mrf1511n Freescale Semiconductor, Inc, mrf1511n Datasheet

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mrf1511n

Manufacturer Part Number
mrf1511n
Description
N - Channel Enhancement - Mode Lateral Mosfet
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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mrf1511nT1
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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
cies to 175 MHz. The high gain and broadband performance of this device
makes it ideal for large- signal, common source amplifier applications in 7.5 volt
portable FM equipment.
• Specified Performance @ 175 MHz, 7.5 Volts
• Capable of Handling 20:1 VSWR, @ 9.5 Vdc,
Features
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal
• Broadband UHF/VHF Demonstration Amplifier Information
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• Available in Tape and Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Table 3. Moisture Sensitivity Level
1. Calculated based on the formula P
2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
Drain - Source Voltage
Gate - Source Voltage
Drain Current — Continuous
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Designed for broadband commercial and industrial applications at frequen-
175 MHz, 2 dB Overdrive
Impedance Parameters
Available Upon Request
T1 Suffix = 1,000 Units per 12 mm, 7 Inch Reel.
Derate above 25°C
the MTTF calculators by product.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Output Power — 8 Watts
Power Gain — 11.5 dB
Efficiency — 55%
Test Methodology
C
= 25°C
Characteristic
Rating
D
(1)
=
T J – T C
R θJC
G
Rating
1
D
S
Symbol
Symbol
V
R
V
T
Package Peak Temperature
P
T
DSS
I
θJC
GS
stg
D
D
J
Document Number: MRF1511N
LATERAL N - CHANNEL
260
MRF1511NT1
RF POWER MOSFET
CASE 466 - 03, STYLE 1
175 MHz, 8 W, 7.5 V
- 65 to +150
BROADBAND
- 0.5, +40
Value
Value
62.5
± 20
150
PLASTIC
0.5
PLD - 1.5
4
2
(2)
Rev. 5, 5/2006
MRF1511NT1
W/°C
°C/W
Unit
Unit
Unit
Vdc
Vdc
Adc
°C
°C
°C
W
1

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mrf1511n Summary of contents

Page 1

... MOS devices should be observed. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor Rating – θJC Document Number: MRF1511N Rev. 5, 5/2006 MRF1511NT1 175 MHz 7.5 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 466 - 03, STYLE 1 PLD - 1.5 PLASTIC Symbol ...

Page 2

... GS Functional Tests (In Freescale Test Fixture) Common - Source Amplifier Power Gain (V = 7.5 Vdc Watts 150 mA 175 MHz) DD out DQ Drain Efficiency (V = 7.5 Vdc Watts 150 mA 175 MHz) DD out DQ MRF1511NT1 2 = 25°C unless otherwise noted) C Symbol I DSS I GSS V GS(th) V DS(on) C iss C oss C rss ...

Page 3

... Microstrip 1.057″ x 0.080″ Microstrip 0.120″ x 0.080″ Microstrip ® Glass Teflon , 31 mils, 2 oz. Copper 135 MHz 175 MHz 155 MHz OUTPUT POWER (WATTS) out Figure 3. Input Return Loss versus Output Power MRF1511NT1 RF OUTPUT 10 3 ...

Page 4

... BIASING CURRENT (mA) DQ Figure 6. Output Power versus Biasing Current 14 12 175 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 8. Output Power versus Supply Voltage MRF1511NT1 7 Figure 5. Drain Efficiency versus Output Power ...

Page 5

... Microstrip 0.872″ x 0.080″ Microstrip 0.206″ x 0.080″ Microstrip ® Glass Teflon , 31 mils, 2 oz. Copper MHz 66 MHz 77 MHz OUTPUT POWER (WATTS) out Figure 12. Input Return Loss versus Output Power MRF1511NT1 RF OUTPUT ...

Page 6

... DQ Figure 15. Output Power versus Biasing Current MHz 8 66 MHz 88 MHz SUPPLY VOLTAGE (VOLTS) DD Figure 17. Output Power versus Supply Voltage MRF1511NT1 MHz 7 Figure 14. Drain Efficiency versus 80 70 ...

Page 7

... JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide 2 MTTF factor by I for MTTF in a particular application. D 190 200 210 2 MRF1511NT1 7 ...

Page 8

... Figure 1 Complex conjugate of the load OL impedance at given output power, voltage, frequency, and η Note was chosen based on tradeoffs between gain, drain efficiency, and device stability. OL Figure 20. Series Equivalent Input and Output Impedance MRF1511NT1 175 MHz Ω 155 o 77 ...

Page 9

... S 22 ∠ φ ∠ φ 0.85 - 170 8 0.84 - 174 - 2 0.85 - 176 - 8 0.84 - 177 - 18 0.85 - 177 - 11 0.85 - 176 - 15 0.86 - 176 - 7 0.87 - 176 - 3 0.87 - 176 - 18 0.87 - 175 - 10 0.88 - 175 S 22 ∠ φ ∠ φ 0.86 - 172 3 0.86 - 175 - 19 0.86 - 177 - 6 0.86 - 177 - 4 0.86 - 177 - 14 0.86 - 177 - 2 0.87 - 177 - 9 0.87 - 176 - 3 0.88 - 176 - 8 0.88 - 176 - 15 0.88 - 176 MRF1511NT1 9 ...

Page 10

... One critical figure of merit for a FET is its static resistance in the full - on condition. This on - resistance the linear region of the output characteristic and is speci- fied at a specific gate - source voltage and drain current. The MRF1511NT1 10 APPLICATIONS INFORMATION drain - source voltage under these conditions is termed V ...

Page 11

... Two - port stability analysis with this device’ parameters provides a useful tool for selection of loading or feedback circuitry to assure stable operation. See Free- scale Application Note AN215A, “RF Small - Signal Design Using Two - Port Parameters” for a discussion of two port network theory and stability. MRF1511NT1 11 ...

Page 12

... MRF1511NT1 12 NOTES RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor NOTES MRF1511NT1 13 ...

Page 14

... MRF1511NT1 14 NOTES RF Device Data Freescale Semiconductor ...

Page 15

... E 0.021 0.026 0.53 F 0.026 0.044 0.66 G 0.050 0.070 1.27 H 0.045 0.063 1.14 J 0.160 0.180 4.06 K 0.273 0.285 6.93 L 0.245 0.255 6.22 N 0.230 0.240 5.84 P 0.000 0.008 0.00 Q 0.055 0.063 1.40 R 0.200 0.210 5.08 S 0.006 0.012 0.15 U 0.006 0.012 0.15 ZONE V 0.000 0.021 0.00 ZONE W 0.000 0.010 0.00 ZONE X 0.000 0.010 0.00 MRF1511NT1 0.115 2.92 inches mm MAX 6.73 5.97 1.83 3.81 0.66 1.12 1.78 1.60 4.57 7.24 6.48 6.10 0.20 1.60 5.33 0.31 0.31 0.53 0.25 0.25 15 ...

Page 16

... For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF1511NT1 Document Number: MRF1511N Rev. 5, 5/2006 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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