mrf6s23100h Freescale Semiconductor, Inc, mrf6s23100h Datasheet
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... Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts 1000 mA Operation DD ″ Nominal. μ Document Number: MRF6S23100H Rev. 1, 5/2006 MRF6S23100HR3 MRF6S23100HSR3 2300 - 2400 MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465 - 06, STYLE 780 MRF6S23100HR3 ...
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... MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S23100HR3 MRF6S23100HSR3 2 = 25°C unless otherwise noted) C Symbol I DSS I ...
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... Microstrip Z6 0.130″ x 0.080″ Microstrip Z7 0.250″ x 0.611″ Microstrip Z8 0.060″ x 0.080″ Microstrip Figure 1. MRF6S23100HR3(HSR3) Test Circuit Schematic Table 5. MRF6S23100HR3(HSR3) Test Circuit Component Designations and Values Part B1 Ferrite Bead C1, C2, C7, C8 5.6 pF Chip Capacitors, B Case C3 0.01 μF Chip Capacitor (1825) C4, C9 2.2 μ ...
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... Figure 2. MRF6S23100HR3(HSR3) Test Circuit Component Layout MRF6S23100HR3 MRF6S23100HSR3 C10 C11 C12 C7 MRF6S23100 Rev 2.0 RF Device Data Freescale Semiconductor ...
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... Watts Avg. out 35.5 35 34.5 34 35.5 −25 −12 −27 −14 −29 −16 −31 −18 −33 −20 −22 −35 2400 = 40 Watts Avg. out 1500 mA = 500 mA 1250 mA 1000 mA 750 100 P , OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S23100HR3 MRF6S23100HSR3 300 5 ...
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... 2350 MHz η 0 OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S23100HR3 MRF6S23100HSR3 6 TYPICAL CHARACTERISTICS P1dB = 51.18 dBm (131. 100 Figure 8. Pulse CW Output Power versus η Vdc, I ...
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... W - CDMA TEST SIGNAL +20 +30 0 −10 −20 −30 −40 −50 −60 −IM3 in 3.84 MHz BW −70 −80 −25 − 200 210 2 3.84 MHz Channel BW −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW +IM3 in 3.84 MHz BW −15 −10 − FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6S23100HR3 MRF6S23100HSR3 ...
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... MHz Figure 15. Series Equivalent Source and Load Impedance MRF6S23100HR3 MRF6S23100HSR3 2300 MHz Z source Z load f = 2400 MHz f = 2300 MHz = 25 Ω Vdc 1000 mA Avg out source MHz Ω 2300 12.20 - j6.20 2.06 - j4.69 2310 12.06 - j6.40 2.04 - j4.62 2320 11.91 - j6.56 2.02 - j4.55 2330 11.76 - j6.71 2.01 - j4.48 2340 11.60 - j6.86 1.99 - j4.42 2350 11.44 - j7.00 1.97 - j4.35 2360 11 ...
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... RF Device Data Freescale Semiconductor NOTES MRF6S23100HR3 MRF6S23100HSR3 9 ...
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... MRF6S23100HR3 MRF6S23100HSR3 10 NOTES RF Device Data Freescale Semiconductor ...
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... S 0.365 0.375 9.27 9.52 U −−− 0.040 −−− 1. −−− 0.030 −−− 0.76 aaa 0.005 REF 0.127 REF bbb 0.010 REF 0.254 REF ccc 0.015 REF 0.381 REF STYLE 1: F PIN 1. DRAIN 2. GATE 5. SOURCE MRF6S23100HR3 MRF6S23100HSR3 9.91 4.32 1.14 0.15 1.70 5.33 3.51 9.53 9.52 11 ...
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... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S23100HR3 MRF6S23100HSR3 Document Number: MRF6S23100H Rev. 1, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...