mrf7s18125bh Freescale Semiconductor, Inc, mrf7s18125bh Datasheet - Page 8

• Manufacturer Part Number: mrf7s18125bh
• Description: N - Channel Enhancement - Mode Lateral Mosfets
• Manufacturer: Freescale Semiconductor, Inc

8
MRF7S18125BHR3 MRF7S18125BHSR3
24
20
16
12
8
4
0
1
V
f = 1960 MHz, EDGE Modulation
DD
Figure 13. EVM and Drain Efficiency versus
= 28 Vdc, I
P
out
DQ
, OUTPUT POWER (WATTS) AVG.
= 1100 mA
10
Output Power
η
D
85_C
−30_C
−30_C
10
10
10
10
10
9
8
7
6
5
90
Figure 15. MTTF versus Junction Temperature
This above graph displays calculated MTTF in hours when the device
is operated at V
MTTF calculator available at http://www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
EVM
100
TYPICAL CHARACTERISTICS
110
T
C
85_C
= 25_C
25_C
130
T
DD
J
, JUNCTION TEMPERATURE (°C)
= 28 Vdc, P
500
60
50
40
30
10
0
20
150
out
170
= 125 W CW, and η
19
18
17
16
15
14
1930
190
Figure 14. Power Gain versus Frequency
210
1940
D
= 55%.
230
T
1950
C
f, FREQUENCY (MHz)
= −30_C
250
25_C
85_C
1960
Freescale Semiconductor
1970
V
P
I
DQ
RF Device Data
DD
out
= 1100 mA
= 125 W CW
= 28 Vdc
1980
1990