mrf6vp11kh Freescale Semiconductor, Inc, mrf6vp11kh Datasheet

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mrf6vp11kh

Manufacturer Part Number
mrf6vp11kh
Description
Rf Power Field Effect Transistor
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2008. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
150 MHz. Device is unmatched and is suitable for use in industrial, medical
and scientific applications.
• Typical Pulsed Performance at 130 MHz: V
• Capable of Handling 10:1 VSWR, @ 50 Vdc, 130 MHz, 1000 Watts Peak
Features
• Qualified Up to a Maximum of 50 V
• Integrated ESD Protection
• Excellent Thermal Stability
• Designed for Push - Pull Operation
• Greater Negative Gate - Source Voltage Range for Improved Class C
• RoHS Compliant
• In Tape and Reel. R6 Suffix = 150 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed primarily for pulsed wideband applications with frequencies up to
1. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
P
Power
Operation
Case Temperature 80°C, 1000 W Pulsed, 100 μsec Pulse Width, 20% Duty Cycle
out
Power Gain — 26 dB
Drain Efficiency — 71%
calculators by product.
Select Documentation/Application Notes - AN1955.
= 1000 Watts Peak, Pulse Width = 100 μsec, Duty Cycle = 20%
Characteristic
Rating
DD
Operation
DD
= 50 Volts, I
DQ
= 150 mA,
Symbol
Symbol
V
R
V
T
T
DSS
T
θJC
GS
stg
RF
RF
C
J
Document Number: MRF6VP11KH
inA
inB
/V
/V
MRF6VP11KHR6
10 - 150 MHz, 1000 W, 50 V
GSA
GSB
Figure 1. Pin Connections
LATERAL N - CHANNEL
CASE 375D - 05, STYLE 1
RF POWER MOSFET
PART IS PUSH - PULL
3
4
BROADBAND
- 65 to +150
- 0.5, +110
Value
- 6.0, +10
Value
0.03
(Top View)
150
200
NI - 1230
(1,2)
MRF6VP11KHR6
Rev. 0, 1/2008
1
2 RF
RF
°C/W
outA
outB
Unit
Unit
Vdc
Vdc
°C
°C
°C
/V
/V
DSA
DSB
1

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mrf6vp11kh Summary of contents

Page 1

... Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor = 50 Volts 150 mA Operation DD Document Number: MRF6VP11KH Rev. 0, 1/2008 MRF6VP11KHR6 10 - 150 MHz, 1000 LATERAL N - CHANNEL BROADBAND RF POWER MOSFET CASE 375D - 05, STYLE 1230 PART IS PUSH - PULL ...

Page 2

... Functional Tests (In Freescale Test Fixture, 50 ohm system) V 100 μsec Pulse Width, 20% Duty Cycle Power Gain Drain Efficiency Input Return Loss 1. Each side of device measured separately. 2. Measurement made with device in push - pull configuration. MRF6VP11KHR6 2 = 25°C unless otherwise noted) C Symbol I GSS V (BR)DSS ...

Page 3

... Microstrip Z10, Z11 0.102″ x 0.253″ Microstrip Z12, Z13 0.206″ x 0.253″ Microstrip Figure 2. MRF6VP11KHR6 Test Circuit Schematic Table 5. MRF6VP11KHR6 Test Circuit Component Designations and Values Part B1 95 Ω, 100 MHz Long Ferrite Bead C1 47 μ Electrolytic Capacitor C2 22 μ ...

Page 4

... C10 C11 J1 L2 C12 * L3 is wrapped around R2. Figure 3. MRF6VP11KHR6 Test Circuit Component Layout MRF6VP11KHR6 4 C21 T1 C24 C23 C22 C19 C17 C18 C16 C15 C20 C14 L3, R2* C13 T2 J2 C25 C26 MRF6VP11KH Rev Device Data ...

Page 5

... 150 mA 130 MHz DQ Pulse Width = 100 μsec Duty Cycle = 20% 200 400 600 800 1000 1200 P , OUTPUT POWER (WATTS) PULSED out Figure 9. Pulsed Power Gain versus Output Power MRF6VP11KHR6 = 175°C J 100 200 Actual 38 39 1400 1600 5 ...

Page 6

... This above graph displays calculated MTTF in hours when the device is operated at V Duty Cycle = 20%, and η MTTF calculator available at http:/www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. Figure 12. MTTF versus Junction Temperature MRF6VP11KHR6 6 TYPICAL CHARACTERISTICS Vdc ...

Page 7

... Vdc 150 mA 1000 W Peak DD DQ out f Z source MHz W 130 1.58 + j6.47 4.6 + j1. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Input Device Under Matching Network Test Z Z source load Z load W Output Matching Network MRF6VP11KHR6 7 ...

Page 8

... MRF6VP11KHR6 8 PACKAGE DIMENSIONS RF Device Data Freescale Semiconductor ...

Page 9

... RF Device Data Freescale Semiconductor MRF6VP11KHR6 9 ...

Page 10

... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Jan. 2008 • Initial Release of Data Sheet MRF6VP11KHR6 10 PRODUCT DOCUMENTATION REVISION HISTORY Description RF Device Data Freescale Semiconductor ...

Page 11

... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com RF Device Data Document Number: MRF6VP11KH Rev. 0, 1/2008 Freescale Semiconductor Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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