mrf9060mr1 Freescale Semiconductor, Inc, mrf9060mr1 Datasheet

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mrf9060mr1

Manufacturer Part Number
mrf9060mr1
Description
Sub-micron Mosfet Line Power Field Effect Transistors N-channel Enhancement-mode Lateral Mosfets
Manufacturer
Freescale Semiconductor, Inc
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Sub–Micron MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
cies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large–signal, common–source amplifier applications in
26 volt base station equipment.
• Typical Performance at 945 MHz, 26 Volts
• Integrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 60 Watts CW
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• TO–270 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per
• TO–272 Dual Lead Available in Tape and Reel. R1 Suffix = 500 Units per
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
REV 4
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for broadband commercial and industrial applications with frequen-
Output Power
24 mm, 13 inch Reel.
44 mm, 13 inch Reel.
Derate above 25°C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 60 Watts PEP
Power Gain — 18.0 dB
Efficiency — 40% (Two Tones)
IMD — –31.5 dBc
C
= 25°C
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
MRF9060MBR1
MRF9060MR1
LATERAL N–CHANNEL
RF POWER MOSFETs
MRF9060MR1 MRF9060MBR1
CASE 1337–01, STYLE 1
CASE 1265–07, STYLE 1
945 MHz, 60 W, 26 V
TO–272 DUAL LEAD
TO–270 DUAL LEAD
–65 to +150
BROADBAND
–0.5, +15
MRF9060MBR1
MRF9060MR1
Value
1.79
Max
0.56
223
175
65
PLASTIC
PLASTIC
Order this document
by MRF9060M/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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mrf9060mr1 Summary of contents

Page 1

... TO–270 DUAL LEAD PLASTIC MRF9060MR1 CASE 1337–01, STYLE 1 TO–272 DUAL LEAD PLASTIC MRF9060MBR1 Symbol Value Unit V 65 Vdc DSS V –0.5, +15 Vdc GS P 223 Watts D 1.79 W/°C °C T –65 to +150 stg °C T 175 J Symbol Max Unit °C/W R 0.56 θJC MRF9060MR1 MRF9060MBR1 1 ...

Page 2

... DS D DYNAMIC CHARACTERISTICS Input Capacitance = 26 Vdc ± 30 mV(rms) MHz Output Capacitance = 26 Vdc ± 30 mV(rms) MHz Reverse Transfer Capacitance = 26 Vdc ± 30 mV(rms) MHz MRF9060MR1 MRF9060MBR1 2 MRF9060MR1 MRF9060MBR1 MRF9060MR1 MRF9060MBR1 = 25°C unless otherwise noted) Symbol Min I — DSS I — DSS I — ...

Page 3

... C Symbol Min Typ η 37 IMD — –31.5 IRL — –14.5 G — ps η — IMD — –31 IRL — –12.5 Max Unit 18 — — % –28 dBc – — — % — dBc — dB MRF9060MR1 MRF9060MBR1 3 ...

Page 4

... B2 Long Ferrite Bead C1, C7, C13, C14 47 pF Chip Capacitors, B Case C2, C3, C11 0.8–8.0 Gigatrim Variable Capacitors C4 Chip Capacitors, B Case (MRF9060MR1 Chip Capacitors, B Case (MRF9060MBR1 Tantalum Chip Capacitors C6, C15, C16 C8 Chip Capacitors, B Case C10 3.9 pF Chip Capacitor, B Case C12 1 ...

Page 5

... Figure 2. 930–960 MHz Broadband Test Circuit Component Layout MOTOROLA RF DEVICE DATA MRF9060M MRF9060MB MRF9060MR1 MRF9060MBR1 5 ...

Page 6

... Figure 3. Class AB Broadband Circuit Performance Figure 4. Power Gain versus Output Power Figure 6. Intermodulation Distortion Products versus Output Power MRF9060MR1 MRF9060MBR1 6 η Figure 5. Intermodulation Distortion versus Output Power η Figure 7. Power Gain and Efficiency versus Output Power MOTOROLA RF DEVICE DATA ...

Page 7

... Figure 8. Power Gain, Efficiency, and IMD versus Output Power MOTOROLA RF DEVICE DATA η MRF9060MR1 MRF9060MBR1 7 ...

Page 8

... Z source Z load Figure 9. Series Equivalent Input and Output Impedance MRF9060MR1 MRF9060MBR1 8 Ω source load Ω Ω MHz 930 0.63 + j0.57 1.8 + j0.84 945 0.60 + j0.41 1.7 + j0.55 960 0.57 + j0.45 1.6 + j0.36 = Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground source load MOTOROLA RF DEVICE DATA ...

Page 9

... MOTOROLA RF DEVICE DATA NOTES MRF9060MR1 MRF9060MBR1 9 ...

Page 10

... PIN 3 BOTTOM VIEW DATUM c1 H PLANE NOTE 7 ZONE J MRF9060MR1 MRF9060MBR1 10 PACKAGE DIMENSIONS PIN ONE EXPOSED HEATSINK AREA PIN 1 ...

Page 11

... PACKAGE DIMENSIONS A E1 PIN ONE SEATING C Y PLANE CASE 1337–01 ISSUE O TO–272 DUAL LEAD PLASTIC MRF9060MBR1 PIN 3 1 PIN ONE ID VIEW Y–Y INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa MRF9060MR1 MRF9060MBR1 11 ...

Page 12

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T. Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF9060MR1 MRF9060MBR1 ◊ 12 MOTOROLA RF DEVICE DATA ...

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