mrf7s18125ah Freescale Semiconductor, Inc, mrf7s18125ah Datasheet
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... Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor = 1100 mA out = 28 Volts 1100 mA Reel. Document Number: MRF7S18125AH Rev. 0, 11/2008 MRF7S18125AHR3 MRF7S18125AHSR3 1805- 1880 MHz, 125 W CW GSM, GSM EDGE LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF7S18125AHR3 CASE 465A - 06, STYLE 1 ...
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... Power Gain Drain Efficiency Input Return Loss Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit GG GS(Q) schematic. 2. Part internally matched both on input and output. MRF7S18125AHR3 MRF7S18125AHSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS I ...
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... Vdc 1100 mA out — 17 — — 38 — — 1.75 — — — — — MRF7S18125AHR3 MRF7S18125AHSR3 Unit W MHz MHz dB ° ns ° dB/°C dBm/° rms dBc dBc 3 ...
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... Z5 0.092″ x 1.000″ Microstrip Z6 0.095″ x 1.000″ Microstrip Z7 0.565″ x 1.000″ Microstrip Figure 1. MRF7S18125AHR3(HSR3) Test Circuit Schematic Table 5. MRF7S18125AHR3(HSR3) Test Circuit Component Designations and Values Part C1 1 μ Chip Capacitor C2, C3, C4, C5 4.7 μ Chip Capacitors C6 220 μ Electrolytic Chip Capacitor C7, C8, C9, C10, C11 8 ...
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... C12 C7 Figure 2. MRF7S18125AHR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C13 C14 C15 C4 C11 MRF7S18125AH Rev. 0 MRF7S18125AHR3 MRF7S18125AHSR3 C10 C5 5 ...
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... DQ 17 825 mA 16 1100 mA 550 Vdc 1840 MHz OUTPUT POWER (WATTS) CW out Figure 5. Power Gain versus Output Power MRF7S18125AHR3 MRF7S18125AHSR3 6 TYPICAL CHARACTERISTICS = 28 Vdc DD = 125 W CW 1100 mA out η D IRL 1820 1830 1840 1850 1860 1870 ...
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... FREQUENCY (MHz) 600 kHz versus Frequency 25_C 85_C T = −30_C Vdc 1100 1840 MHz, EDGE Modulation 100 120 140 160 P , OUTPUT POWER (WATTS) out versus Output Power MRF7S18125AHR3 MRF7S18125AHSR3 300 1880 180 200 7 ...
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... MHz, EDGE Modulation 16 12 η 85_C OUTPUT POWER (WATTS) AVG. out Figure 13. EVM and Drain Efficiency versus Output Power MRF7S18125AHR3 MRF7S18125AHSR3 8 TYPICAL CHARACTERISTICS 60 19 25_C 85_C 50 18 −30_C EVM 25_C C 0 ...
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... Center 1.96 GHz RF Device Data Freescale Semiconductor GSM TEST SIGNAL Reference Power VWB = 30 kHz Sweep Time = 70 ms RBW = 30 kHz 400 kHz 600 kHz 200 kHz Figure 16. EDGE Spectrum 400 kHz 600 kHz Span 2 MHz MRF7S18125AHR3 MRF7S18125AHSR3 9 ...
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... Figure 17. Series Equivalent Source and Load Impedance MRF7S18125AHR3 MRF7S18125AHSR3 Ω 1920 MHz Z load f = 1920 MHz f = 1760 MHz 1760 MHz source Vdc 1100 mA 125 out source load MHz W W 1760 1.30 - j3.17 1.44 - j2.62 1780 1.27 - j3.05 1.41 - j2.47 1800 1.24 - j2.92 1.39 - j2.32 1820 1.21 - j2.80 1.37 - j2.17 1840 1 ...
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... Pulsed μsec(on), 10% Duty Cycle, f =1840 MHz INPUT POWER (dBm) in Test Impedances per Compression Level Z Z source Ω P1dB 0.60 - j2.81 1.05 - j2.36 Figure 18. Pulsed CW Output Power versus Input Power @ 28 V Ideal Actual load Ω MRF7S18125AHR3 MRF7S18125AHSR3 11 ...
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... U 4X (FLANGE (FLANGE) D bbb (LID) ccc M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) MRF7S18125AHR3 MRF7S18125AHSR3 12 PACKAGE DIMENSIONS Q 2X bbb ccc aaa ...
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... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Nov. 2008 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF7S18125AHR3 MRF7S18125AHSR3 13 ...
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... Denver, Colorado 80217 1 - 800- 441- 2447 303- 675- 2140 Fax 303- 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF7S18125AHR3 MRF7S18125AHSR3 Document Number: MRF7S18125AH Rev. 0, 11/2008 14 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...