mrf6v2010n Freescale Semiconductor, Inc, mrf6v2010n Datasheet

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mrf6v2010n

Manufacturer Part Number
mrf6v2010n
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2007-2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies up to 450 MHz. Devices are unmatched and are suitable for use in
industrial, medical and scientific applications.
• Typical CW Performance at 220 MHz: V
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 220 MHz, 10 Watts CW
Features
• Integrated ESD Protection
• Excellent Thermal Stability
• Facilitates Manual Gain Control, ALC and Modulation Techniques
• 200°C Capable Plastic Package
• RoHS Compliant
• TO - 270 - 2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
• TO - 272 - 2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed primarily for CW large - signal output and driver applications with
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
Output Power
13 inch Reel.
13 inch Reel.
Case Temperature 81°C, 10 W CW
out
Power Gain — 23.9 dB
Drain Efficiency — 62%
MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 10 Watts
Characteristic
Rating
DD
= 50 Volts, I
DQ
= 30 mA,
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
C
J
CASE 1265 - 09, STYLE 1
Document Number: MRF6V2010N
MRF6V2010NBR1
MRF6V2010NR1 MRF6V2010NBR1
MRF6V2010NR1
MRF6V2010NR1
10 - 450 MHz, 10 W, 50 V
LATERAL N - CHANNEL
TO - 270 - 2
RF POWER MOSFETs
PLASTIC
CASE 1337 - 04, STYLE 1
BROADBAND
- 65 to +150
- 0.5, +110
Value
- 0.5, +10
MRF6V2010NBR1
Value
150
200
3.0
TO - 272 - 2
PLASTIC
(1,2)
Rev. 3, 2/2008
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
1

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mrf6v2010n Summary of contents

Page 1

... Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2007-2008. All rights reserved. RF Device Data Freescale Semiconductor = 50 Volts mA Document Number: MRF6V2010N Rev. 3, 2/2008 MRF6V2010NR1 MRF6V2010NBR1 10 - 450 MHz LATERAL N - CHANNEL BROADBAND RF POWER MOSFETs CASE 1265 - 09, STYLE 1 ...

Page 2

... Drain Efficiency Input Return Loss ATTENTION: The MRF6V2010N and MRF6V2010NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices ...

Page 3

... Microstrip Z5 0.293″ x 0.270″ Microstrip Z6 0.120″ x 0.270″ Microstrip Figure 1. MRF6V2010NR1(NBR1) Test Circuit Schematic Table 6. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values Part B1 Ω, 100 MHz Long Ferrite Beads C1, C8, C11, C18 1000 pF Chip Capacitors C2 10 μ ...

Page 4

... MRF6V2010N/NB Rev. 3 Figure 2. MRF6V2010NR1(NBR1) Test Circuit Component Layout MRF6V2010NR1 MRF6V2010NBR1 C12 R1 C11 C8 L1 C10 C9 C14 B2 C13 C15 L2 C16 C17 C18 L3 RF Device Data Freescale Semiconductor ...

Page 5

... DRAIN−SOURCE VOLTAGE (VOLTS) DS Figure 4. DC Safe Operating Area = Vdc 220 MHz OUTPUT POWER (WATTS) CW out P3dB = 40.87 dBm (12 Vdc 220 MHz INPUT POWER (dBm) in MRF6V2010NR1 MRF6V2010NBR1 100 200 10 20 Ideal Actual 23 5 ...

Page 6

... 450 MHz OUTPUT POWER (WATTS) CW out Figure 12. Power Gain and Drain Efficiency versus CW Output Power MRF6V2010NR1 MRF6V2010NBR1 6 TYPICAL CHARACTERISTICS 220 MHz Figure 10. Power Output versus Power Input − ...

Page 7

... MHz W 220 20 + j25 75 + j44 Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load = 50 Ω 220 MHz Z load Z load W Output Matching Network MRF6V2010NR1 MRF6V2010NBR1 7 ...

Page 8

... C10 Figure 15. MRF6V2010NR1(NBR1) Test Circuit Component Layout — 130 MHz Table 7. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values — 130 MHz Part B1 Ω, 100 MHz Long Ferrite Beads, Surface Mount C1, C5, C18, C19 1000 pF Chip Capacitors C2, C12 ...

Page 9

... B1 C20 Figure 16. MRF6V2010NR1(NBR1) Test Circuit Component Layout — 450 MHz Table 8. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values — 450 MHz Part B1 Ω, 100 MHz Long Ferrite Beads, Surface Mount C1, C5, C12, C15 240 pF Chip Capacitors C2 Chip Capacitors C4, C11 2.2 μ ...

Page 10

... C11 C10 Figure 17. MRF6V2010NR1(NBR1) Test Circuit Component Layout — 64 MHz Table 9. MRF6V2010NR1(NBR1) Test Circuit Component Designations and Values — 64 MHz Part B1 Ω, 100 MHz Long Ferrite Beads, Surface Mount C1, C5, C15, C17 1000 pF Chip Capacitors Chip Capacitor ...

Page 11

... Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load f = 450 MHz Z load f = 220 MHz Z load f = 130 MHz Z load MHz Z source Z load W Output Matching Network MRF6V2010NR1 MRF6V2010NBR1 11 ...

Page 12

... MRF6V2010NR1 MRF6V2010NBR1 12 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 13

... RF Device Data Freescale Semiconductor MRF6V2010NR1 MRF6V2010NBR1 13 ...

Page 14

... MRF6V2010NR1 MRF6V2010NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF6V2010NR1 MRF6V2010NBR1 15 ...

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... MRF6V2010NR1 MRF6V2010NBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... RF Device Data Freescale Semiconductor MRF6V2010NR1 MRF6V2010NBR1 17 ...

Page 18

... Added Case Operating Temperature limit to the Maximum Ratings table and set limit to 150° • Corrected C Dynamic Characteristics table • Replaced Case Outline 1337 - 04, Issue D, with 1337 - 04, Issue 17. Corrected document number 98ASA99191D on Sheet 3. MRF6V2010NR1 MRF6V2010NBR1 18 PRODUCT DOCUMENTATION REVISION HISTORY Description and Z values, Fig ...

Page 19

... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF6V2010N Rev. 3, 2/2008 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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