mrf6s19200h Freescale Semiconductor, Inc, mrf6s19200h Datasheet
mrf6s19200h
Available stocks
Related parts for mrf6s19200h
mrf6s19200h Summary of contents
Page 1
... MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2008. All rights reserved. RF Device Data Freescale Semiconductor Document Number: MRF6S19200H MRF6S19200HR3 MRF6S19200HSR3 = 28 Volts 1930 - 1990 MHz AVG ...
Page 2
... CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss 1. Part internally matched both on input and output. MRF6S19200HR3 MRF6S19200HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS ...
Page 3
... W Avg. G out F Φ Delay = 130 W CW, ΔΦ out ΔG Min Typ Max = 1600 mA, 1930 - 1990 MHz Bandwidth — 20 — — 50 — — 0.6 — — 1.94 — — 2.44 — — 59.4 — — 0.04 — MRF6S19200HR3 MRF6S19200HSR3 Unit MHz MHz dB ° ns ° dB/°C 3 ...
Page 4
... Z6 0.418″ x 1.040″ Microstrip Z7 0.103″ x 1.203″ Microstrip Z8, Z9 0.198″ x 0.160″ Microstrip Figure 1. MRF6S19200HR3(HSR3) Test Circuit Schematic Table 5. MRF6S19200HR3(HSR3) Test Circuit Component Designations and Values Part B1 Short Ferrite Bead C1 10 μ Electrolytic Capacitor C2, C9, C10 0.1 μF, 100 V Capacitors ...
Page 5
... Figure 2. MRF6S19200HR3(HSR3) Test Circuit Component Layout RF Device Data Freescale Semiconductor C5 C4 C10 C6 C7 C11 C9 C14 C13 C15 C12 C8 MRF6S19200H/HS Rev. 2 MRF6S19200HR3 MRF6S19200HSR3 5 ...
Page 6
... Vdc 1955 MHz 1965 MHz DD Two−Tone Measurements, 10 MHz Tone Spacing OUTPUT POWER (WATTS) PEP out Figure 5. Two - Tone Power Gain versus Output Power MRF6S19200HR3 MRF6S19200HSR3 6 TYPICAL CHARACTERISTICS Vdc (Avg.) DD out I = 1600 mA, Single−Carrier W−CDMA DQ 3 ...
Page 7
... IM3−U IM5−U IM7−L IM5−L IM7−U 10 TWO−TONE SPACING (MHz) versus Tone Spacing 1600 1960 MHz 100 P , OUTPUT POWER (WATTS) CW out MRF6S19200HR3 MRF6S19200HSR3 100 120 140 7 ...
Page 8
... Channel Bandwidth @ ±5 MHz Offset. 0.001 Input Signal PAR = 7 0.01% Probability on CCDF 0.0001 PEAK−TO−AVERAGE (dB) Figure 13. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal MRF6S19200HR3 MRF6S19200HSR3 8 TYPICAL CHARACTERISTICS 110 130 150 170 190 210 T , JUNCTION TEMPERATURE (° Avg., and η ...
Page 9
... Z = Test circuit impedance as measured from source gate to ground Test circuit impedance as measured load from drain to ground. Device Input Under Matching Test Network Z Z source load Z source f = 1880 MHz load W Output Matching Network MRF6S19200HR3 MRF6S19200HSR3 9 ...
Page 10
... B 4X (LID (FLANGE) D bbb (LID) ccc M (INSULATOR) bbb SEATING T PLANE A A (FLANGE) MRF6S19200HR3 MRF6S19200HSR3 10 PACKAGE DIMENSIONS Q 2X bbb (INSULATOR) bbb ccc aaa ccc ...
Page 11
... AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins • EB212: Using Data Sheet Impedances for RF LDMOS Devices The following table summarizes revisions to this document. Revision Date 0 Mar. 2008 • Initial Release of Data Sheet RF Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF6S19200HR3 MRF6S19200HSR3 11 ...
Page 12
... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S19200HR3 MRF6S19200HSR3 Document Number: MRF6S19200H Rev. 0, 3/2008 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...