mrf5s21150h Freescale Semiconductor, Inc, mrf5s21150h Datasheet

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mrf5s21150h

Manufacturer Part Number
mrf5s21150h
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - Carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 125 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Low Gold Plating Thickness on Leads, 40
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
CW Operation @ T
Thermal Resistance, Junction to Case
Designed for W- CDMA base station applications with frequencies from 2110
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Derate above 25°C
Derate above 25°C
Case Temperature 80°C, 100 W CW
Case Temperature 75°C, 33 W CW
out
Power Gain — 12.5 dB
Efficiency — 25%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39 dBc in 3.84 MHz Channel Bandwidth
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 33 Watts Avg., Full Frequency Band, Channel Bandwidth =
C
= 25°C
C
= 25°C
Characteristic
Rating
DD
Operation
μ
″ Nominal.
DD
= 28 Volts, I
DQ
= 1300 mA,
Symbol
Symbol
V
R
V
CW
T
P
T
DSS
T
θJC
GS
stg
D
C
J
CASE 465B - 03, STYLE 1
CASE 465C - 02, STYLE 1
MRF5S21150HR3 MRF5S21150HSR3
2110 - 2170 MHz, 33 W AVG., 28 V
MRF5S21150HSR3
MRF5S21150HR3
MRF5S21150HSR3
MRF5S21150HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 880S
NI - 880
- 65 to +150
Value
2 x W - CDMA
- 0.5, +65
- 0.5, +15
Value
0.84
0.46
0.47
380
150
200
150
2.2
(1,2)
MRF5S21150H
Rev. 1, 5/2006
W/°C
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
W
1

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mrf5s21150h Summary of contents

Page 1

... CASE 465B - 03, STYLE 880 MRF5S21150HR3 CASE 465C - 02, STYLE 880S MRF5S21150HSR3 Symbol Value Unit V - 0.5, +65 Vdc DSS V - 0.5, +15 Vdc GS P 380 W D 2.2 W/° +150 °C stg T 150 ° 200 ° 150 W 0.84 W/°C (1,2) Symbol Value Unit R °C/W θJC 0.46 0.47 MRF5S21150HR3 MRF5S21150HSR3 1 ...

Page 2

... MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF5S21150HR3 MRF5S21150HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...

Page 3

... Microstrip Z8 0.117″ x 1.024″ Microstrip Z9 0.117″ x 1.100″ Microstrip Figure 1. MRF5S21150HR3(HSR3) Test Circuit Schematic Table 5. MRF5S21150HR3(HSR3) Test Circuit Component Designations and Values Part C1 22 μ Tantalum Capacitor C2, C6, C8, C9, C13, C18, 6.8 pF 100B Chip Capacitors ...

Page 4

... Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product. Figure 2. MRF5S21150HR3(HSR3) Test Circuit Component Layout MRF5S21150HR3 MRF5S21150HSR3 4 ...

Page 5

... Two−Tone Measurement, 10 MHz Tone Spacing 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power Ideal P3dB = 53.41 dBm (219. Vdc 1300 Pulsed CW, 8 μsec(on), 1 msec(off 2140 MHz INPUT POWER (dBm) in Input Power MRF5S21150HR3 MRF5S21150HSR3 1000 Actual ...

Page 6

... Bandwidth @ ±5 MHz Offset. IM3 Measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 0.001 8 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 10. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 67% Clipping, Single - Carrier Test Signal MRF5S21150HR3 MRF5S21150HSR3 6 TYPICAL CHARACTERISTICS 9 −25 10 −30 IM3 8 −35 10 ACPR − ...

Page 7

... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load Output Matching Network MRF5S21150HR3 MRF5S21150HSR3 7 ...

Page 8

... MRF5S21150HR3 MRF5S21150HSR3 8 NOTES RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF5S21150HR3 MRF5S21150HSR3 9 ...

Page 10

... MRF5S21150HR3 MRF5S21150HSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... D 0.495 0.505 12.57 12.83 E 0.035 0.045 0.89 1.14 F 0.003 0.006 0.08 0.15 H 0.057 0.067 1.45 1.70 K 0.170 0.210 4.32 5.33 M 0.872 0.888 22.15 22.55 N 0.871 0.889 19.30 22.60 R 0.515 0.525 13.10 13.30 S 0.515 0.525 13.10 13.30 aaa 0.007 REF 0.178 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE F MRF5S21150HR3 MRF5S21150HSR3 11 ...

Page 12

... Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF5S21150HR3 MRF5S21150HSR3 MRF5S21150H Rev. 1, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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