mrf21060lr3 Freescale Semiconductor, Inc, mrf21060lr3 Datasheet

no-image

mrf21060lr3

Manufacturer Part Number
mrf21060lr3
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
2 1 0 0 t o 2 2 0 0 M H z . S u i t a b l e f o r W - C D M A , C D M A , T D M A , G S M a n d
multicarrier amplifier applications.
• Typical 2 - Carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW
Features
• Internally Matched for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 Inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for PCN and PCS base station applications with frequencies from
P
MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
40
Derate above 25°C
out
Power Gain — 12.5 dB
Drain Efficiency — 15%
ACPR @ 5 MHz Offset — - 47 dBc in 3.84 MHz Channel Bandwidth
μ″
= 6 Watts Avg., Full Frequency Band, Channel Bandwidth = 3.84
Nominal.
C
= 25°C
Test Conditions
Characteristic
Rating
DD
= 28 Volts, I
DQ
= 500 mA,
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
CASE 465A - 06, STYLE 1
CASE 465 - 06, STYLE 1
Document Number: MRF21060
2110 - 2170 MHz, 60 W, 28 V
MRF21060LSR3
MRF21060LSR3
MRF21060LR3
MRF21060LR3
LATERAL N - CHANNEL
MRF21060LR3 MRF21060LSR3
RF POWER MOSFETs
NI - 780S
NI - 780
M3 (Minimum)
2 (Minimum)
- 65 to +150
- 0.5, +65
- 0.5, +15
Value
Value
Class
0.98
1.02
180
150
200
Rev. 9, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

Related parts for mrf21060lr3

mrf21060lr3 Summary of contents

Page 1

... MHz LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF21060LR3 CASE 465A - 06, STYLE 780S MRF21060LSR3 Value Unit - 0.5, +65 Vdc - 0.5, +15 Vdc 180 W D 0.98 W/° +150 °C 150 °C C 200 °C J Value Unit 1.02 °C/W Class 2 (Minimum) M3 (Minimum) MRF21060LR3 MRF21060LSR3 1 ...

Page 2

... DD out 2110 MHz and 2170 MHz, Tone Spacing = 100 kHz Compression Point out ( Vdc CW 2170 MHz) DD out 1. Part is internally matched both on input and output. MRF21060LR3 MRF21060LSR3 2 = 25°C unless otherwise noted) C Symbol V (BR)DSS I DSS I GSS V GS(th) V ...

Page 3

... Microstrip Z12 0.097″ x 0.525″ Microstrip Z13 0.353″ x 0.138″ Microstrip Z14 0.112″ x 0.080″ Microstrip Z15 0.722″ x 0.080″ Microstrip ® Board 0.030″ Glass Teflon , Arlon GX - 0300- 55- 22 MRF21060LR3 MRF21060LSR3 OUTPUT 3 ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF21060L Test Circuit Component Layout MRF21060LR3 MRF21060LSR3 ...

Page 5

... 2140 MHz Two−Tone Measurement, 100 kHz Tone Spacing IMD DRAIN VOLTAGE (VOLTS) DD Figure 8. Power Gain and MRF21060LR3 MRF21060LSR3 −20 −25 −30 −35 −40 −45 −50 −55 −60 16 100 −22 −24 −26 −28 −30 −32 − ...

Page 6

... Figure 9. Series Equivalent Source and Load Impedance MRF21060LR3 MRF21060LSR3 2110 MHz Z source f = 2110 MHz 2170 MHz Z load 2170 MHz = 5 Ω 500 mA PEP DD DQ out source load MHz Ω Ω 2110 2.40 - j0.55 3.07 - j2.05 2140 2.26 - j0.87 2.89 - j2.38 2170 2.08 - j1.23 2.66 - j2. Test circuit impedance as measured from source gate to ground ...

Page 7

... U −−− 0.040 −−− 1. −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF S (INSULATOR) bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF B M STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE F MRF21060LR3 MRF21060LSR3 9.91 4.32 1.14 0.15 1.70 5.33 3.51 9.53 9.52 7 ...

Page 8

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF21060LR3 MRF21060LSR3 Document Number: MRF21060 Rev. 9, 5/2006 8 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

Related keywords