mt36ldt3272g-6-x Micron Semiconductor Products, mt36ldt3272g-6-x Datasheet - Page 11

• Manufacturer Part Number: mt36ldt3272g-6-x
• Description: 8, 16, 32 Meg X 72 Buffered Dram Dimms
• Manufacturer: Micron Semiconductor Products

EDO PAGE MODE
AC ELECTRICAL CHARACTERISTICS
(Notes: 5, 6, 7, 8, 9, 10, 11, 12, 31; notes appear on next page and page 13) (V
8, 16, 32 Meg x 72 Buffered DRAM DIMMs
DM77_2.p65 – Rev. 3/00
AC CHARACTERISTICS
PARAMETER
Access time from column address
Column-address setup to CAS#
going HIGH during WRITE
Column-address hold time (referenced to RAS#)
Column-address setup time
Row-address setup time
Column address to WE# delay time
Access time from CAS#
Column-address hold time
CAS# pulse width
CAS# hold time (CBR Refresh)
CAS# to output in Low-Z
Data output hold after CAS# LOW
CAS# precharge time
Access time from CAS# precharge
CAS# to RAS# precharge time
CAS# hold time
CAS# setup time (CBR Refresh)
CAS# to WE# delay time
WRITE command to CAS# lead time
Data-in hold time
Data-in setup time
Output disable
Output enable
OE# hold time from WE# during
READ-MODIFY-WRITE cycle
OE# HIGH hold time from CAS# HIGH
OE# HIGH pulse width
OE# LOW to CAS# HIGH setup time
Output buffer turn-off delay
OE# setup prior to RAS#
during HIDDEN REFRESH cycle
EDO-PAGE-MODE READ or WRITE cycle time
PDE# to valid presence-detect data
PDE# inactive to presence-detects inactive
EDO-PAGE-MODE READ-WRITE cycle time
Access time from RAS#
RAS# to column-address delay time
Row-address hold time
RAS# pulse width
RAS# pulse width (EDO PAGE MODE)
Random READ or WRITE cycle time
RAS# to CAS# delay time
SYMBOL
t
t
t
t
PDOFF
t
t
t
t
t
PRWC
t
t
t
OEHC
t
t
t
t
t
t
t
t
t
t
t
t
t
t
AWD
t
t
CWD
t
RASP
t
t
ACH
CAH
COH
CWL
t
t
OEH
ORD
RAD
RAH
t
CAC
CHR
t
t
RAC
RCD
ASC
ASR
CAS
t
CPA
CRP
CSH
t
OEP
OES
OFF
t
RAS
t
CLZ
CSR
AA
DH
OD
AR
DS
OE
PD
RC
CP
PC
11
MIN
50
12
36
44
13
10
36
30
13
20
49
50
84
-2
2
5
8
6
2
3
8
7
8
0
6
5
5
4
2
0
2
7
7
9
Micron Technology, Inc., reserves the right to change products or specifications without notice.
-5
125,000
10,000
10,000
MAX
30
18
33
12
12
17
10
50
BUFFERED DRAM DIMMs
DD
MIN
104
15
43
51
15
10
10
10
43
37
10
15
10
25
58
10
60
60
12
-2
2
5
8
2
3
7
0
8
5
5
2
0
2
8
= +3.3V ±0.3V)
8, 16, 32 MEG x 72
-6
125,000
10,000
10,000
MAX
35
20
40
15
15
20
10
60
UNITS
©2000, Micron Technology, Inc.
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ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
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ns
ns
ns
ns
ns
NOTES
12, 13
10, 14
11, 16
12, 18
12, 16
12, 13
10, 17
11, 17
19, 20
23, 24
24, 25
10
11
12
10
10
15
10
10
11
18
11
21
21
12
22
11