mrf6v2300n Freescale Semiconductor, Inc, mrf6v2300n Datasheet
mrf6v2300n
Available stocks
Related parts for mrf6v2300n
mrf6v2300n Summary of contents
Page 1
... Operating Junction Temperature © Freescale Semiconductor, Inc., 2007 - 2008. All rights reserved. RF Device Data Freescale Semiconductor = 900 mA, DQ Symbol Document Number: MRF6V2300N Rev. 3, 1/2008 MRF6V2300NR1 MRF6V2300NBR1 10 - 600 MHz, 300 LATERAL N - CHANNEL SINGLE - ENDED BROADBAND RF POWER MOSFETs CASE 1486 - 03, STYLE 1 ...
Page 2
... Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. ATTENTION: The MRF6V2300N and MRF6V2300NB are high power devices and special considerations must be followed in board design and mounting. Incorrect mounting can lead to internal temperatures which exceed the maximum allowable operating junction temperature. Refer to Freescale Application Note AN3263 (for bolt down mounting) or AN1907 (for solder reflow mounting) PRIOR TO STARTING SYSTEM DESIGN to ensure proper mounting of these devices ...
Page 3
... Z5 0.434″ x 0.220″ Microstrip Z6, Z7 0.298″ x 0.630″ Microstrip Figure 2. MRF6V2300NR1(NBR1) Test Circuit Schematic Table 6. MRF6V2300NR1(NBR1) Test Circuit Component Designations and Values Part B1 Ω, 100 MHz Long Ferrite Beads, Surface Mount B3 47 Ω, 100 MHz Short Ferrite Bead, Surface Mount C1 47 μ ...
Page 4
... C10 C11 C12 C13 * Stacked Figure 3. MRF6V2300NR1(NBR1) Test Circuit Component Layout MRF6V2300NR1 MRF6V2300NBR1 4 C4 C19 C5 C18 C6 C17 R1 B2 C15* C8 C16 C20 L2 C14 L1 C23 C22 C21 MRF6V2300N/NB Rev Device Data Freescale Semiconductor ...
Page 5
... Figure 5. DC Safe Operating Area I = 1350 Vdc 220 MHz 100 P , OUTPUT POWER (WATTS) CW out P3dB = 55.76 dBm (377 W) P1dB = 55.04 dBm (319 Vdc 900 220 MHz INPUT POWER (dBm) in MRF6V2300NR1 MRF6V2300NBR1 100 600 Ideal Actual 34 5 ...
Page 6
... Figure 13. VHF Broadcast Broadband Performance MRF6V2300NR1 MRF6V2300NBR1 6 TYPICAL CHARACTERISTICS 900 220 MHz 35 300 350 400 10 Figure 11. Power Output versus Power Input 25_C 85_C ...
Page 7
... JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours when the device = 300 W CW, and η is operated Vdc out MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 230 250 = 68%. D MRF6V2300NR1 MRF6V2300NBR1 7 ...
Page 8
... Figure 15. Series Equivalent Source and Load Impedance MRF6V2300NR1 MRF6V2300NBR1 8 Z source f = 220 MHz = 5 Ω load f = 220 MHz Vdc 900 mA 300 out f Z source MHz W 220 1.23 + j3.69 2.43 + j2. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground ...
Page 9
... RF Device Data Freescale Semiconductor PACKAGE DIMENSIONS MRF6V2300NR1 MRF6V2300NBR1 9 ...
Page 10
... MRF6V2300NR1 MRF6V2300NBR1 10 RF Device Data Freescale Semiconductor ...
Page 11
... RF Device Data Freescale Semiconductor MRF6V2300NR1 MRF6V2300NBR1 11 ...
Page 12
... MRF6V2300NR1 MRF6V2300NBR1 12 RF Device Data Freescale Semiconductor ...
Page 13
... RF Device Data Freescale Semiconductor MRF6V2300NR1 MRF6V2300NBR1 13 ...
Page 14
... MRF6V2300NR1 MRF6V2300NBR1 14 RF Device Data Freescale Semiconductor ...
Page 15
... Replaced Case Outline 1484 - 04, Issue D, with 1484 - 04, Issue 14. Added pin numbers 1 through 4 on Sheet 1, replacing Gate and Drain notations with Pin 1 and Pin 2 designations. RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description test condition to indicate AC stimulus on the V iss connection versus the V connection MRF6V2300NR1 MRF6V2300NBR1 15 ...
Page 16
... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6V2300NR1 MRF6V2300NBR1 Document Number: MRF6V2300N Rev. 3, 1/2008 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...