mrf1015mb Freescale Semiconductor, Inc, mrf1015mb Datasheet

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mrf1015mb

Manufacturer Part Number
mrf1015mb
Description
Microwave Power Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Part Number
Manufacturer
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Part Number:
MRF1015MB
Manufacturer:
ASI
Quantity:
20 000
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
Microwave Pulse
Power Transistors
. . . designed for Class B and C common base amplifier applications in short
and long pulse TACAN, IFF, DME, and radar transmitters.
REV 6
NOTES:
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T C = 25 C (1)
Storage Temperature Range
Thermal Resistance, Junction to Case (2)
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Motorola, Inc. 1994
Guaranteed Performance @ 1090 MHz, 50 Vdc
100% Tested for Load Mismatch at All Phase Angles with 10:1 VSWR
Industry Standard Package
Nitride Passivated
Gold Metallized, Emitter Ballasted for Long Life and Resistance to Metal
Migration
Internal Input Matching for Broadband Operation
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
1. These devices are designed for RF operation. The total device dissipation rating applies only when the device is operated as RF amplifiers.
2. Thermal Resistance is determined under specified RF operating conditions by infrared measurement techniques.
Derate above 25 C
(I C = 10 mAdc, V BE = 0)
(I C = 10 mAdc, I E = 0)
(I E = 1.0 mAdc, I C = 0)
(V CB = 50 Vdc, I E = 0)
(I C = 250 mAdc, V CE = 5.0 Vdc)
Output Power = 15 Watts Peak
Minimum Gain = 10 dB
Characteristic
Rating
Characteristic
(T C = 25 C unless otherwise noted.)
Symbol
Symbol
V CBO
V EBO
V CES
R JC
T stg
P D
I C
– 65 to +150
Value
17.5
Max
100
4.0
1.0
60
60
10
V (BR)CBO
V (BR)CES
V (BR)EBO
Symbol
I CBO
h FE
mW/ C
Watts
Unit
Unit
Vdc
Vdc
Vdc
Adc
C/W
C
Min
4.0
60
60
10
MRF1015MB
MRF1015MA
15 W (PEAK), 960 – 1215 MHz
CASE 332A–03, STYLE 1
Typ
CASE 332–04, STYLE 1
40
MICROWAVE POWER
MRF1015MA MRF1015MB
TRANSISTORS
NPN SILICON
MRF1015MA
MRF1015MB
Max
100
1.0
Order this document
by MRF1015MA/D
(continued)
mAdc
Unit
Vdc
Vdc
Vdc
1

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mrf1015mb Summary of contents

Page 1

... MRF1015MB 15 W (PEAK), 960 – 1215 MHz MICROWAVE POWER TRANSISTORS NPN SILICON CASE 332–04, STYLE 1 MRF1015MA CASE 332A–03, STYLE 1 MRF1015MB Typ Max Unit — — Vdc — — Vdc — — Vdc — 1.0 mAdc 40 100 — (continued) MRF1015MA MRF1015MB 1 ...

Page 2

... Vdc, P out = 15 W Peak 1090 MHz) Collector Efficiency ( Vdc, P out = 15 W Peak 1090 MHz) Load Mismatch ( Vdc, P out = 15 W Peak 1090 MHz, VSWR = 10:1 All Phase Angles INPUT Z1 Z2 MRF1015MA MRF1015MB unless otherwise noted.) Symbol Min C ob — ...

Page 3

... MHz Ohms Ohms 960 5.9 + j13.6 12.5 – j15 1090 5.5 + j11.5 12.4 – j12.8 1215 4.0 + j12.5 12.1 – j10 Conjugate of the optimum load impedance into which the device output operates at a given output power, voltage, and frequency. MRF1015MA MRF1015MB 3 ...

Page 4

... EUROPE: Motorola Ltd.; European Literature Centre; 88 Tanners Drive, Blakelands, Milton Keynes, MK14 5BP, England. JAPAN: Nippon Motorola Ltd.; 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. MRF1015MA MRF1015MB 4 PACKAGE DIMENSIONS NOTES: 1 ...

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