mrf9820t1 Freescale Semiconductor, Inc, mrf9820t1 Datasheet

mrf9820t1

Manufacturer Part Number

mrf9820t1

Description

Rf Small Signal Line Gaas Mesfet Agc Amplifier

Manufacturer

Freescale Semiconductor, Inc

Datasheet

1.MRF9820T1.pdf (4 pages)

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MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

Advance Information

The RF Small Signal Line

GaAs MESFET AGC Amplifier

in low noise front end amplifier or downconverter applications. The device

contains two enhancement mode MESFETs connected in cascode to allow

access to both gates for gain control or injection of LO signals. This device is

well suited for low voltage, low current front–end applications such as paging,

cellular, GSM, DECT, and other portable wireless systems.

MAXIMUM RATINGS

THERMAL CHARACTERISTICS

ELECTRICAL CHARACTERISTICS

MOTOROLA RF DEVICE DATA

Drain–Source Voltage

Gate 1–Source Voltage

Gate 2–Source Voltage

Drain Current — Continuous

Total Device Dissipation @ T C = 75 C

Storage Temperature Range

Operating Channel Temperature

Thermal Resistance, Channel to Case

Gate 1 Leakage Current (V DS = 2 V, V G1S = 0.425 V, V G2S = 1 V)

Gate 2 Leakage Current (V DS = 2 V, V G1S = 0.5 V, V G2S = 0.425 V)

Threshold Voltage (V DS = 3 V, V G2S = 1 V, I D = 1 mA)

Gate 1–to–Source Cutoff Voltage (V DS = 2 V, V G2S = 1 V, I D = 200 A)

Gate 2–to–Source Cutoff Voltage (V DS = 2 V, V G1S = 0.5 V, I D = 200 A)

Forward Transconductance (V DS = 2 V, V G2S = 1 V, I D = 1 mA)

Drain–to–Source Leakage Current (V DS = 2 V, V G1S = 0 V, V G2S = 0 V)

The MRF9820T1 is a high performance GaAs AGC amplifier suitable for use

Motorola, Inc. 1997

Low Noise Figure: 1.5 dB @ 940 MHz, 1 mA

Built In ESD Protection

Does Not Require a Negative Supply Voltage

RF Power Gain 16 dB @ 940 MHz, 1 mA

High Third Order Intercept Point

Industry Standard SOT–143 Surface Mount Package

Order MRF9820T1 for Tape and Reel Packaging.

T1 Suffix = 3,000 Units per 8 mm, 7 inch Reel.

Derate above 75 C

NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and

packaging MOS devices should be observed.

Characteristic

Rating

(T C = 25 C unless otherwise noted)

V G1S(off)

V G2S(off)

Symbol

I DS(off)

Symbol

R ch–C

I G1S

I G2S

V G1S

V G2S

V th

g m

V DS

T stg

T ch

P D

I D

MRF9820T1

ENHANCEMENT MODE

CASE 318A–05, STYLE 11

SURFACE MOUNT

GaAs CASCODE

– 55 to +150

425 (max)

360 (max)

370 (max)

275 (min)

100 (min)

LOW NOISE

10 (min)

2 (max)

9 (min)

Value

(SOT–143)

I DSS

Max

231

150

325

4.3

–4

Order this document

by MRF9820T1/D

MRF9820T1

mW/ C

Unit

Vdc

C/W

—

Related parts for mrf9820t1

mrf9820t1 Summary of contents

Page 1

... Advance Information The RF Small Signal Line GaAs MESFET AGC Amplifier The MRF9820T1 is a high performance GaAs AGC amplifier suitable for use in low noise front end amplifier or downconverter applications. The device contains two enhancement mode MESFETs connected in cascode to allow access to both gates for gain control or injection of LO signals. This device is well suited for low voltage, low current front– ...

Page 2

... RF Power Gain ( 1 mA 940 MHz) Noise Figure ( 1 mA 940 MHz) Input Third Order Intercept Point GATE 1 Figure 1. Electrical Schematic of GaAs AGC Amplifier MRF9820T1 unless otherwise noted) Symbol SOURCE GATE 2 ...

Page 3

... V G1S , GATE 1–SOURCE VOLTAGE (V) Figure 3. Drain Current versus 2 0.2 V G2S , GATE 2–SOURCE VOLTAGE (V) Figure 5. Drain Current versus V G2S = 1.0 V 0.8 V 0.6 V 0.4 V 0.2 V 0.4 0.6 0.8 1.0 V G1S ; Stepping V G2S V G1S = 0.6 V 0.2 V 0.5 V 0.4 V 0.3 V 0.4 0.6 0.8 1.0 V G2S ; Stepping V G1S MRF9820T1 3 ...

Page 4

... ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, INCHES MAX MIN MAX 3.04 0.110 0.120 1.39 0.047 0.055 1.14 0.033 0.045 0.50 0.015 0.020 0.93 0.031 0.037 2.03 0.070 0.080 0.10 0.0005 0.004 0.15 0.003 0.006 0.60 0.018 0.024 0.60 0.0175 0.024 0.83 0.028 0.033 2.48 0.083 0.098 Mfax is a trademark of Motorola, Inc. MRF9820T1/D MOTOROLA RF DEVICE DATA ...

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