mrf6s18140h Freescale Semiconductor, Inc, mrf6s18140h Datasheet
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... Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts 1200 mA Operation DD ″ Nominal. μ Document Number: MRF6S18140H Rev. 0, 9/2006 MRF6S18140HR3 MRF6S18140HSR3 1805 - 1880 MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465B - 03, STYLE 880 MRF6S18140HR3 ...
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... Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF6S18140HR3 MRF6S18140HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...
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... Z11 0.090″ x 0.485″ x 0.580″ Taper Z12 0.342″ x 1.070″ Microstrip Figure 1. MRF6S18140HR3(HSR3) Test Circuit Schematic Table 5. MRF6S18140HR3(HSR3) Test Circuit Component Designations and Values Part B1 Ω, 100 MHz Small Ferrite Beads, Surface Mount C1 Chip Capacitors C3 0 ...
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... MRF6S18140H/HS Rev. 1 Figure 2. MRF6S18140HR3(HSR3) Test Circuit Component Layout MRF6S18140HR3 MRF6S18140HSR3 4 C10 C11 C12 C13 C16 C2 C14 C15 RF Device Data Freescale Semiconductor ...
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... Watts Avg. out −12 0 −18 −4 −24 −8 −12 −30 −16 −36 −20 −42 1900 1920 = 60 Watts Avg. out = 28 Vdc = 600 mA 1800 mA 1500 mA 900 mA 1200 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S18140HR3 MRF6S18140HSR3 400 5 ...
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... Figure 10 Carrier N - CDMA ACPR, IM3, Power Gain MRF6S18140HR3 MRF6S18140HSR3 6 TYPICAL CHARACTERISTICS − Vdc −10 Two−Tone Measurements, −15 (f1 + f2)/2 = Center Frequency of 1840 MHz −20 −25 3rd Order −30 −35 −40 −45 5th Order − ...
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... Life tests at elevated temperatures have correlated to better than ±10% of the theoretical prediction for metal failure. Divide 2 MTTF factor by I for MTTF in a particular application 1200 1840 MHz 100 200 P , OUTPUT POWER (WATTS) CW out 210 230 250 2 MRF6S18140HR3 MRF6S18140HSR3 32 V 260 7 ...
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... Carriers. ACPR Measured in 30 kHz Bandwidth @ ±885 kHz Offset. IM3 Measured in 1.2288 MHz Bandwidth @ ±2.5 MHz Offset. PAR = 9 0.001 0.01% Probability on CCDF. 0.0001 PEAK−TO−AVERAGE (dB) Figure 14 Carrier CCDF N - CDMA MRF6S18140HR3 MRF6S18140HSR3 8 0 −10 −20 −30 −40 −50 −60 −70 −80 ...
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... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Matching Under Test Network Z Z source load load W Output Matching Network MRF6S18140HR3 MRF6S18140HSR3 9 ...
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... D bbb (INSULATOR) bbb (LID) ccc (FLANGE) MRF6S18140HR3 MRF6S18140HSR3 10 PACKAGE DIMENSIONS Q 2X bbb (LID) ccc (INSULATOR) aaa SEATING ...
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... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date Number • Initial Release of Data Sheet Sept. 2006 0 RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF6S18140HR3 MRF6S18140HSR3 11 ...
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... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S18140HR3 MRF6S18140HSR3 Document Number: MRF6S18140H Rev. 0, 9/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...