mrf5s19090l Freescale Semiconductor, Inc, mrf5s19090l Datasheet

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mrf5s19090l

Manufacturer Part Number
mrf5s19090l
Description
1990 Avg., N Ccdma, Lateral N Cchannel Power Mosfet
Manufacturer
Freescale Semiconductor, Inc
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
1 . 9 t o 2 . 0 G H z . S u i t a b l e f o r T D M A , CDMA and multic arrier amplifier
applications.
• Typical 2–Carrier N–CDMA Performance for V
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz,
• Excellent Thermal Stability
• Characterized with Series Equivalent Large–Signal Impedance Parameters
• Qualified Up to a Maximum of 32 V
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
REV 0
Motorola, Inc. 2003
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for PCN and PCS base station applications with frequencies up to
I
IS–95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 –885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 –2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
90 Watts CW Output Power
DQ
Derate above 25°C
Case Temperature 80°C, 90 W CW
Case Temperature 80°C, 18 W CW
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 18 Watts Avg.
Power Gain — 14.5 dB
Efficiency — 25.8%
ACPR — –51 dB
IM3 — –37 dBc
= 850 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
C
= 25°C
Characteristic
Rating
DD
Operation
DD
= 28 Volts,
MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
stg
GS
D
J
CASE 465–06, STYLE 1
MRF5S19090LSR3
CASE 465A–06, STYLE 1
MRF5S19090LR3
MRF5S19090LSR3
MRF5S19090L
MRF5S19090L
LATERAL N–CHANNEL
1990 MHz, 18 W AVG.,
RF POWER MOSFETs
NI–780
NI–780S
2 x N–CDMA, 28 V
–65 to +200
–0.5, +15
Value
1.49
Max
0.67
0.75
261
200
65
Order this document
by MRF5S19090L/D
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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mrf5s19090l Summary of contents

Page 1

... NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. REV 0 MOTOROLA RF DEVICE DATA  Motorola, Inc. 2003 = 28 Volts, DD Operation MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 Order this document by MRF5S19090L/D MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 1990 MHz AVG N–CDMA LATERAL N–CHANNEL RF POWER MOSFETs CASE 465– ...

Page 2

... Input Return Loss ( Vdc Avg 850 mA 1930 MHz, DD out 1932.5 MHz and f1 = 1987.5 MHz, f2 =1990 MHz) (1) Part is internally matched both on input and output. MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 2 = 25°C unless otherwise noted) Symbol I DSS I DSS I GSS V ...

Page 3

... Value, P/N or DWG 95F786 100B220CP 500X 100B100CP 500X T494C105(1)050AS CDR33BX104AKWS 100B102JP 500X 100B4R3JP 500X T494D106(1)035AS T494X226(1)035AS 100B2.7BP 500X 44F3358 D5534M07B1K00R CR1206 564JT RM73B2B120JT MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 = 2.55 r Manufacturer Newark ATC ATC Kemet Kemet ATC ATC Kemet Kemet ATC Newark Newark ...

Page 4

... Figure 2. MRF5S19090 Test Circuit Component Layout MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 4 MRF5S19090 MOTOROLA RF DEVICE DATA ...

Page 5

... Figure 3. 2–Carrier N–CDMA Broadband Performance Figure 4. Two–Tone Power Gain versus Output Power Figure 6. Intermodulation Distortion Products versus Tone Spacing MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS Figure 5. Third Order Intermodulation Distortion Figure 7. Pulse CW Output Power versus MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 versus Output Power µ Input Power 5 ...

Page 6

... Figure 8. 2–Carrier N–CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power Figure 9. 2–Carrier N–CDMA Spectrum MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 6 TYPICAL CHARACTERISTICS η ± Figure 10. MTBF Factor versus Junction Temperature η ° MOTOROLA RF DEVICE DATA ...

Page 7

... Figure 11. Series Equivalent Input and Output Impedance MOTOROLA RF DEVICE DATA source load Ω Ω MHz 1930 2.98 – j5.12 2.07 – j1.31 1960 3.36 – j4.65 2.02 – j1.18 1990 4.06 – j4.64 1.93 – j1.01 = Test circuit impedance as measured from gate to ground. = Test circuit impedance as measured from drain to ground source load MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 Ω 7 ...

Page 8

... MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 8 NOTES MOTOROLA RF DEVICE DATA ...

Page 9

... MOTOROLA RF DEVICE DATA NOTES MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 9 ...

Page 10

... MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 10 NOTES MOTOROLA RF DEVICE DATA ...

Page 11

... PACKAGE DIMENSIONS Q R (LID) S (INSULATOR) SEATING CASE 465–06 T PLANE ISSUE F NI–780 MRF5S19090L Z R (LID) S (INSULATOR) CASE 465A–06 ISSUE F NI–780S MRF5S19090LSR3 MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa ...

Page 12

... USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1–800–521–6274 or 480–768–2130 ◊ MRF5S19090L MRF5S19090LR3 MRF5S19090LSR3 12 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu, Minato–ku, Tokyo 106–8573, Japan 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd. ...

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