mrf21120 Freescale Semiconductor, Inc, mrf21120 Datasheet

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mrf21120

Manufacturer Part Number
mrf21120
Description
The Rf Sub-micron Mosfet Line Rf Power Field Effect Trasistor N-channel Enhancement-mode Lateral Mosfet
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in Class AB for PCN–PCS/cellular radio and WLL
applications.
• W–CDMA Performance @ –45 dBc, 5 MHz Offset, 15 DTCH, 1 Perch
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2170 MHz, 120 Watts (CW)
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 7
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for W–CDMA base station applications with frequencies from 2110
Output Power
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 14 Watts (Avg.)
Power Gain — 11.5 dB
Efficiency — 16%
C
= 25°C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
stg
GS
D
J
CASE 375D–04, STYLE 1
LATERAL N–CHANNEL
MRF21120
2170 MHz, 120 W, 28 V
RF POWER MOSFET
NI–1230
M3 (Minimum)
1 (Minimum)
–65 to +150
–0.5, +15
Value
Class
2.22
Max
0.45
389
200
65
Order this document
by MRF21120/D
MRF21120
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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mrf21120 Summary of contents

Page 1

... NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 7 MOTOROLA RF DEVICE DATA © Motorola, Inc. 2002 Order this document by MRF21120/D MRF21120 2170 MHz, 120 LATERAL N–CHANNEL RF POWER MOSFET CASE 375D–04, STYLE 1 NI–1230 ...

Page 2

... DD out 2110.0 MHz 2110.1 MHz) Power Output Compression Point ( Vdc, CW 500 mA 2170.0 MHz (1) Each side of device measured separately. (2) Device measured in push–pull configuration. MRF21120 2 = 25°C unless otherwise noted) Symbol V (BR)DSS I GSS I DSS GS(th) ...

Page 3

... GHz, VSWR = 10:1, All Phase Angles at Frequency of Tests) (2) Device measured in push–pull configuration. MOTOROLA RF DEVICE DATA (T = 25°C unless otherwise noted) C Symbol Min G — ps 500 mA, η — 500 mA, Ψ 500 mA, Typ Max Unit 10.5 — — Degradation In Output Power Before and After Test MRF21120 3 ...

Page 4

... R3, R4 270 Ω, 1/8 W Fixed Film Chip Resistors, Dale R5, R6 1.2 kΩ, 1/8 W Fixed Film Chip Resistors, Dale Z1 0.150″ x 0.080″ Microstrip Figure 1. 2.1 – 2.2 GHz Broadband Test Circuit Schematic MRF21120 4 Z2 0.320″ x 0.080″ Microstrip Z4, Z5 1.050″ x 0.080″ Microstrip Z6, Z7 0.120″ ...

Page 5

... Figure 2. 2.1 – 2.2 GHz Broadband Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF21120 5 ...

Page 6

... Figure 3. Power Gain versus Output Power η Figure 5. Class AB Broadband Circuit Performance η Figure 7. Power Gain, Efficiency, ACPR versus Output Power (W–CDMA) MRF21120 6 TYPICAL CHARACTERISTICS Figure 4. Intermodulation Distortion versus Output Power Figure 6. 2.17 GHz W–CDMA Mask at 14 Watts (Avg.), 5 MHz Offset, 15 DTCH, 1 Perch Figure 8 ...

Page 7

... Figure 9. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA source load MHz Ω Ω 2110 3.7 + j2.0 4.9 + j2.8 2140 3.5 + j2.4 5.1 + j2.7 2170 3.1 + j2.5 5.2 + j2.5 = Test circuit impedance as measured from gate to gate, balanced configuration. = Test circuit impedance as measured from drain to drain, balanced configuration source load Ω MRF21120 7 ...

Page 8

... HOME PAGE: http://www.motorola.com/semiconductors/ MRF21120 ◊ 8 PACKAGE DIMENSIONS (FLANGE) R (LID (INSULATOR) SEATING T PLANE CASE 375D–04 ISSUE C NI–1230 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MOTOROLA RF DEVICE DATA MRF21120/D ...

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