st2308 Stanson Technology Co., Ltd., st2308 Datasheet
st2308
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st2308 Summary of contents
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... DESCRIPTION DESCRIPTION DESCRIPTION ST2308 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package ...
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... Typical Typical V DSS V GSS T =25℃ =70 ℃ =25℃ 1. =70 ℃ -55/150 J T -55/150 STG R 150 θJA 2308 2308 2308 2.0A Unit Unit Unit Unit 20 V ± 2 0.8 ℃ ℃ ℃ /W ST2308 2009. V1 ...
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... V =4.5V t GEN d(off) =6 Ω 2308 2308 ST ST2308 2308 2.0A Min Min Typ Typ Max Max Unit Unit Min Min Typ Typ Max Max Unit Unit 20 V 0.35 1.0 V 100 0.15 0.38 Ω 0.21 0.45 0.32 0.80 2.6 S 0.8 1.2 V 1.2 1.5 0.2 nC 0.3 110 1.2 2.8 ST2308 2009. V1 ...
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... CHARACTERICTICS (25 ℃ Unless noted) TYPICAL TYPICAL TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST ST 2308 2308 ST ST2308 2308 N Channel Enhancement Mode MOSFET ST2308 2009. V1 2.0A ...
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... CHARACTERICTICS (25 ℃ Unless noted) TYPICAL TYPICAL TYPICAL TYPICAL CHARACTERICTICS CHARACTERICTICS CHARACTERICTICS STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST ST 2308 2308 ST ST2308 2308 N Channel Enhancement Mode MOSFET ST2308 2009. V1 2.0A ...
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... SOT-23 SOT-23 SOT-23 SOT-23-3L -3L -3L -3L PACKAGE PACKAGE PACKAGE PACKAGE OUTLINE OUTLINE OUTLINE OUTLINE STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.stansontech.com ST ST 2308 2308 ST ST2308 2308 N Channel Enhancement Mode MOSFET ST2308 2009. V1 2.0A ...