mrf5s19130r3 Freescale Semiconductor, Inc, mrf5s19130r3 Datasheet

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mrf5s19130r3

Manufacturer Part Number
mrf5s19130r3
Description
Rf Power Field Effect Transistors N-channel Enhancement -mode Lateral Mosfets
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Part Number:
MRF5S19130R3
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
1.9 to 2.0 GHz. Suitable for TDMA, CDMA and multicarrier amplifier
applications.
• Typical 2 - Carrier N - CDMA Performance for V
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, f1 = 1960 MHz,
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Qualified Up to a Maximum of 32 V Operation
• Available in Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
REV 1
Motorola, Inc. 2003
MRF5S19130R3 and MRF5S19130SR3 replaced by MRF5S19130HR3 and
MRF5S19130HSR3. “H” suffix indicates lower thermal resistance package.
MOTOROLA RF DEVICE DATA
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
CW Operation
Thermal Resistance, Junction to Case
Designed for PCN and PCS base station applications at frequencies from
I
IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13)
1.2288 MHz Channel Bandwidth Carrier. Adjacent Channels Measured
over a 30 kHz Bandwidth at f1 - 885 kHz and f2 +885 kHz. Distortion
Products Measured over 1.2288 MHz Bandwidth at f1 - 2.5 MHz and
f2 +2.5 MHz. Peak/Avg. = 9.8 dB @ 0.01% Probability on CCDF.
110 Watts CW Output Power
DQ
Derate above 25°C
Case Temperature 80°C, 110 W CW
Case Temperature 80°C, 26 W CW
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 26 Watts Avg.
Power Gain — 13 dB
Efficiency — 25%
IM3 — - 37 dBc
ACPR — - 51 dB
= 1200 mA, f1 = 1958.75 MHz, f2 = 1961.25 MHz
C
= 25°C
Characteristic
Freescale Semiconductor, Inc.
For More Information On This Product,
Rating
For More Information On This Product,
Go to: www.freescale.com
Go to: www.freescale.com
DD
= 28 Volts,
Symbol
Symbol
V
R
V
T
CW
P
DSS
T
θJC
GS
stg
MRF5S19130SR3
CASE 465B - 03, STYLE 1
CASE 465C - 02, STYLE 1
D
J
MRF5S19130R3
MRF5S19130R3 MRF5S19130SR3
MRF5S19130SR3
MRF5S19130R3
LATERAL N - CHANNEL
1990 MHz, 26 W AVG.,
RF POWER MOSFETs
NI - 880S
NI - 880
2 x N - CDMA, 28 V
- 65 to +150
- 0.5, +15
Value
1.85
Max
0.54
0.60
324
200
110
65
Order this document
by MRF5S19130/D
Watts
Watts
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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mrf5s19130r3 Summary of contents

Page 1

... MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR TECHNICAL DATA MRF5S19130R3 and MRF5S19130SR3 replaced by MRF5S19130HR3 and MRF5S19130HSR3. “H” suffix indicates lower thermal resistance package. The RF MOSFET Line RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications at frequencies from 1 ...

Page 2

... Input Return Loss ( Vdc Avg 1200 mA 1930 MHz, DD out 1932.5 MHz and f1 = 1987.5 MHz 1990 MHz) (1) Part is internally matched both on input and output. MRF5S19130R3 MRF5S19130SR3 2 For More Information On This Product, = 25°C unless otherwise noted) C Symbol I DSS I DSS ...

Page 3

... Microstrip Z9 0.080″ x 0.955″ Microstrip Z10, Z11 1.280″ x 0.046″ Microstrip Z12 0.053″ x 1.080″ Microstrip Figure 1. MRF5S19130R3(SR3) Test Circuit Schematic Table 1. MRF5S19130R3(SR3) Test Circuit Component Designations and Values Part B1 C2 C8, C13 ...

Page 4

... Freescale Semiconductor, Inc. C10 C11 B2 R4 Figure 2. MRF5S19130R3(SR3) Test Circuit Component Layout MRF5S19130R3 MRF5S19130SR3 4 For More Information On This Product, MRF5S19130 Rev C16 C7 C6 C14 C12 C27 C13 C26 Go to: www.freescale.com C18 C19 C15 C20 C21 ...

Page 5

... P , OUTPUT POWER (WATTS) PEP out Distortion versus Output Power Ideal P3dB = 53.11 dBm (205.57 W) Actual Vdc 1200 Pulsed CW, 8 µsec (on), 1 msec (off) Center Frequency = 1960 MHz INPUT POWER (dBm) in Input Power MRF5S19130R3 MRF5S19130SR3 200 45 5 ...

Page 6

... Integrated BW −80 −90 −100 −7.5 −6 −4.5 −3 −1.5 0 1.5 f, FREQUENCY (MHz) Figure Carrier N - CDMA Spectrum MRF5S19130R3 MRF5S19130SR3 6 For More Information On This Product, TYPICAL CHARACTERISTICS IM3 = 28 Vdc 1200 OUTPUT POWER (WATTS) AVG. (N−CDMA) out Figure Carrier N - CDMA ACPR, IM3, ...

Page 7

... W (2−Carrier N−CDMA out source load MHz Ω Ω 1930 2.57 - j9.1 1.48 - j1.8 1960 2.35 - j7.6 1.28 - j1.5 1990 3.86 - j9.2 1.42 - j1.3 = Test circuit impedance as measured from source gate to ground. = Test circuit impedance as measured load from drain to ground. Output Device Matching Under Test Network Z Z source load Go to: www.freescale.com MRF5S19130R3 MRF5S19130SR3 7 ...

Page 8

... Freescale Semiconductor, Inc. MRF5S19130R3 MRF5S19130SR3 8 For More Information On This Product, NOTES Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 9

... Freescale Semiconductor, Inc. MOTOROLA RF DEVICE DATA For More Information On This Product, NOTES Go to: www.freescale.com MRF5S19130R3 MRF5S19130SR3 9 ...

Page 10

... Freescale Semiconductor, Inc. MRF5S19130R3 MRF5S19130SR3 10 For More Information On This Product, NOTES Go to: www.freescale.com MOTOROLA RF DEVICE DATA ...

Page 11

... D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF5S19130R3 MRF5S19130SR3 11 ...

Page 12

... E Motorola Inc. 2003 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 MRF5S19130R3 MRF5S19130SR3 12 For More Information On This Product, ◊ JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd. ...

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