mrf6s21060n Freescale Semiconductor, Inc, mrf6s21060n Datasheet

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mrf6s21060n

Manufacturer Part Number
mrf6s21060n
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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mrf6s21060nBR1
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mrf6s21060nBR1
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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
Freescale Semiconductor
Technical Data
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
tions. To be us ed in Clas s AB for PCN - PCS/c ellular radio, WLL and
TD - SCDMA applications.
• Typical 2 - Carrier W - CDMA Performance: V
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2140 MHz, 60 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• 200_C Capable Plastic Package
• N Suffix Indicates Lead - Free Terminations. RoHS Compliant.
• In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Table 1. Maximum Ratings
Table 2. Thermal Characteristics
Drain - Source Voltage
Gate - Source Voltage
Storage Temperature Range
Operating Junction Temperature
Thermal Resistance, Junction to Case
Designed for W- CDMA base station applications with frequencies from 2110
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
I
Bandwidth = 3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Applications
DQ
Case Temperature 79°C, 60 W CW
Case Temperature 76°C, 14 W CW
Power Gain — 15.5 dB
Drain Efficiency — 26%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Bandwidth
the MTTF calculators by product.
Select Documentation/Application Notes - AN1955.
= 610 mA, P
out
= 14 Watts Avg., Full Frequency Band, Channel
Characteristic
Rating
DD
Operation
DD
= 28 Volts,
Symbol
Symbol
V
R
V
T
DSS
T
θJC
GS
stg
J
Document Number: MRF6S21060N
CASE 1486 - 03, STYLE 1
CASE 1484 - 04, STYLE 1
MRF6S21060NR1 MRF6S21060NBR1
2110 - 2170 MHz, 14 W AVG., 28 V
MRF6S21060NBR1
MRF6S21060NBR1
MRF6S21060NR1
MRF6S21060NR1
TO - 270 WB - 4
TO - 272 WB - 4
LATERAL N - CHANNEL
PLASTIC
PLASTIC
RF POWER MOSFETs
- 65 to +150
Value
2 x W - CDMA
- 0.5, +68
- 0.5, +12
Value
0.89
1.04
200
(1,2)
Rev. 4, 12/2006
°C/W
Unit
Unit
Vdc
Vdc
°C
°C
1

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mrf6s21060n Summary of contents

Page 1

... Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. © Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts, DD Operation DD Document Number: MRF6S21060N Rev. 4, 12/2006 MRF6S21060NR1 MRF6S21060NBR1 2110 - 2170 MHz AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 1486 - 03, STYLE 1 ...

Page 2

... MHz Channel Bandwidth @ ±5 MHz Offset. IM3 measured in 3.84 MHz Bandwidth @ ±10 MHz Offset. PAR = 8 0.01% Probability on CCDF. Power Gain Drain Efficiency Intermodulation Distortion Adjacent Channel Power Ratio Input Return Loss 1. Part is internally matched both on input and output. MRF6S21060NR1 MRF6S21060NBR1 2 Rating 3 = 25°C unless otherwise noted) C Symbol I ...

Page 3

... Microstrip Z7 0.115″ x 0.755″ Microstrip Z8 0.115″ x 1.000″ Microstrip Z9 0.240″ x 1.000″ Microstrip Figure 1. MRF6S21060NR1(NBR1) Test Circuit Schematic Table 6. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values Part C1 100 nF Chip Capacitor C2, C7 4.7 pF Chip Capacitors C3, C8, C9 6.8 pF Chip Capacitors C4, C5, C6, C10, C11 10 μ ...

Page 4

... Figure 2. MRF6S21060NR1(NBR1) Test Circuit Component Layout MRF6S21060NR1 MRF6S21060NBR1 C10 C11 MRF6S21060N Rev Device Data Freescale Semiconductor ...

Page 5

... Watts Avg. out = 28 Vdc 2135 MHz 2145 MHz I = 305 mA DQ 915 mA 610 mA 458 mA 763 OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S21060NR1 MRF6S21060NBR1 100 200 5 ...

Page 6

... Vdc 610 2140 MHz OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21060NR1 MRF6S21060NBR1 6 TYPICAL CHARACTERISTICS P1dB = 49.252 dBm (84. 100 Figure 8. Pulse CW Output Power versus ...

