mc33662 Freescale Semiconductor, Inc, mc33662 Datasheet
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... The three 33662 versions are designed to operate at different maximum baud rates. The MC33662LEF and MC33662SEF offer a normal baud rate (20 kbps), and the MC33662JEF, a slow baud rate (10 kbps). They integrate a fast baud rate (above 100 kbps), as reported by the RXD pin for test and programming modes. They provide ...
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... DEVICE VARIATIONS Table 1. Device Variations Freescale Part No. (Add an R2 suffix for Tape and Reel orders) MC33662LEF MC33662SEF MC33662JEF 33662 2 DEVICE VARIATIONS Temperature Range (T Maximum Baud Rate 20 kbps 20 kbps with restricted limits for transmitter and receiver symmetry 10 kbps ) Package 125°C ...
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200 kΩ RXD TXD WAKE Figure 2. 33662 Simplified Internal Block Diagram Analog Integrated Circuit Device Data Freescale Semiconductor INTERNAL BLOCK DIAGRAM INH_ON EN-SLEEP Control Unit RXD_INT EN_RXD LIN_EN 35 μΑ TXD_INT INTERNAL BLOCK DIAGRAM VSUP INH ...
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PIN CONNECTIONS Table 2. 33662 8-SOICN Pin Definitions A functional description of each pin can be found in the Pin PIN NAME Pin Function 1 RXD Output 2 EN Input 3 WAKE Input 4 TXD Input 5 GND Ground 6 ...
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Table 3. Maximum Ratings All voltages are with respect to ground, unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device. Ratings ELECTRICAL RATINGS Power Supply Voltage Normal Operation (DC) Transient input voltage with ...
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ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS Table 3. Maximum Ratings (continued) All voltages are with respect to ground, unless otherwise noted. Exceeding these ratings may cause a malfunction or permanent damage to the device. Ratings ELECTRICAL RATINGS (CONTINUED) ESD Capability - AECQ100 ...
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Table 4. Limits / Maximum Test Voltage for Transient Immunity Tests Test Pulse V [ -100 2a +75 3a -150 3b +100 DUT GND Figure 4. Test Circuit for Transient Test Pulses (VSUP) DUT DUT GND Figure 5. ...
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ELECTRICAL CHARACTERISTICS MAXIMUM RATINGS DUT GND Figure 7. Test Circuit for Transient Test Pulses (INH) 33662 8 DUT Transient Pulse 1.0 nF Generator INH Note Waveform per ISO 7637-2. Test Pulses 1, 2a, 3a, 3b. (Note) GND Analog Integrated Circuit ...
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STATIC ELECTRICAL CHARACTERISTICS Table 5. Static Electrical Characteristics Characteristics under conditions 7.0 V ≤ V values reflect the approximate parameter means at T Characteristic VSUP PIN (DEVICE POWER SUPPLY) Nominal Operating Voltage (4) Functional Operating Voltage Load Dump Power-On Reset ...
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ELECTRICAL CHARACTERISTICS STATIC ELECTRICAL CHARACTERISTICS Table 5. Static Electrical Characteristics (continued) Characteristics under conditions 7.0 V ≤ V values reflect the approximate parameter means at T Characteristic LIN PHYSICAL LAYER - TRANSCEIVER LIN (6) Operating Voltage Range Supply Voltage Range ...
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Table 5. Static Electrical Characteristics (continued) Characteristics under conditions 7.0 V ≤ V values reflect the approximate parameter means at T Characteristic INH OUTPUT PIN Driver ON Resistance (Normal Mode INH Current load capability From 7.0 ...
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ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTIC DYNAMIC ELECTRICAL CHARACTERISTIC Table 6. Dynamic Electrical Characteristics Characteristics under conditions 7.0 V ≤ V values reflect the approximate parameter means at T Characteristic LIN PHYSICAL LAYER DRIVER CHARACTERISTICS FOR NORMAL SLEW RATE - 20.0 ...
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Table 6. Dynamic Electrical Characteristics (continued) Characteristics under conditions 7.0 V ≤ V values reflect the approximate parameter means at T Characteristic Notes 1 1.0 kΩ, 6 660 Ω 500 Ω. Measurement thresholds: ...
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ELECTRICAL CHARACTERISTICS DYNAMIC ELECTRICAL CHARACTERISTIC Table 6. Dynamic Electrical Characteristics (continued) Characteristics under conditions 7.0 V ≤ V values reflect the approximate parameter means at T Characteristic LIN PHYSICAL LAYER RECEIVER CHARACTERISTICS WITH TIGHTEN LIMITS 33662S DEVICE (21) Propagation Delay ...
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Table 6. Dynamic Electrical Characteristics (continued) Characteristics under conditions 7.0 V ≤ V values reflect the approximate parameter means at T Characteristic Notes 20. V from 7 bus load R SUP BUS signal to LIN signal threshold ...
