mrf18090bs Freescale Semiconductor, Inc, mrf18090bs Datasheet

no-image

mrf18090bs

Manufacturer Part Number
mrf18090bs
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors
N–Channel Enhancement–Mode Lateral MOSFETs
1.9 to 2.0 GHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier
applications. To be used in class AB for GSM and EDGE cellular radio
applications.
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ESD PROTECTION CHARACTERISTICS
REV 3
Motorola, Inc. 2002
MOTOROLA RF DEVICE DATA
Drain–Source Voltage
Gate–Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Human Body Model
Machine Model
Thermal Resistance, Junction to Case
Designed for GSM and EDGE base station applications with frequencies from
GSM and EDGE Performances, Full Frequency Band
Internally Matched, Controlled Q, for Ease of Use
High Gain, High Efficiency and High Linearity
Integrated ESD Protection
Designed for Maximum Gain and Insertion Phase Flatness
Capable of Handling 10:1 VSWR, @ 26 Vdc, 90 Watts (CW) Output Power
Excellent Thermal Stability
Characterized with Series Equivalent Large–Signal Impedance Parameters
Derate above 25 C
NOTE – CAUTION – MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
Power Gain — 13.5 dB (Typ) @ 90 Watts (CW)
Efficiency — 45% (Typ) @ 90 Watts (CW)
C
= 25 C
Test Conditions
Characteristic
Rating
Symbol
Symbol
V
R
V
T
P
DSS
T
stg
GS
D
J
JC
MRF18090BS
1.90 – 1.99 GHz, 90 W, 26 V
MRF18090B
LATERAL N–CHANNEL
CASE 465B–03, STYLE 1
CASE 465C–02, STYLE 1
RF POWER MOSFETS
M3 (Minimum)
2 (Minimum)
MRF18090B MRF18090BS
–65 to +200
(MRF18090BS)
+15, –0.5
(MRF18090B)
Value
Class
(NI–880S)
1.43
Max
(NI–880)
250
200
0.7
65
Order this document
by MRF18090B/D
Watts
W/ C
Unit
Unit
Vdc
Vdc
C/W
C
C
1

Related parts for mrf18090bs

mrf18090bs Summary of contents

Page 1

... CASE 465B–03, STYLE 1 (NI–880) (MRF18090B) CASE 465C–02, STYLE 1 (NI–880S) (MRF18090BS) Symbol Value Unit V 65 Vdc DSS V +15, –0.5 Vdc GS P 250 Watts D 1. –65 to +200 C stg T 200 C J Class 2 (Minimum) M3 (Minimum) Symbol Max Unit R 0.7 C/W JC MRF18090B MRF18090BS 1 ...

Page 2

... Vdc CW 750 mA VSWR = 10:1, DD out DQ All Phase Angles at Frequency of Tests) (1) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1900 band, ensuring batch–to–batch consistency. MRF18090B MRF18090BS unless otherwise noted) Symbol V (BR)DSS I DSS I ...

Page 3

... Figure 1. 1.93 – 1.99 MHz Test Fixture Schematic MRF18090B Figure 2. 1.93 – 1.99 GHz Test Fixture Component Layout MOTOROLA RF DEVICE DATA Z2 Printed Inductance Z3 Printed Inductance (Butterfly) Z4 0.70 x 0.09 Microstrip Z5 0.36 x 0.09 Microstrip Z6 0.21 x 1.25 Microstrip Z7 0.45 x 1.18 Microstrip Z8 1.37 x 0.05 Microstrip Z9 0.39 x 0.09 Microstrip Z10 1.25 x 0.09 Microstrip PCB Teflon Glass MRF18090B MRF18090BS 3 ...

Page 4

... Figure 3. 1.93 – 1.99 GHz Demo Board Schematic Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Ï Figure 4. 1.93 – 1.99 GHz Demo Board Component Layout MRF18090B MRF18090BS Substrate = 0.5 mm Teflon Glass Ï ...

Page 5

... Figure 5. Power Gain versus Output Power Figure 7. Output Power versus Frequency MOTOROLA RF DEVICE DATA TYPICAL CHARACTERISTICS Figure 6. Output Power versus Supply Voltage Figure 8. Output Power and Efficiency versus Input Power Figure 9. Wideband Gain and IRL (at Small Signal) h MRF18090B MRF18090BS 5 ...

Page 6

... Complex conjugate of the optimum load Note: Z Figure 10. Large Signal Input and Output Impedance MRF18090B MRF18090BS 6 Ω Ω Ω MHz 1805 1.10 + j5.85 1.15 + j2.16 1880 1.56 + j6.75 1.13 + j2.60 1930 2.05 + j8.00 1.30 + j2.23 1990 2.30 + j7.30 0.82 + j2.90 = Complex conjugate of the source impedance. given voltage, P1dB, gain, efficiency, bias current and frequency. ...

Page 7

... CASE 465C–02 SEATING ISSUE A PLANE (NI–880S) (MRF18090BS) INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc INCHES MILLIMETERS DIM MIN MAX MIN MAX aaa bbb ccc MRF18090B MRF18090BS 7 ...

Page 8

... JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3–20–1, Minami–Azabu. Minato–ku, Tokyo 106–8573 Japan. 81–3–3440–3569 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 852–26668334 Technical Information Center: 1–800–521–6274 HOME PAGE: http://www.motorola.com/semiconductors/ MRF18090B MRF18090BS 8 MOTOROLA RF DEVICE DATA MRF18090B/D ...

Related keywords