Page 7

... W - CDMA TEST SIGNAL +20 +30 0 −10 −20 −30 −40 −50 −60 −IM3 in 3.84 MHz BW −70 −80 −25 − 200 210 2 3.84 MHz Channel BW −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW +IM3 in 3.84 MHz BW −15 −10 − FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21060NR1 MRF6S21060NBR1 ...

Page 8

... Figure 15. Series Equivalent Source and Load Impedance MRF6S21060NR1 MRF6S21060NBR1 Ω load f = 2110 MHz f = 2170 MHz f = 2170 MHz Vdc 610 mA Avg out source load MHz Ω Ω 2110 7.59 - j8.39 3.31 - j5.35 2140 6.71 - j8.83 3.17 - j5.16 2170 5.84 - j8.62 3.06 - j4. Test circuit impedance as measured from source gate to ground ...

Page 9

... Microstrip Z9 0.680″ x 0.080″ Microstrip Z10 0.115″ x 1.000″ Microstrip Figure 16. MRF6S21060NR1(NBR1) Test Circuit Schematic — SCDMA Table 7. MRF6S21060NR1(NBR1) Test Circuit Component Designations and Values — SCDMA Part C1 100 nF Chip Capacitor C2, C7 4.7 pF Chip Capacitors C3, C8 ...

Page 10

... Figure 17. MRF6S21060NR1(NBR1) Test Circuit Component Layout — SCDMA MRF6S21060NR1 MRF6S21060NBR1 C10 C11 MRF6S21060N Rev Device Data Freescale Semiconductor ...

Page 11

... Adj − Alt− Alt− 7.5 1.28 MHz Channel BW VBW = 300 kHz Sweep Time = 200 ms RBW = 30 kHz +ALT2 in 1.28 MHz BW +3.2 MHz Offset −ALT1 in +ALT1 in 1.28 MHz BW 1.28 MHz BW −1.6 MHz Offset +1.6 MHz Offset 2.5 MHz Span 25 MHz f, FREQUENCY (MHz) MRF6S21060NR1 MRF6S21060NBR1 11 ...

Page 12

... Figure 22. Series Equivalent Input and Load Impedance — SCDMA MRF6S21060NR1 MRF6S21060NBR1 Ω load f = 1950 MHz f = 2070 MHz f = 2070 MHz Vdc 560 load MHz W W 1950 2.227 - j9.127 3.341 - j8.372 1960 2.168 - j8.942 3.239 - j8.218 1970 2 ...

Page 13

... E .551 .559 14 14.2 E1 .353 .357 8.97 9.07 E2 .132 .140 3.35 3.56 E3 .124 .132 3.15 3.35 E4 .270 − − − 6.86 − − − E5 .346 .350 8.79 8.89 F .025 BSC 0.64 BSC b1 .164 .170 4.17 4.32 c1 .007 .011 0.18 0.28 e .106 BSC 2.69 BSC aaa .004 0.10 STYLE 1: PIN 1. DRAIN 2. DRAIN 3. GATE 4. GATE 5. SOURCE MRF6S21060NR1 MRF6S21060NBR1 13 ...

Page 14

... MRF6S21060NR1 MRF6S21060NBR1 14 RF Device Data Freescale Semiconductor ...

Page 15

... RF Device Data Freescale Semiconductor MRF6S21060NR1 MRF6S21060NBR1 15 ...

Page 16

... MRF6S21060NR1 MRF6S21060NBR1 16 RF Device Data Freescale Semiconductor ...

Page 17

... Added TD - SCDMA test circuit schematic, component designations and values, component layout, typical characteristic curves, test signal and series impedance • Added Product Documentation and Revision History Device Data Freescale Semiconductor PRODUCT DOCUMENTATION REVISION HISTORY Description MRF6S21060NR1 MRF6S21060NBR1 17 ...

Page 18

... Denver, Colorado 80217 1 - 800 - 441 - 2447 or 303 - 675 - 2140 Fax: 303 - 675 - 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S21060NR1 MRF6S21060NBR1 Document Number: MRF6S21060N Rev. 4, 12/2006 18 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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