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ELECTRICAL CHARACTERISTICS TIMING DIAGRAMS TXD TBIT t BUS_DOM V LIN_REC 74. SUP REC(MAX) 58. SUP DOM(MAX) LIN 42. SUP REC(MIN) 28. SUP DOM(MIN) RXD Output of receiving Node 1 t REC_PDF(1) RXD ...
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TXD V LIN_REC V BUSREC V BUSDOM t TRAN_PDF60% t TRAN_PDF40% V LIN_REC 60 SUP BUSREC 40% V SUP V BUSDOM RXD t REC_PDF V LIN_REC 60 SUP BUSREC 40% V SUP V BUSDOM RXD t ...
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ELECTRICAL CHARACTERISTICS FUNCTIONAL DIAGRAMS EN INH t LWUE TXD t FIRST_DOM LIN RXD (High Z) WAKE Figure 14. EN Pin Wake-up with TXD High WAKE WAKE after deglitcher t WF INH t FIRST_DOM EN TXD LIN RXD Awake Mode (High ...
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WAKE WAKE after deglitcher t WF INH t FIRST_DOM EN TXD LIN RXD Awake Mode (High Z) Figure 18. WAKE Pin Wake-up with TXD Low INH EN TXD LIN RXD WAKE Device in Communication Mode Figure 20. LIN Bus Wake-up ...
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ELECTRICAL CHARACTERISTICS FUNCTIONAL DIAGRAMS EN pin EN internal signal EN pin EN internal signal EN pin EN internal signal EN TXD LIN RXD Figure 22. Fast Baud Rate Selection (Toggle Function) EN TXD (12.5 μ LIN RXD Figure ...
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VSUP POR (3.5-5.3 V) 160 µs EN INH t FIRST_DOM (High or Low) TXD LIN Awake Mode RXD (High Z) *: this parameter is guaranteed by design INH EN TXD LIN RXD WAKE WAKE after deglitcher Analog Integrated Circuit Device ...
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ELECTRICAL CHARACTERISTICS FUNCTIONAL DIAGRAMS INH t LWUE EN TXD No communication LIN allowed (High Z) RXD WAKE (case 1) WAKE after deglitcher (case 1) Preparation to Device in Sleep Mode Communication Mode t < The device does not ...
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The 33662L, 33662J, and 33662S are a physical layer component dedicated to automotive LIN sub-bus applications. The 33662L and 33662S features include a 20 kbps baud rate and the 33662J a 10 kbps baud rate. They integrate fast baud rate ...
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FUNCTIONAL DESCRIPTION FUNCTIONAL PIN DESCRIPTION Rate exit (See Figure 23). The device enters into Fast Baud Rate at room and hot temperature. DATA INPUT PIN (TXD) The TXD input pin is the MCU interface to control the state of the ...
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FUNCTIONAL DEVICE OPERATION As described below and depicted in Table 7, the 33662L, 33662J, and 33662S have two operational modes, Normal and Sleep. In addition, there are two transitional modes: Awake mode and Preparation to Sleep mode. The Awake mode ...
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FUNCTIONAL DEVICE OPERATION OPERATIONAL MODES transition. This is illustrated in Figure 16 wake-up is detected (during the dominant to recessive transition), the device enters into Awake mode, with INH HIGH and RXD pulled LOW. Once in the Awake mode, the ...
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Power Up V > V SUP POR EN LOW to HIGH for t > t Awake Internal WAKE changes during t LIN bus dominant pulse (31) for t > t WUF or WAKE pin state (32) changes for t > ...
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TYPICAL APPLICATIONS The 33662 can be configured for several applications. Figure 30 and 31 show master and slave node applications. An additional pull-up resistor of 1.0 kΩ in series with a diode C1 D1 VBAT 22µ 2.2kΩ ...
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Important For the most current revision of the package, visit www.Freescale.com and do a keyword search on the 98A drawing number below. Analog Integrated Circuit Device Data Freescale Semiconductor PACKAGING PACKAGE DIMENSIONS EF SUFFIX 8-PIN 98ASB42564B REVISION V PACKAGING PACKAGE ...
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PACKAGING PACKAGE DIMENSIONS 33662 30 EF SUFFIX 8-PIN 98ASB42564B REVISION V Analog Integrated Circuit Device Data Freescale Semiconductor ...
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REVISION DATE 3.0 8/2011 4.0 9/2011 Analog Integrated Circuit Device Data Freescale Semiconductor REVISION HISTORY DESCRIPTION OF CHANGES Initial release Changed the PC part numbers in the Ordering Information Table to MC REVISION HISTORY PACKAGE DIMENSIONS 33662 31 ...
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... Limited. The Power Architecture and Power.org word marks and the Power and Power.org logos and related marks are trademarks and service marks licensed by Power.org. All other product or service names are the property of their respective owners. ©2011 Freescale Semiconductor, Inc. MC33662 Rev. 4.0 9/2011 ...