mrf6s18060 Freescale Semiconductor, Inc, mrf6s18060 Datasheet

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mrf6s18060

Manufacturer Part Number
mrf6s18060
Description
Rf Power Field Effect Transistors N-channel Enhancement-mode Lateral Mosfets
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Part Number:
mrf6s18060NR1
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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
frequencies from 1800 to 2000 MHz. Suitable for TDMA, CDMA, and
multicarrier amplifier applications.
GSM Application
• Typical GSM Performance: V
GSM EDGE Application
• Typical GSM EDGE Performance: V
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• 200°C Capable Plastic Package
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with
this part replacement. N suffix added to part number to indicate transition to lead - free
terminations.
Drain- Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for GSM and GSM EDGE base station applications with
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
CW, Full Frequency Band (1805 - 1880 MHz or 1930 - 1990 MHz)
P
1930 - 1990 MHz)
Output Power
Derate above 25°C
Case Temperature 80°C, 60 W CW
Case Temperature 77°C, 25 W CW
out
Power Gain — 15 dB
Drain Efficiency - 50%
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
the MTTF calculators by product.
Power Gain — 15.5 dB
Spectral Regrowth @ 400 kHz Offset = - 62 dBc
Spectral Regrowth @ 600 kHz Offset = - 76 dBc
EVM — 2% rms
= 25 Watts Avg., Full Frequency Band (1805 - 1880 MHz or
C
= 25°C
DD
Characteristic
= 26 Vdc, I
Rating
DD
DD
Operation
= 26 Volts, I
DQ
= 600 mA, P
DQ
= 450 mA,
out
= 60 Watts
Symbol
Symbol
V
R
V
T
P
DSS
T
θJC
GS
stg
D
J
CASE 1486 - 03, STYLE 1
MRF6S18060MR1 MRF6S18060MBR1
CASE 1484 - 04, STYLE 1
Document Number: MRF6S18060
MRF6S18060MBR1
MRF6S18060MR1
MRF6S18060MR1
MRF6S18060MBR1
1800 - 2000 MHz, 60 W, 26 V
TO - 270 WB - 4
TO - 272 WB - 4
LATERAL N - CHANNEL
RF POWER MOSFETs
PLASTIC
PLASTIC
GSM/GSM EDGE
- 65 to +175
Value
- 0.5, +68
- 0.5, +12
Value
0.81
0.95
216
200
1.2
(1)
Rev. 2, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
W
1

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mrf6s18060 Summary of contents

Page 1

... Freescale Semiconductor Technical Data Replaced by MRF6S18060NR1/NBR1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations. RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for GSM and GSM EDGE base station applications with frequencies from 1800 to 2000 MHz ...

Page 2

... Vdc ± 30 mV(rms) MHz Functional Tests (In Freescale Test Fixture, 50 ohm system) V Power Gain Drain Efficiency Input Return Loss Compression Point out 1. Part is internally matched both on input and output. MRF6S18060MR1 MRF6S18060MBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol I DSS I ...

Page 3

... SR2 η D IRL P1dB Min Typ Max = 26 Vdc 450 mA — 15.5 — — 32 — — 2 — — — — — Vdc 600 mA out — 15 — — 50 — — — — 65 — MRF6S18060MR1 MRF6S18060MBR1 Unit rms dBc dBc ...

Page 4

... Microstrip Z6 0.680″ x 0.080″ Microstrip Z7, Z8 0.115″ x 1.000″ Microstrip Figure 1. MRF6S18060MR1(MBR1) Test Circuit Schematic — 1900 MHz Table 6. MRF6S18060MR1(MBR1) Test Circuit Component Designations and Values — 1900 MHz Part C1, C2, C3, C4 6.8 pF 100B Chip Capacitors C5 1.5 pF 100B Chip Capacitor C6 1 ...

Page 5

... Figure 2. MRF6S18060MR1(MBR1) Test Circuit Component Layout — 1900 MHz RF Device Data Freescale Semiconductor C11 C10 MRF6S18060N/NB Rev. 0 MRF6S18060MR1 MRF6S18060MBR1 5 ...

