mrf6s19100n Freescale Semiconductor, Inc, mrf6s19100n Datasheet
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... Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts 950 mA Operation DD Document Number: MRF6S19100N Rev. 1, 5/2006 MRF6S19100NR1 MRF6S19100NBR1 1930- 1990 MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 270 ...
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... Channel Bandwidth @ ±885 kHz Offset. IM3 measured in 1.2288 MHz Channel Bandwidth @ ±2.5 MHz Offset. PAR = 9 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S19100NR1 MRF6S19100NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol I ...
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... Z4 0.505″ x 0.800″ Microstrip Z5 0.323″ x 0.040″ Microstrip Z6 0.160″ x 0.880″ Microstrip Figure 1. MRF6S19100NR1(NBR1) Test Circuit Schematic Table 6. MRF6S19100NR1(NBR1) Test Circuit Component Designations and Values Part C1 10 μ Tantalum Capacitor C2 100 nF Chip Capacitor (1206) C3, C7 5.1 pF 600B Chip Capacitors C4, C8 ...
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... MRF6S19100N/NB, Rev. 5 Figure 2. MRF6S19100NR1(NBR1) Test Circuit Component Layout MRF6S19100NR1 MRF6S19100NBR1 C10 C11 C9 RF Device Data Freescale Semiconductor ...
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... Watts Avg. out 36 35.5 35 34.5 34 −25 −10 −15 −30 −20 −35 −25 −40 −30 −45 −35 −50 −40 2000 = 40 Watts Avg. out 1425 475 mA DQ 1190 mA 950 mA 710 mA 10 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S19100NR1 MRF6S19100NBR1 300 5 ...
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... Vdc 950 1960 MHz OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S19100NR1 MRF6S19100NBR1 6 TYPICAL CHARACTERISTICS P1dB = 51.13 dBm (129. 100 30 Figure 8. Pulse CW Output Power versus = 28 Vdc 950 mA ...
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... MHz Channel BW −IM3 in +IM3 in 1.2288 MHz 1.2288 MHz Integrated BW Integrated BW −ACPR in 30 kHz +ACPR in 30 kHz Integrated BW Integrated BW −6 −4.5 −3 −1.5 0 1.5 3 4.5 f, FREQUENCY (MHz) Figure 14 Carrier N - CDMA Spectrum MRF6S19100NR1 MRF6S19100NBR1 6 7.5 7 ...
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... Z Z Figure 15. Series Equivalent Source and Load Impedance MRF6S19100NR1 MRF6S19100NBR1 Ω load f = 1930 MHz f = 1990 MHz f = 1990 MHz Vdc 950 mA Avg out source load MHz Ω Ω 1930 2.51 - j4.80 1.74 - j3.11 1960 2.31 - j4.54 1.67 - j2.85 1990 2.12 - j4.20 1.63 - j2.55 = Test circuit impedance as measured from source gate to ground ...
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... RF Device Data Freescale Semiconductor NOTES MRF6S19100NR1 MRF6S19100NBR1 9 ...
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... MRF6S19100NR1 MRF6S19100NBR1 10 NOTES RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor NOTES MRF6S19100NR1 MRF6S19100NBR1 11 ...
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... MRF6S19100NR1 MRF6S19100NBR1 12 PACKAGE DIMENSIONS ...
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... RF Device Data Freescale Semiconductor MRF6S19100NR1 MRF6S19100NBR1 13 ...
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... MRF6S19100NR1 MRF6S19100NBR1 14 RF Device Data Freescale Semiconductor ...
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... RF Device Data Freescale Semiconductor MRF6S19100NR1 MRF6S19100NBR1 15 ...
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... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S19100NR1 MRF6S19100NBR1 Document Number: MRF6S19100N Rev. 1, 5/2006 16 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...