mrf5s21045n Freescale Semiconductor, Inc, mrf5s21045n Datasheet

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mrf5s21045n

Manufacturer Part Number
mrf5s21045n
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - Carrier W - CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 45 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• 200°C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Freescale Semiconductor
Technical Data
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for W - CDMA base station applications with frequencies from 2110
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Derate above 25°C
Case Temperature 80°C, 45 W CW
Case Temperature 79°C, 10 W CW
out
Power Gain — 14.5 dB
Drain Efficiency — 25.5%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 39 dBc in 3.84 MHz Channel Bandwidth
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 10 Watts Avg., Full Frequency Band, Channel Bandwidth =
C
= 25°C
Characteristic
Rating
DD
Operation
DD
= 28 Volts, I
DQ
= 500 mA,
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
Document Number: MRF5S21045N
CASE 1486 - 03, STYLE 1
CASE 1484 - 04, STYLE 1
MRF5S21045NR1 MRF5S21045NBR1
2110 - 2170 MHz, 10 W AVG., 28 V
MRF5S21045NBR1
MRF5S21045NBR1
MRF5S21045NR1
MRF5S21045NR1
TO - 270 WB - 4
TO - 272 WB - 4
LATERAL N - CHANNEL
RF POWER MOSFETs
PLASTIC
PLASTIC
- 65 to +150
Value
2 x W - CDMA
- 0.5, +68
- 0.5, +15
Value
0.74
1.35
1.48
130
200
(1,2)
Rev. 3, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
W
1

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mrf5s21045n Summary of contents

Page 1

... Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts 500 mA Operation DD Document Number: MRF5S21045N Rev. 3, 5/2006 MRF5S21045NR1 MRF5S21045NBR1 2110 - 2170 MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 ...

Page 2

... MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF5S21045NR1 MRF5S21045NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol I ...

Page 3

... Microstrip Z5 0.480″ x 1.000″ Microstrip Z6 0.510″ x 0.080″ Microstrip Figure 1. MRF5S21045NR1(NBR1) Test Circuit Schematic Table 6. MRF5S21045NR1(NBR1) Test Circuit Component Designations and Values Part C1 220 nF Chip Capacitor (1812) C2, C3, C7, C12, C13 6.8 pF 100B Chip Capacitors C4, C5, C14, C15 6.8 μ ...

Page 4

... R1 C7 Figure 2. MRF5S21045NR1(NBR1) Test Circuit Component Layout MRF5S21045NR1 MRF5S21045NBR1 C13 C14 C15 C6 C10 C11 C12 MRF5S21045N Rev Device Data Freescale Semiconductor ...

Page 5

... Watts out −18 −8 −11 −22 −26 −14 −30 −17 −20 −34 2220 = 20 Watts out I = 200 mA DQ 800 mA 650 mA 500 mA 350 Vdc OUTPUT POWER (WATTS) PEP out versus Output Power MRF5S21045NR1 MRF5S21045NBR1 100 5 ...

Page 6

... P , OUTPUT POWER (WATTS) AVG. out Figure Carrier W - CDMA ACPR, IM3, Power Gain and Drain Efficiency versus Output Power MRF5S21045NR1 MRF5S21045NBR1 6 TYPICAL CHARACTERISTICS P1dB = 47.60 dBm (57 100 28 Figure 8. Pulse CW Output Power versus 17 −10 ...

Page 7

... W - CDMA TEST SIGNAL +20 +30 0 −10 −20 −30 −40 −50 −60 −IM3 in 3.84 MHz BW −70 − −25 −20 190 200 210 2 3.84 MHz Channel BW −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW +IM3 in 3.84 MHz BW −15 −10 − FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF5S21045NR1 MRF5S21045NBR1 ...

Page 8

... Z Z Figure 15. Series Equivalent Source and Load Impedance MRF5S21045NR1 MRF5S21045NBR1 Ω 2200 MHz f = 2000 MHz Z load f = 2000 MHz f = 2200 MHz Vdc 500 mA Avg out source load MHz Ω Ω 2000 8.15 - j5.91 4.78 - j5.19 2110 7.07 - j7.32 4.04 - j4.14 2140 6.28 - j7.71 3.81 - j3.69 2170 5.61 - j7.85 3.69 - j3.39 2200 4 ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF5S21045NR1 MRF5S21045NBR1 9 ...

Page 10

... MRF5S21045NR1 MRF5S21045NBR1 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... RF Device Data Freescale Semiconductor NOTES MRF5S21045NR1 MRF5S21045NBR1 11 ...

Page 12

... MRF5S21045NR1 MRF5S21045NBR1 12 PACKAGE DIMENSIONS DRAIN LEAD ...

Page 13

... RF Device Data Freescale Semiconductor MRF5S21045NR1 MRF5S21045NBR1 13 ...

Page 14

... MRF5S21045NR1 MRF5S21045NBR1 14 RF Device Data Freescale Semiconductor ...

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... RF Device Data Freescale Semiconductor MRF5S21045NR1 MRF5S21045NBR1 15 ...

Page 16

... For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF5S21045NR1 MRF5S21045NBR1 Document Number: MRF5S21045N Rev. 3, 5/2006 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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