st2308 Stanson Technology Co., Ltd., st2308 Datasheet

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st2308

Manufacturer Part Number
st2308
Description
N Channel Enhancement Mode Mosfet
Manufacturer
Stanson Technology Co., Ltd.
Datasheet
DESCRIPTION
DESCRIPTION
DESCRIPTION
DESCRIPTION
ST2308 is the N-Channel logic enhancement mode power field effect transistors are
produced using high cell density, DMOS trench technology.This high density process is
especially tailored to minimize on-state resistance.These devices are particularly
suited for low voltage application such as cellular phone and notebook computer
power management and other battery powered circuits where high-side switching,
and low in-line power loss are needed in a very small outline surface mount package.
PIN
PIN
PIN
PIN CONFIGURATION
SOT-23
SOT-23
SOT-23
SOT-23-3L
PART
PART
PART
PART MARKING
SOT-23
SOT-23
SOT-23
SOT-23-2L
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
www.stansontech.com
CONFIGURATION
CONFIGURATION
CONFIGURATION
Y: Year Code
1.Gate
MARKING
MARKING
MARKING
-3L
-3L
-3L
-2L
-2L
-2L
G G G G
1 1 1 1
1 1 1 1
08YW
08YW
08YW
08YW
2.Source
D D D D
3 3 3 3
3 3 3 3
W: Week Code
S S S S
2 2 2 2
2 2 2 2
3.Drain
FEATURE
FEATURE
N Channel Enhancement Mode MOSFET
FEATURE
FEATURE
20V/2.0A, R
20V/1.5A, R
20V/1.0A, R
Super high density cell design for
extremely low R
Exceptional on-resistance and maximum
DC current capability
SOT-23-3L package design
@VGS = 4.5V
@VGS = 1.8V
@VGS = 2.5V
DS(ON)
DS(ON)
DS(ON)
ST
ST
DS(ON)
ST
ST2308
= 380mΩ (Typ.)
= 450 mΩ
= 800 mΩ
2308
2308
2308
ST2308 2009. V1
2.0A

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st2308 Summary of contents

Page 1

... DESCRIPTION DESCRIPTION DESCRIPTION ST2308 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package ...

Page 2

... Typical Typical V DSS V GSS T =25℃ =70 ℃ =25℃ 1. =70 ℃ -55/150 J T -55/150 STG R 150 θJA 2308 2308 2308 2.0A Unit Unit Unit Unit 20 V ± 2 0.8 ℃ ℃ ℃ /W ST2308 2009. V1 ...

Page 3

... V =4.5V t GEN d(off) =6 Ω 2308 2308 ST ST2308 2308 2.0A Min Min Typ Typ Max Max Unit Unit Min Min Typ Typ Max Max Unit Unit 20 V 0.35 1.0 V 100 0.15 0.38 Ω 0.21 0.45 0.32 0.80 2.6 S 0.8 1.2 V 1.2 1.5 0.2 nC 0.3 110 1.2 2.8 ST2308 2009. V1 ...

Page 4

... CHARACTERICTICS (25 ℃ Unless noted) TYPICAL TYPICAL TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST ST 2308 2308 ST ST2308 2308 N Channel Enhancement Mode MOSFET ST2308 2009. V1 2.0A ...

Page 5

... CHARACTERICTICS (25 ℃ Unless noted) TYPICAL TYPICAL TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST ST 2308 2308 ST ST2308 2308 N Channel Enhancement Mode MOSFET ST2308 2009. V1 2.0A ...

Page 6

... SOT-23 SOT-23 SOT-23 SOT-23-3L -3L -3L -3L PACKAGE PACKAGE PACKAGE PACKAGE OUTLINE OUTLINE OUTLINE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST ST 2308 2308 ST ST2308 2308 N Channel Enhancement Mode MOSFET ST2308 2009. V1 2.0A ...

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