mrf9030l Freescale Semiconductor, Inc, mrf9030l Datasheet

no-image

mrf9030l

Manufacturer Part Number
mrf9030l
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
mrf9030lR1
Manufacturer:
FREESCALE
Quantity:
1 400
Part Number:
mrf9030lR1
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
cies up to 1000 MHz. The high gain and broadband performance of these
devices make them ideal for large - signal, common - source amplifier applica-
tions in 26 volt base station equipment.
• Typical Two - Tone Performance at 945 MHz, 26 Volts
• Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW
Features
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40μ″ Nominal.
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. ESD Protection Characteristics
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Human Body Model
Machine Model
Designed for broadband commercial and industrial applications with frequen-
Output Power
Derate above 25°C
Output Power — 30 Watts PEP
Power Gain — 19 dB
Efficiency — 41.5%
IMD — - 32.5 dBc
C
= 25°C
Test Conditions
Characteristic
Rating
MRF9030LR1
MRF9030LSR1
MRF9030LR1
MRF9030LSR1
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF9030
MRF9030LSR1
LATERAL N - CHANNEL
CASE 360B - 05, STYLE 1
CASE 360C - 05, STYLE 1
RF POWER MOSFETs
MRF9030LR1
945 MHz, 30 W, 26 V
M1 (Minimum)
MRF9030LR1 MRF9030LSR1
1 (Minimum)
- 65 to +150
BROADBAND
- 0.5, +68
- 0.5, + 15
MRF9030LSR1
MRF9030LR1
Value
Value
Class
0.53
0.67
117
150
200
1.9
1.5
92
NI - 360S
NI - 360
Rev. 6, 4/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

Related parts for mrf9030l

mrf9030l Summary of contents

Page 1

... MHz LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 360B - 05, STYLE 360 MRF9030LR1 CASE 360C - 05, STYLE 360S MRF9030LSR1 Value Unit - 0.5, +68 Vdc - 0. Vdc 92 W 0.53 W/°C 117 0. +150 °C 150 °C 200 °C Value Unit 1.9 °C/W 1.5 Class 1 (Minimum) M1 (Minimum) MRF9030LR1 MRF9030LSR1 1 ...

Page 2

... Adc Dynamic Characteristics Input Capacitance ( Vdc ± 30 mV(rms) MHz Output Capacitance ( Vdc ± 30 mV(rms) MHz Reverse Transfer Capacitance ( Vdc ± 30 mV(rms) MHz MRF9030LR1 MRF9030LSR1 2 = 25°C unless otherwise noted) C Symbol I DSS I DSS I GSS V GS(th) V GS(Q) V ...

Page 3

... 250 mA, η = 250 mA, IMD = 250 mA, IRL = 250 mA, P 1dB G ps η Min Typ Max 18 19 — 37 41.5 — — — — 19 — — 41.5 — — — — — — 30 — — 19 — — 60 — MRF9030LR1 MRF9030LSR1 Unit dB % dBc dBc ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. 945 MHz Broadband Test Circuit Component Layout MRF9030LR1 MRF9030LSR1 ...

Page 5

... I = 200 mA DQ 250 mA 300 mA 375 100 P , OUTPUT POWER (WATTS) PEP out Output Power G ps η OUTPUT POWER (WATTS) AVG. out Output Power MRF9030LR1 MRF9030LSR1 100 5 ...

Page 6

... This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide MTTF factor by I Figure 9. MTTF Factor versus Junction Temperature MRF9030LR1 MRF9030LSR1 6 TYPICAL CHARACTERISTICS Vdc η ...

Page 7

... Z Z source load MHz Ω Ω 930 1.34 - j0.1 3.175 + j0.09 945 1.36 - j0.2 3.1 + j0.08 960 1.4 - j0.14 3.0 + j0. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRF9030LR1 MRF9030LSR1 7 ...

Page 8

... MRF9030LR1 MRF9030LSR1 8 NOTES RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF9030LR1 MRF9030LSR1 9 ...

Page 10

... MRF9030LR1 MRF9030LSR1 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... B 0.225 0.235 5.72 5.97 C 0.105 0.155 2.67 3.94 D 0.210 0.220 5.33 5.59 E 0.035 0.045 0.89 1.14 F 0.004 0.006 0.10 0.15 H 0.057 0.067 1.45 1.70 K 0.085 0.115 2.16 2.92 M 0.355 0.365 9.02 9.27 N 0.357 0.363 9.07 9.22 R 0.227 0.23 5.77 5.92 S 0.225 0.235 5.72 5.97 aaa 0.005 REF 0.13 REF bbb 0.010 REF 0.25 REF ccc 0.015 REF 0.38 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF9030LR1 MRF9030LSR1 11 ...

Page 12

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF9030LR1 MRF9030LSR1 Document Number: Document Number: MRF9030 Rev. 6, 4/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

Related keywords