mrf7s21080h Freescale Semiconductor, Inc, mrf7s21080h Datasheet
mrf7s21080h
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... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S21080H MRF7S21080HR3 MRF7S21080HSR3 = 28 Volts 2110 - 2170 MHz AVG ...
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... Adjacent Channel Power Ratio Input Return Loss Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF7S21080HR3 MRF7S21080HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS ...
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... W CW, ΔΦ out ΔG ΔP1dB Min Typ Max = 800 mA, 2110 - 2170 MHz Bandwidth — 10 — — 0.12 — — 22.3 — — 6.21 — — 151.6 — — 0.009 — — 0.008 — MRF7S21080HR3 MRF7S21080HSR3 Unit MHz dB ° ns ° dB/°C dBm/°C 3 ...
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... Microstrip Z7 0.374″ x 0.764″ Microstrip Z8 0.180″ x 0.524″ Microstrip Z9* 0.075″ x 0.083″ Microstrip Figure 1. MRF7S21080HR3(HSR3) Test Circuit Schematic Table 5. MRF7S21080HR3(HSR3) Test Circuit Component Designations and Values Part C1, C3, C9, C10, C11 6.8 pF Chip Capacitors C2 0.5 pF Chip Capacitor C4 220 nF Chip Capacitor C5, C12, C13, C14, C15 10 μ ...
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... C17 C2 Figure 2. MRF7S21080HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C4 C12 C3 C10 R3 C11 C14 MRF7S21080H V DD C13 C16 C15 Rev. 1 MRF7S21080HR3 MRF7S21080HSR3 5 ...
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... Vdc 2135 MHz 2145 MHz DD Two−Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S21080HR3 MRF7S21080HSR3 6 TYPICAL CHARACTERISTICS η Vdc (Avg.), I = 800 mA DD out DQ Single−Carrier W−CDMA, 3.84 MHz Channel Bandwidth Input Signal PAR = 7 ...
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... TWO−TONE SPACING (MHz) versus Tone Spacing 70 Ideal Actual −30_C T = −30_C C 25_C 85_C 85_C Vdc 800 2140 MHz 10 100 P , OUTPUT POWER (WATTS) CW out versus CW Output Power MRF7S21080HR3 MRF7S21080HSR3 100 70 60 25_C 200 7 ...
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... W−CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRF7S21080HR3 MRF7S21080HSR3 8 TYPICAL CHARACTERISTICS 800 2140 MHz ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Test Network Z Z source load load W Output Matching Network MRF7S21080HR3 MRF7S21080HSR3 9 ...
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... B 4X (LID (FLANGE) D bbb (LID) ccc M M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) MRF7S21080HR3 MRF7S21080HSR3 10 PACKAGE DIMENSIONS Q bbb (LID ccc (INSULATOR) aaa ...
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... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Nov. 2007 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S21080HR3 MRF7S21080HSR3 11 ...
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... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7S21080HR3 MRF7S21080HSR3 Document Number: MRF7S21080H Rev. 0, 11/2007 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...