mrf6s19120h Freescale Semiconductor, Inc, mrf6s19120h Datasheet

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mrf6s19120h

Manufacturer Part Number
mrf6s19120h
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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Part Number:
mrf6s19120hSR3
Manufacturer:
FREESCALE
Quantity:
20 000
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical Single - Carrier N - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 1960 MHz, 120 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Lower Thermal Resistance Package
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• Low Gold Plating Thickness on Leads, 40
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for N - CDMA base station applications with frequencies from 1930
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
1000 mA, P
Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth =
1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF.
Output Power
Applications
Derate above 25°C
Case Temperature 80°C, 120 W CW
Case Temperature 73°C, 19 W CW
Power Gain — 15 dB
Drain Efficiency — 21.5%
ACPR @ 885 kHz Offset — - 54 dBc in 30 kHz Bandwidth
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
out
= 19 Watts Avg., Full Frequency Band, IS - 95 CDMA (Pilot,
C
= 25°C
Characteristic
Rating
DD
Operation
μ
″ Nominal.
DD
= 28 Volts, I
DQ
=
Symbol
Symbol
V
R
V
T
P
T
DSS
T
θJC
GS
stg
D
C
J
Document Number: MRF6S19120H
CASE 465 - 06, STYLE 1
MRF6S19120HR3 MRF6S19120HSR3
1930 - 1990 MHz, 19 W AVG., 28 V
MRF6S19120HSR3
MRF6S19120HR3
MRF6S19120HR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 780
SINGLE N - CDMA
- 65 to +150
Value
- 0.5, +68
- 0.5, +12
Value
CASE 465A - 06, STYLE 1
0.43
0.45
407
150
200
2.3
MRF6S19120HSR3
(1,2)
NI - 780S
Rev. 1, 5/2006
W/°C
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
°C
W
1

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mrf6s19120h Summary of contents

Page 1

... Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts Operation DD ″ Nominal. μ Document Number: MRF6S19120H Rev. 1, 5/2006 MRF6S19120HR3 MRF6S19120HSR3 1930 - 1990 MHz AVG SINGLE N - CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF6S19120HR3 ...

Page 2

... Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier. ACPR measured in 30 kHz Channel Bandwidth @ ±885 kHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S19120HR3 MRF6S19120HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS ...

Page 3

... Microstrip Z4 0.320″ x 1.100″ Microstrip Z5 0.093″ x 1.100″ Microstrip Z6 0.160″ x 1.098″ Microstrip Figure 1. MRF6S19120HR3(SR3) Test Circuit Schematic Table 5. MRF6S19120HR3(SR3) Test Circuit Component Designations and Values Part B1 Short RF Bead C1 Chip Capacitors C3, C4 5.1 pF Chip Capacitors C5 ...

Page 4

... Figure 2. MRF6S19120HR3(SR3) Test Circuit Component Layout MRF6S19120HR3 MRF6S19120HSR3 C13 C11 C10 C6 C8 C12 C14 C2 MRF6S19120 Rev Device Data Freescale Semiconductor ...

Page 5

... Watts Avg. out = 28 Vdc = 500 mA 1500 mA 750 mA 1250 mA 1000 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S19120HR3 MRF6S19120HSR3 300 5 ...

Page 6

... Vdc DD η 1000 1990 MHz OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19120HR3 MRF6S19120HSR3 6 TYPICAL CHARACTERISTICS P1dB = 51.9 dBm (154. ...

Page 7

... FREQUENCY (MHz) MRF6S19120HR3 MRF6S19120HSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 8

... Z load Z Z Figure 15. Series Equivalent Source and Load Impedance MRF6S19120HR3 MRF6S19120HSR3 2020 MHz = 10 Ω 1930 MHz f = 2020 MHz Z source f = 1930 MHz Vdc 1000 mA Avg out source load MHz Ω Ω 1930 3.03 - j5.14 1.52 - j1.77 1960 2.94 - j4.54 1.51 - j1.37 1990 2.75 - j4.34 1.38 - j1.20 2020 2 ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF6S19120HR3 MRF6S19120HSR3 9 ...

Page 10

... MRF6S19120HR3 MRF6S19120HSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... S 0.365 0.375 9.27 U −−− 0.040 −−− Z −−− 0.030 −−− aaa 0.005 REF 0.127 REF F bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S19120HR3 MRF6S19120HSR3 MAX 20.70 9.91 4.32 12.83 1.14 0.15 1.70 5.33 20.02 20.02 9.53 9.52 1.02 0.76 11 ...

Page 12

... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S19120HR3 MRF6S19120HSR3 Document Number: MRF6S19120H Rev. 1, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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