mrf6s21050l Freescale Semiconductor, Inc, mrf6s21050l Datasheet

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mrf6s21050l

Manufacturer Part Number
mrf6s21050l
Description
Rf Power Field Effect Transistors
Manufacturer
Freescale Semiconductor, Inc
Datasheet

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© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applica-
t i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance: V
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 50 Watts CW
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 V
• Integrated ESD Protection
• Designed for Lower Memory Effects and Wide Instantaneous Bandwidth
• Low Gold Plating Thickness on Leads, 40
• RoHS Compliant
• In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Table 1. Maximum Ratings
Freescale Semiconductor
Technical Data
Drain- Source Voltage
Gate- Source Voltage
Total Device Dissipation @ T
Storage Temperature Range
Case Operating Temperature
Operating Junction Temperature
Designed for W - CDMA base station applications with frequencies from 2110
P
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Output Power
Applications
Derate above 25°C
out
Power Gain — 16 dB
Drain Efficiency — 27.7%
IM3 @ 10 MHz Offset — - 37 dBc in 3.84 MHz Channel Bandwidth
ACPR @ 5 MHz Offset — - 40 dBc in 3.84 MHz Channel Bandwidth
= 11.5 Watts Avg., Full Frequency Band, Channel Bandwidth =
C
= 25°C
Rating
DD
Operation
μ
″ Nominal.
DD
= 28 Volts, I
DQ
= 450 mA,
Symbol
V
V
T
P
T
DSS
T
GS
stg
D
C
J
Document Number: MRF6S21050L
2110 - 2170 MHz, 11.5 W AVG., 28 V
CASE 465F - 04, STYLE 1
MRF6S21050LR3 MRF6S21050LSR3
CASE 465E - 04, STYLE 1
MRF6S21050LSR3
MRF6S21050LSR3
MRF6S21050LR3
MRF6S21050LR3
LATERAL N - CHANNEL
RF POWER MOSFETs
NI - 400S
NI - 400
- 65 to +150
2 x W - CDMA
- 0.5, +68
- 0.5, +12
Value
0.86
151
150
200
Rev. 1, 5/2006
W/°C
Unit
Vdc
Vdc
°C
°C
°C
W
1

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mrf6s21050l Summary of contents

Page 1

... Freescale Semiconductor, Inc., 2006. All rights reserved. RF Device Data Freescale Semiconductor = 28 Volts 450 mA Operation DD ″ Nominal. μ Document Number: MRF6S21050L Rev. 1, 5/2006 MRF6S21050LR3 MRF6S21050LSR3 2110 - 2170 MHz, 11.5 W AVG CDMA LATERAL N - CHANNEL RF POWER MOSFETs CASE 465E - 04, STYLE 400 MRF6S21050LR3 ...

Page 2

... MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955. 3. Part is internally matched both on input and output. MRF6S21050LR3 MRF6S21050LSR3 2 = 25°C unless otherwise noted) C Symbol ...

Page 3

... Microstrip Z3 0.435″ x 0.173″ Microstrip Z4 0.073″ x 0.333″ Microstrip Z5 0.070″ x 0.333″ Microstrip Figure 1. MRF6S21050LR3(LSR3) Test Circuit Schematic Table 5. MRF6S21050LR3(LSR3) Test Circuit Component Designations and Values Part B1 Bead, Surface Mount C1, C2, C3, C8 6.8 pF Chip Capacitors C4 0.01 μF Chip Capacitor (1825) C5, C11 2.2 μ ...

Page 4

... bottom top. Figure 2. MRF6S21050LR3(LSR3) Test Circuit Component Layout MRF6S21050LR3 MRF6S21050LSR3 C4, C5* C13 C11 C12 C10 C8 C9 C14 C2 MRF6S21050L Rev Device Data Freescale Semiconductor ...

Page 5

... Watts out = 28 Vdc 2135 MHz 2145 MHz 675 225 mA DQ 560 mA 450 OUTPUT POWER (WATTS) PEP out versus Output Power MRF6S21050LR3 MRF6S21050LSR3 335 mA 100 5 ...

Page 6

... 13.5 DQ η 2140 MHz OUTPUT POWER (WATTS) CW out Figure 10. Power Gain and Drain Efficiency versus CW Output Power MRF6S21050LR3 MRF6S21050LSR3 6 TYPICAL CHARACTERISTICS P1dB = 47.89 dBm (61. 100 Figure 8. Pulse CW Output Power versus Vdc, I ...

Page 7

... W - CDMA TEST SIGNAL +20 +30 0 −10 −20 −30 −40 −50 −60 −IM3 in 3.84 MHz BW −70 −80 −25 − 200 210 2 3.84 MHz Channel BW −ACPR in +ACPR in 3.84 MHz BW 3.84 MHz BW +IM3 in 3.84 MHz BW −15 −10 − FREQUENCY (MHz) Figure 14. 2-Carrier W-CDMA Spectrum MRF6S21050LR3 MRF6S21050LSR3 ...

Page 8

... MHz Z Z Figure 15. Series Equivalent Source and Load Impedance MRF6S21050LR3 MRF6S21050LSR3 Ω load f = 2080 MHz 2200 MHz source f = 2080 MHz Vdc 450 mA 11.5 W Avg out source load MHz Ω Ω 2080 4.09 - j14.65 2.36 - j7.52 2090 3.74 - j13.95 2 ...

Page 9

... RF Device Data Freescale Semiconductor NOTES MRF6S21050LR3 MRF6S21050LSR3 9 ...

Page 10

... MRF6S21050LR3 MRF6S21050LSR3 10 NOTES RF Device Data Freescale Semiconductor ...

Page 11

... D .275 .285 6.98 7.24 E .035 .045 0.89 1.14 F .004 .006 0.10 0. .057 .067 1.45 1.70 K .092 .122 2.34 3.10 M .395 .405 10.03 10.29 N .395 .405 10.03 10.29 R .395 .405 10.03 10.29 S .395 .405 10.03 10.29 aaa .005 REF 0.127 REF bbb .010 REF 0.254 REF ccc .015 REF 0.38 REF M STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE MRF6S21050LR3 MRF6S21050LSR3 11 ...

Page 12

... Denver, Colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 Fax: 303 - 675- 2150 LDCForFreescaleSemiconductor@hibbertgroup.com MRF6S21050LR3 MRF6S21050LSR3 Document Number: MRF6S21050L Rev. 1, 5/2006 12 Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document ...

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