mrfe6s9045n Freescale Semiconductor, Inc, mrfe6s9045n Datasheet
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... Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts Volts 350 mA 350 mA Watts, DQ out Document Number: MRFE6S9045N Rev. 0, 10/2007 MRFE6S9045NR1 880 MHz AVG SINGLE N - CDMA LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 1265- 09, STYLE 270 - 2 PLASTIC Symbol Value ...
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... Functional Tests (In Freescale Test Fixture, 50 ohm system CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±750 kHz Offset. PAR = 9 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss MRFE6S9045NR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol ...
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... Vdc 350 mA — 20 — — 68 — — — — 52 — = 350 mA, 865 - 900 MHz Bandwidth — 10 — — 0.72 — — 0.011 — — 0.006 — MRFE6S9045NR1 Unit dBc dBc MHz dB dB/°C dBm/°C 3 ...
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... Taper Z7 0.087″ x 0.525″ Microstrip Z8 0.435″ x 0.525″ Microstrip Z9 0.057″ x 0.525″ Microstrip Figure 1. MRFE6S9045NR1 Test Circuit Schematic Table 6. MRFE6S9045NR1 Test Circuit Component Designations and Values Part B1 Ferrite Bead B2 Ferrite Bead C1, C7, C10, C14 47 pF Chip Capacitors C2, C4, C12 0 ...
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... C15 Figure 2. MRFE6S9045NR1 Test Circuit Component Layout RF Device Data Freescale Semiconductor C7 C10 C11 C9 C18 V DD C16 C17 B2 C14 C13 C12 TO−270/272 Surface / Bolt down MRFE6S9045NR1 5 ...
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... Vdc 880 MHz 880.1 MHz 18 DD Two−Tone Measurements OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRFE6S9045NR1 6 TYPICAL CHARACTERISTICS Vdc (Avg 350 mA out DQ N−CDMA IS−95 Pilot Sync, Paging ...
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... IM7−U IM7−L IM5−U 10 TWO−TONE SPACING (MHz) versus Tone Spacing Ideal Actual −5 −10 25_C −15 85_C −20 25_C −25 −30 −30_C −35 −40 −30_C −45 − −30_C C −55 −60 −65 25_C −70 −75 100 MRFE6S9045NR1 100 7 ...
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... V η 880 MHz OUTPUT POWER (WATTS) CW out Figure 11. Power Gain and Drain Efficiency versus CW Output Power MRFE6S9045NR1 8 TYPICAL CHARACTERISTICS 80 23 −30_C 25_C 70 85_C Vdc 19 = 350 100 Figure 12 ...
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... FREQUENCY (MHz) MRFE6S9045NR1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . ...
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... MHz Z source f = 850 MHz Z Z Figure 16. Series Equivalent Source and Load Impedance MRFE6S9045NR1 Ω 850 MHz Z load f = 910 MHz Vdc 350 mA Avg out source load MHz Ω Ω 850 0.42 + j0.30 3.05 + j1.27 865 0.42 + j0.44 3.16 + j1.33 880 0.45 + j0.60 3.31 + j1.33 895 0.48 + j0.74 3.43 + j1.20 910 ...
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... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRFE6S9045NR1 11 ...
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... MRFE6S9045NR1 12 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRFE6S9045NR1 13 ...
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... AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over - Molded Plastic Packages Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Oct. 2007 • Initial Release of Data Sheet MRFE6S9045NR1 14 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...
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... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRFE6S9045N Rev. 0, 10/2007 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...