mtd4n20e Freescale Semiconductor, Inc, mtd4n20e Datasheet - Page 6

• Manufacturer Part Number: mtd4n20e
• Description: Tm Data Sheet Tmos E-fet.tm Power Field Effect Transistor Dpak For Surface Mount
• Manufacturer: Freescale Semiconductor, Inc

MTD4N20E
6
0.01
100
1.0
0.1
10
0.1
0.01
1.0
0.1
1.0E–05
Figure 11. Maximum Rated Forward Biased
V GS = 20 V
SINGLE PULSE
T C = 25°C
0.05
0.2
0.1
D = 0.5
V DS , DRAIN–TO–SOURCE VOLTAGE (VOLTS)
SINGLE PULSE
0.01
1.0
Safe Operating Area
0.02
R DS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
1.0E–04
10
Figure 14. Diode Reverse Recovery Waveform
I S
100
1.0E–03
SAFE OPERATING AREA
Figure 13. Thermal Response
t p
10 s
100 s
1 ms
10 ms
dc
1000
di/dt
t a
t, TIME (s)
1.0E–02
t rr
t b
I S
Motorola TMOS Power MOSFET Transistor Device Data
0.25 I S
80
60
40
P (pk)
20
0
25
Figure 12. Maximum Avalanche Energy versus
DUTY CYCLE, D = t 1 /t 2
t 1
t 2
Starting Junction Temperature
T J , STARTING JUNCTION TEMPERATURE (°C)
1.0E–01
50
TIME
75
R JC (t) = r(t) R JC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t 1
T J(pk) – T C = P (pk) R JC (t)
1.0E+00
100
125
I D = 4 A
1.0E+01
150