mrf9030n Freescale Semiconductor, Inc, mrf9030n Datasheet - Page 5

• Manufacturer Part Number: mrf9030n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
21.5
20.5
19.5
18.5
−10
−20
−30
−40
−50
−60
−70
−80
21
20
19
0.1
0.1
Figure 7. Intermodulation Distortion Products
Figure 5. Power Gain versus Output Power
V
I
f1 = 945 MHz
f2 = 945.1 MHz
DQ
DD
= 250 mA
= 26 Vdc
I
300 mA
250 mA
200 mA
DQ
P
P
= 375 mA
out
out
versus Output Power
, OUTPUT POWER (WATTS) PEP
, OUTPUT POWER (WATTS) PEP
1
1
22
21
20
19
18
17
16
15
14
930
Figure 4. Class AB Broadband Circuit Performance
3rd Order
5th Order
7th Order
V
f1 = 945 MHz
f2 = 945.1 MHz
DD
G
η
IMD
IRL
ps
= 26 Vdc
10
10
935
TYPICAL CHARACTERISTICS
940
f, FREQUENCY (MHz)
100
100
945
V
P
I
Two−Tone, 100 kHz Tone Spacing
DQ
DD
out
= 250 mA
= 26 Vdc
= 30 W (PEP)
22
20
18
16
14
12
10
0.1
−15
−20
−25
−30
−35
−40
−45
−50
−55
950
Figure 8. Power Gain and Efficiency versus
0.1
Figure 6. Intermodulation Distortion versus
955
G
η
P
ps
out
, OUTPUT POWER (WATTS) AVG.
P
out
I
DQ
250 mA
, OUTPUT POWER (WATTS) PEP
1
960
Output Power
= 200 mA
50
45
40
35
−30
−32
−34
−36
−38
1
Output Power
MRF9030NR1 MRF9030NBR1
300 mA
−10
−12
−14
−16
−18
375 mA
10
10
V
I
f = 945 MHz
DQ
DD
= 250 mA
V
f1 = 945 MHz
f2 = 945.1 MHz
= 26 Vdc
DD
= 26 Vdc
100
60
50
40
30
20
10
0
100
5