S29GL256N10TFI023 ETC, S29GL256N10TFI023 Datasheet - Page 102

• Manufacturer Part Number: S29GL256N10TFI023
• Description: MirrorBit Flash Family
• Manufacturer: ETC

AC Characteristics
Alternate CE# Controlled Erase and Program Operations–S29GL128N Only
Notes:
1. Not 100% tested.
2. See the “AC Characteristics” section for more information.
3. For 1–16 words/1–32 bytes programmed.
4. Effective write buffer specification is based upon a 16-word/32-byte write buffer operation.
5. Unless otherwise indicated, AC specifications for 80 ns and 90 ns speed options are tested with V
102
t
t
JEDEC
t
WHWH1
WHWH2
t
t
t
t
t
t
t
t
t
EHWH
AVWL
DVEH
EHDX
GHEL
WLEL
AVAV
ELAX
ELEH
EHEL
Parameter
specifications for 90 ns and 100 ns speed options are tested with V
t
t
WHWH1
WHWH2
t
Std.
t
t
GHEL
t
t
t
t
t
t
t
CPH
WC
WS
WH
DH
AS
AH
DS
CP
Description
Write Cycle Time (Note 1)
Address Setup Time
Address Hold Time
Data Setup Time
Data Hold Time
Read Recovery Time Before Write
(OE# High to WE# Low)
WE# Setup Time
WE# Hold Time
CE# Pulse Width
CE# Pulse Width High
Write Buffer Program Operation (Notes 2,
3)
Effective Write Buffer
Program Operation (Notes
2, 4)
Effective Accelerated Write
Buffer Program Operation
(Notes 2, 4)
Program Operation (Note 2)
Accelerated Programming
Operation (Note 2)
Sector Erase Operation (Note 2)
S29GLxxxN MirrorBitTM Flash Family
A d v a n c e
Per Word
Per Word
Word
Word
Min
Min
Min
Min
Min
Min
Min
Min
Min
Min
Typ
Typ
Typ
Typ
Typ
Typ
I n f o r m a t i o n
IO
= 1.8 V and V
80
80
Speed Options
90
90
CC
13.5
240
= 3.0 V.
1.0
45
45
45
30
15
60
54
0
0
0
0
0
90
90
IO
= V
27631A4 May 13, 2004
100
100
CC
= 3 V. AC
Unit
sec
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
µs
µs
µs
µs
µs