mrf5s9100n Freescale Semiconductor, Inc, mrf5s9100n Datasheet - Page 5

• Manufacturer Part Number: mrf5s9100n
• Description: Rf Power Field Effect Transistors
• Manufacturer: Freescale Semiconductor, Inc

RF Device Data
Freescale Semiconductor
21
20
19
18
17
16
0.1
I
DQ
Figure 5. Two - Tone Power Gain versus
= 1425 mA
1150 mA
950 mA
700 mA
475 mA
P
out
1
V
Two −Tone Measurements
, OUTPUT POWER (WATTS) PEP
DD
= 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
Output Power
Figure 3. IS - 95 Broadband Performance @ P
22
20
18
16
14
12
10
22
20
18
16
14
12
10
Figure 4. IS - 95 Broadband Performance @ P
8
6
8
6
830
830
10
840
840
η
η
G
IRL
ACPR
ALT
G
IRL
ACPR
ALT
D
D
ps
ps
850
850
100
TYPICAL CHARACTERISTICS
V
N−CDMA IS−95 (Pilot, Sync, Paging, Traffic
Codes 8 through 13)
V
N−CDMA IS−95 (Pilot, Sync, Paging, Traffic
Codes 8 through 13)
DD
DD
860
860
f, FREQUENCY (MHz)
f, FREQUENCY (MHz)
= 26 Vdc, P
= 26 Vdc, P
870
870
1000
out
out
880
880
= 20 W (Avg.), I
= 2 W (Avg.), I
890
890
−20
−25
−30
−35
−40
−45
−50
−55
−60
−65
−70
DQ
900
900
0.1
DQ
Figure 6. Third Order Intermodulation Distortion
= 950 mA
= 950 mA
I
DQ
910
910
out
out
= 475 mA
= 20 Watts Avg.
= 2 Watts Avg.
920
920
P
out
50
40
30
20
10
8
6
4
−30
−40
−50
−60
−70
−40
−50
−60
−70
−80
1
V
Two −Tone Measurements
, OUTPUT POWER (WATTS) PEP
versus Output Power
DD
700 mA
= 26 Vdc, f1 = 880 MHz, f2 = 880.1 MHz
MRF5S9100NR1 MRF5S9100NBR1
−10
−15
−20
−25
−10
−15
−20
−25
−30
−30
950 mA
10
1150 mA
100
1425 mA
1000
5