mt29f2g16abdhc-et Micron Semiconductor Products, mt29f2g16abdhc-et Datasheet

mt29f2g16abdhc-et

Manufacturer Part Number

mt29f2g16abdhc-et

Description

2gb, 4gb, 8gb X8, X16 Nand Flash Memory

Manufacturer

Micron Semiconductor Products

Datasheet

1.MT29F2G16ABDHC-ET.pdf (58 pages)

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NAND Flash Memory

MT29F2G08AACWP, MT29F4G08BACWP, MT29F8G08FACWP

For the latest data sheet, refer to the Micron Web site: www.micron.com/products/nand/

Features

• Organization

• READ performance

• WRITE performance

• Endurance: 100,000 PROGRAM/ERASE cycles

• First block (block address 00h) guaranteed to be

• V

• Automated PROGRAM and ERASE

• Basic NAND Flash command set:

• New commands:

• Operation status byte provides a software method of

• READY/BUSY (R/B#) pin provides a hardware

• WP# pin: hardware write protect

PDF: 09005aef814b01a2 / Source: 09005aef814b01c7

2_4_8gb_nand_m49a__1.fm - Rev. D 12/06 EN

– Page size x8: 2,112 bytes (2,048 + 64 bytes)

– Page size x16: 1,056 words (1,024 + 32 words)

– Block size: 64 pages (128K + 4K bytes)

– Device size: 2Gb: 2,048 blocks; 4Gb: 4,096 blocks;

– Random READ: 25µs

– Sequential READ: 30ns (3V x8 only)

– PROGRAM PAGE: 300µs (TYP)

– BLOCK ERASE: 2ms (TYP)

– PAGE READ, READ for INTERNAL DATA MOVE,

– PAGE READ CACHE MODE

– One-time programmable (OTP), including:

– READ UNIQUE ID (contact factory)

– READ ID2 (contact factory)

– PROGRAM/ERASE operation completion

– PROGRAM/ERASE pass/fail condition

– Write-protect status

valid without ECC (up to 1,000 PROGRAM/ERASE

cycles)

detecting:

method of detecting PROGRAM or ERASE cycle

completion

8Gb: 8,192 blocks

RANDOM DATA READ, READ ID, READ STATUS,

PROGRAM PAGE, RANDOM DATA INPUT, PRO-

GRAM PAGE CACHE MODE, PROGRAM for

INTERNAL DATA MOVE, BLOCK ERASE, RESET

OTP DATA PROGRAM, OTP DATA PROTECT,

OTP DATA READ

: 1.70V–1.95V

Products and specifications discussed herein are subject to change by Micron without notice.

or 2.7V–3.6V

2Gb, 4Gb, 8Gb: x8, x16 NAND Flash Memory

Figure 1:

Options

• Density:

• Device width:

• Configuration:

• V

• Third-generation die

• Package:

• Operating temperature:

Notes: 1. Packaged parts are only available for 3V x8

– 2Gb (single die)

– 4Gb (dual-die stack)

– 8Gb (quad-die stack)

– x8

– x16

– 2.7V–3.6V

– 1.70V–1.95V

– 48-Pin TSOP type I (lead-free)

– Commercial (0°C to 70°C)

– Extended (–40°C to +85°C)

Micron Technology, Inc., reserves the right to change products or specifications without notice.

2. For ET devices, contact factory.

# of die # of CE# # of R/B#

devices. For 1.8V or x16 devices, contact

factory.

48-Pin TSOP Type 1

MT29Fxx08x

MT29Fxx16x

Marking

MT29F2G

MT29F4G

MT29F8G

None

Features

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