mrf652s Freescale Semiconductor, Inc, mrf652s Datasheet

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mrf652s

Manufacturer Part Number
mrf652s
Description
Rf Power Transistors Npn Silicon
Manufacturer
Freescale Semiconductor, Inc
Datasheet
MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
The RF Line
NPN Silicon
RF Power Transistors
and commercial FM equipment operating to 512 MHz.
REV 7
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
MOTOROLA RF DEVICE DATA
Collector–Emitter Voltage
Collector–Base Voltage
Emitter–Base Voltage
Collector Current — Continuous
Total Device Dissipation @ T C = 25 C
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Collector–Emitter Breakdown Voltage
Collector–Emitter Breakdown Voltage
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial
Motorola, Inc. 1995
Guaranteed 12.5 Volt, 512 MHz Characteristics
Typical Performance at 512 MHz, 12.5 V, 5.0 W Output = 6.0 dB
Series Equivalent Large–Signal Characterization
Gold Metallized, Emitter Ballasted for Long Life and Reliability
Capable of 30:1 VSWR Load Mismatch at 15.5 V Supply Voltage
Circuit board photomaster available upon request by contacting
RF Tactical Marketing in Phoenix, AZ.
Derate above 25 C
(I C = 25 mAdc, I B = 0)
(I C = 25 mAdc, V BE = 0)
(I C = 25 mAdc, I E = 0)
(I E = 5.0 mAdc, I C = 0)
(V CE = 15 Vdc, V BE = 0)
(I C = 200 mAdc, V CE = 5.0 Vdc)
Output Power = 5.0 Watts
Minimum Gain = 10 dB
Efficiency = 65% (Typ)
Characteristic
Rating
Characteristic
(T C = 25 C unless otherwise noted)
Symbol
Symbol
V CEO
V CBO
V EBO
R JC
T stg
P D
T J
I C
– 65 to +150
Value
Max
143
200
4.0
2.0
7.0
16
36
25
V (BR)CEO
V (BR)CBO
V (BR)CES
V (BR)EBO
Symbol
I CES
h FE
mW/ C
Watts
Unit
Unit
Vdc
Vdc
Vdc
Adc
C/W
C
C
Min
4.0
16
36
36
10
Typ
MRF652S
CASE 244–04, STYLE 1
CASE 249–06, STYLE 1
MRF652
TRANSISTORS
5.0 W, 512 MHz
NPN SILICON
RF POWER
MRF652S
MRF652
Max
150
MRF652 MRF652S
1.0
Order this document
by MRF652/D
(continued)
mAdc
Unit
Vdc
Vdc
Vdc
Vdc
1

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mrf652s Summary of contents

Page 1

... MRF652 MRF652S 5.0 W, 512 MHz RF POWER TRANSISTORS NPN SILICON CASE 244–04, STYLE 1 MRF652 CASE 249–06, STYLE 1 MRF652S Typ Max Unit — — Vdc — — Vdc — — Vdc — — Vdc — 1.0 mAdc — 150 — (continued) MRF652 MRF652S 1 ...

Page 2

... C2 — 1.0 – 6.0 pF Johanson Variable 5201 C3 — Unelco Mica C4 — Mini–Underwood Mica C5 — Mini–Underwood Mica C6 — 1000 pF Unelco Mica C7 — 0.1 F Ceramic Figure 1. 440 – 512 MHz Broadband Test Circuit MRF652 MRF652S unless otherwise noted) Symbol Min C ob — ...

Page 3

... given output power, voltage and frequency 0.5 W 0.25 W 480 500 520 f, FREQUENCY (MHz) P out 2:0 40 1:5 VSWR 1:1 480 500 520 f, FREQUENCY (MHz 12.5 Vdc P out = 5 Ohms Ohms 1.18 + j0.54 6.7 – j6.9 1.19 + j0.88 7.05 – j6.1 1.19 + j1.11 7.6 – j5.1 1.19 + j1.35 8.1 – j4.1 MRF652 MRF652S 3 ...

Page 4

... Motorola, Inc. Motorola, Inc Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 MFAX: RMFAX0@email.sps.mot.com – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com MRF652 MRF652S 4 PACKAGE DIMENSIONS ...

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