
DSS
V
Runk
P
I
(mA)
0.04 to 0.2
DSS
> −13
G
(dB)
V1
> −12
G
(dB)
V2
∆| G
− G
| (dB)
< 3
V1
V2
(Ta = 25°C)
Ratings
Unit
12
V
DSO
−12
V
GDO
2
mA
2
mA
2
mA
20
mW
−10 to +70
°C
−20 to +150
°C
Conditions
*
V
= 4.5V, V
= 0, R
= 2.2kΩ ± 1%
DS
GS
S
V
= 4.5V, V
= 0
DS
GS
R
= 2.2kΩ ± 1%, f = 1kHz
S
V
= 4.5V, R
= 2.2kΩ ± 1%
DS
S
C
= 10pF, A-curve
G
V
= 4.5V, R
= 2.2kΩ ± 1%
DS
S
*
V1
C
= 10pF, e
= 100mV, f = 70Hz
G
G
V
= 12V, R
= 2.2kΩ ± 1%
DS
S
*
V2
C
= 10pF, e
= 100mV, f = 70Hz
G
G
V
= 1V, R
= 2.2kΩ ± 1%
DS
S
*
V3
C
= 10pF, e
= 100mV, f = 70Hz
G
G
Q
0.15 to 0.8
> −12
> −11
< 3
Note) The part number in the parenthesis shows conventional part number.
unit: mm
4.0
2.0
±0.2
±0.2
0.75 max.
+0.20
0.45
–0.10
+0.20
0.45
(2.5) (2.5)
–0.10
0.7
±0.1
1: Drain
1
2
3
2: Gate
3: Source
NS-B1 Package
min
typ
max
Unit
0.04
0.8
mA
µS
300
500
µV
4
−10
dB
−9.5
dB
−11
dB
241