Page 6

... Vdc 1960 MHz OUTPUT POWER (WATTS) out Figure 5. Power Gain versus Output Power MRF6S18060MR1 MRF6S18060MBR1 6 1900 MHz — η IRL Vdc 600 mA DQ 1940 1960 1980 2000 ...

Page 7

... Figure 10. Spectral Regrowth at 400 kHz and 600 kHz versus Frequency = 26 Vdc DD = 450 85_C C −30_C OUTPUT POWER (WATTS) AVG. out Figure 12. Spectral Regrowth at 600 kHz versus Output Power MRF6S18060MR1 MRF6S18060MBR1 2020 = 35 W Avg Vdc DD = 450 Avg. 2000 25_C ...

Page 8

... Figure 13. MTTF Factor versus Junction Temperature MRF6S18060MR1 MRF6S18060MBR1 8 TYPICAL CHARACTERISTICS 90 100 110 120 130 140 150 160 170 180 T , JUNCTION TEMPERATURE (°C) J This above graph displays calculated MTTF in hours x ampere drain current. Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide ...

Page 9

... DD DQ out source load MHz Ω Ω 1930 8.00 - j6.48 2.83 - j5.13 1960 7.57 - j6.82 2.63 - j4.84 1990 7.06 - j7.06 2.44 - j4. Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Test Matching Network Z Z source load Output Matching Network MRF6S18060MR1 MRF6S18060MBR1 9 ...

Page 10

... Microstrip Z6 0.860″ x 0.080″ Microstrip Z7, Z8 0.115″ x 1.000″ Microstrip Figure 15. MRF6S18060MR1(MBR1) Test Circuit Schematic — 1800 MHz Table 7. MRF6S18060MR1(MBR1) Test Circuit Component Designations and Values — 1800 MHz Part C1, C2, C3, C4 6.8 pF 100B Chip Capacitors C5 0.8 pF 600B Chip Capacitor C6 ...

Page 11

... Figure 16. MRF6S18060MR1(MBR1) Test Circuit Component Layout — 1800 MHz RF Device Data Freescale Semiconductor C12 V DS C10 C11 MRF6S18060N/NB Rev. 0 MRF6S18060MR1 MRF6S18060MBR1 11 ...

Page 12

... Avg. out 3 Avg. 1 Avg. 1 0.5 1780 1800 1820 1840 1860 f, FREQUENCY (MHz) Figure 19. Error Vector Magnitude versus Frequency MRF6S18060MR1 MRF6S18060MBR1 12 η IRL Vdc 600 mA DQ 1800 1820 1840 1860 1880 1900 f, FREQUENCY (MHz Watts ...

Page 13

... 1860 MHz − Figure 23. Spectral Regrowth at 600 kHz Vdc 450 mA DQ 1900 1920 T = 25_C Vdc 450 1860 MHz OUTPUT POWER (WATTS) AVG. out versus Output Power MRF6S18060MR1 MRF6S18060MBR1 60 13 ...

Page 14

... Figure 24. Series Equivalent Source and Load Impedance — 1800 MHz MRF6S18060MR1 MRF6S18060MBR1 Ω 1880 MHz f = 1805 MHz Z load f = 1805 MHz f = 1880 MHz Z source Vdc 600 mA out source load MHz Ω Ω 1805 4.16 - j7.56 3.29 - j4.91 1840 3.89 - j7.40 3.10 - j4.69 1880 3 ...

Page 15

... RF Device Data Freescale Semiconductor NOTES MRF6S18060MR1 MRF6S18060MBR1 15 ...

Page 16

... MRF6S18060MR1 MRF6S18060MBR1 16 PACKAGE DIMENSIONS ...

Page 17

... RF Device Data Freescale Semiconductor MRF6S18060MR1 MRF6S18060MBR1 17 ...

Page 18

... MRF6S18060MR1 MRF6S18060MBR1 18 RF Device Data Freescale Semiconductor ...

Page 19

... RF Device Data Freescale Semiconductor MRF6S18060MR1 MRF6S18060MBR1 19 ...

Page 20

... For further information, see http://www.freescale.com or contact your Freescale sales representative. For information on Freescale’s Environmental Products program http://www.freescale.com/epp. MRF6S18060MR1 MRF6S18060MBR1 Document Number: MRF6S18060 Rev. 2, 5/2006 20 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products ...

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