mrf7s16150h Freescale Semiconductor, Inc, mrf7s16150h Datasheet
mrf7s16150h
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mrf7s16150h Summary of contents
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... MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. Freescale Semiconductor, Inc., 2007. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF7S16150H MRF7S16150HSR3 = 1500 mA 1600- 1660 MHz AVG ...
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... MHz, WiMAX Signal, 802.16d, 7 MHz Channel Bandwidth, 64 QAM measured in 0.5 MHz Channel Bandwidth @ ±5.25 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF7S16150HR3 MRF7S16150HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...
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... MHz — 20 — — 0.292 — dB — 82.71 — ° — 7.19 — ns — 22.38 — ° — 0.01387 — dB/°C — 0.409 — dBm/°C MRF7S16150HR3 MRF7S16150HSR3 3 ...
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... Z3 0.252″ x 1.240″ Microstrip Z4 0.402″ x 1.240″ Microstrip Z6 0.111″ x 1.330″ Microstrip Figure 1. MRF7S16150HR3(HSR3) Test Circuit Schematic Table 5. MRF7S16150HR3(HSR3) Test Circuit Component Designations and Values Part B1 Small Ferrite Bead C1 10 µ Electrolytic Capacitor C2, C8 0.01 µ Chip Capacitors ...
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... Figure 2. MRF7S16150HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C10 MRF7S16150HR3 MRF7S16150HSR3 5 ...
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... 1625 MHz 1635 MHz Two−Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF7S16150HR3 MRF7S16150HSR3 6 TYPICAL CHARACTERISTICS η Vdc (Avg.), I = 1500 mA, DD out DQ ...
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... Tone Spacing −15 −30_C −20 25_C −25 −30 −30_C −35 −40 −45 − −30_C C −55 85_C −60 −65 25_C −70 −75 100 300 I = 1500 1630 MHz 100 200 P , OUTPUT POWER (WATTS) CW out MRF7S16150HR3 MRF7S16150HSR3 100 32 V 300 7 ...
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... QAM , 4 Bursts, 7 MHz 4 Channel Bandwidth, Input Signal 0.001 PAR = 9 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 13. OFDM 802.16d Test Signal MRF7S16150HR3 MRF7S16150HSR3 8 TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Avg., and η Vdc 25.4%. ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Network Test Z Z source load Output Matching Network MRF7S16150HR3 MRF7S16150HSR3 9 ...
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... B 4X (LID (FLANGE) D bbb (LID) ccc M M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) MRF7S16150HR3 MRF7S16150HSR3 10 PACKAGE DIMENSIONS Q bbb (LID ccc (INSULATOR) aaa ...
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... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 June 2007 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S16150HR3 MRF7S16150HSR3 11 ...
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... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7S16150HR3 MRF7S16150HSR3 Document Number: MRF7S16150H Rev. 0, 6/2007 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...