mrf9045m Freescale Semiconductor, Inc, mrf9045m Datasheet

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mrf9045m

Manufacturer Part Number
mrf9045m
Description
Mosfet Line
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Part Number:
mrf9045mR1
Manufacturer:
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistor
N–Channel Enhancement–Mode Lateral MOSFET
cies up to 1.0 GHz. The high gain and broadband performance of this device
make it ideal for large–signal, common–source amplifier applications in 28 volt
base station equipment.
(1) Simulated
MAXIMUM RATINGS
ESD PROTECTION CHARACTERISTICS
THERMAL CHARACTERISTICS
REV 0
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T C = 25 C
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications at frequen-
Motorola, Inc. 2000
Typical Performance at 945 MHz, 28 Volts
Integrated ESD Protection
Guaranteed Ruggedness @ Load VSWR = 5:1, @ 28 Vdc, 945 MHz,
45 Watts (CW) Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance
Parameters
Moisture Sensitivity Level 3
RF Power Plastic Surface Mount Package
Available in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
Derate above 25 C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power – 45 Watts PEP
Power Gain – 18.5 dB
Efficiency – 41% (Two Tones)
IMD – –31 dBc
Test Conditions
Characteristic
Rating
Symbol
Symbol
V DSS
R JC
V GS
T stg
P D
T J
MRF9045MR1
MRF9045M
CASE 1265–06, STYLE 1
LATERAL N–CHANNEL
RF POWER MOSFET
945 MHz, 45 W, 28 V
M2 (Typical)
– 65 to +150
1 (Typical)
+ 15, – 0.5
BROADBAND
MRF9045M MRF9045MR1
1.25 (1)
156 (1)
Value
Class
0.8 (1)
Max
150
65
(TO–270)
PLASTIC
Order this document
by MRF9045M/D
Watts
W/ C
Unit
Unit
Vdc
Vdc
C/W
C
C
1

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mrf9045m Summary of contents

Page 1

... NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 MOTOROLA RF DEVICE DATA Motorola, Inc. 2000 Order this document by MRF9045M/D MRF9045M MRF9045MR1 945 MHz LATERAL N–CHANNEL BROADBAND RF POWER MOSFET CASE 1265– ...

Page 2

... Vdc Adc) Forward Transconductance ( Vdc Adc) DYNAMIC CHARACTERISTICS Input Capacitance ( Vdc MHz) Output Capacitance ( Vdc MHz) Reverse Transfer Capacitance ( Vdc MHz) MRF9045M MRF9045MR1 2 Symbol Min Typ I DSS — — I DSS — ...

Page 3

... MOTOROLA RF DEVICE DATA ( unless otherwise noted) Symbol Min Typ 18.5 38 IMD — –31 IRL — 18.5 — IMD — –31 IRL — Max Unit — — % –28 dBc 15 — dB — — % — dBc 13 — dB MRF9045M MRF9045MR1 3 ...

Page 4

... Chip Capacitor, B Case C17 220 Electrolytic Capacitor L1, L2 12.5 nH, Inductors Z1 0.20 x 0.08 Z2 0.57 x 0.12 Figure 1. 945 MHz Broadband Test Circuit Schematic C6 V bias Ground Figure 2. 945 MHz Broadband Test Circuit Components Layout MRF9045M MRF9045MR1 DUT ...

Page 5

... P out , OUTPUT POWER (WATTS) PEP Output Power 3rd Order 5th Order 7th Order 10 100 versus Output Power 0 0 350 945 MHz Two–Tone Measurement 100 kHz Tone Spacing DRAIN VOLTAGE (VOLTS) MRF9045M MRF9045MR1 5 ...

Page 6

... Complex conjugate of the optimum load Note was chosen based on tradeoffs between gain, output Input Matching Network Figure 9. Series Equivalent Input and Output Impedance MRF9045M MRF9045MR1 Ω 930 MHz f = 945 MHz 350 mA, P out = 45 W (PEP) ...

Page 7

... MAX A .076 .084 1.93 2.13 A1 .038 .044 0.96 1.12 A2 .040 .042 1.02 1.07 D .416 .424 10.57 10.77 D1 .376 .384 9.55 9.75 D2 .290 .320 7.37 8.13 D3 .016 .024 0.41 0.61 E .436 .444 11.07 11.28 E1 .236 .244 5.99 6.20 E2 .066 .074 1.68 1.88 E3 .150 .180 3.81 4.57 E4 .058 .066 1.47 1.68 F .025 BSC 0.64 BSC b1 .193 .199 4.90 5.06 c1 .007 .011 0.18 0.28 aaa .004 0.10 STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF9045M MRF9045MR1 7 ...

Page 8

... ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9045M MRF9045MR1 8 are registered trademarks of Motorola, Inc. Motorola, Inc Equal MOTOROLA RF DEVICE DATA ...

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