cy62136ev30 Cypress Semiconductor Corporation., cy62136ev30 Datasheet

no-image

cy62136ev30

Manufacturer Part Number
cy62136ev30
Description
2-mbit 128k X 16 Static Ram
Manufacturer
Cypress Semiconductor Corporation.
Datasheet

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
cy62136ev30LL-45BVXI
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Part Number:
cy62136ev30LL-45BVXI
Manufacturer:
CYPRESS/赛普拉斯
Quantity:
20 000
Part Number:
cy62136ev30LL-45BVXIT
Manufacturer:
Cypress Semiconductor Corp
Quantity:
10 000
Cypress Semiconductor Corporation
Document #: 38-05569 Rev. *B
Features
Note:
Logic Block Diagram
1. For best practice recommendations, please refer to the Cypress application note “System Design Guidelines” on http://www.cypress.com.
• Very high speed: 45 ns
• Wide voltage range: 2.20V–3.60V
• Pin-compatible with CY62136CV30
• Ultra low standby power
• Ultra-low active power
• Easy memory expansion with CE, and OE features
• Automatic power-down when deselected
• CMOS for optimum speed/power
• Offered in a Pb-free 48-ball VFBGA and 44-pin TSOP II
— Typical standby current: 1µA
— Maximum standby current: 7µA
— Typical active current: 2 mA @ f = 1 MHz
packages
A
A
A
A
A
A
A
A
A
A
A
10
6
5
4
3
2
1
0
9
8
7
COLUMN DECODER
DATA IN DRIVERS
RAM Array
128K x 16
198 Champion Court
Functional Description
The CY62136EV30 is a high-performance CMOS static RAM
organized as 128K words by 16 bits. This device features
advanced circuit design to provide ultra-low active current.
This is ideal for providing More Battery Life™ (MoBL
portable applications such as cellular telephones. The device
also has an automatic power-down feature that significantly
reduces power consumption by 80% when addresses are not
toggling. The device can also be put into standby mode
reducing power consumption by more than 99% when
deselected (CE HIGH). The input/output pins (I/O
I/O
(CE HIGH), outputs are disabled (OE HIGH), both Byte High
Enable and Byte Low Enable are disabled (BHE, BLE HIGH),
or during a write operation (CE LOW and WE LOW).
Writing to the device is accomplished by taking Chip Enable
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable
(BLE) is LOW, then data from I/O pins (I/O
written into the location specified on the address pins (A
through A
from I/O pins (I/O
specified on the address pins (A
Reading from the device is accomplished by taking Chip
Enable (CE) and Output Enable (OE) LOW while forcing the
Write Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW,
then data from the memory location specified by the address
pins will appear on I/O
LOW, then data from memory will appear on I/O
the truth table at the back of this data sheet for a complete
description of read and write modes.
2-Mbit (128K x 16) Static RAM
15
) are placed in a high-impedance state when: deselected
16
San Jose
). If Byte High Enable (BHE) is LOW, then data
I/O
I/O
8
0
8
–I/O
–I/O
through I/O
,
BHE
WE
CE
OE
BLE
CA 95134-1709
0
7
15
to I/O
[1]
7
. If Byte High Enable (BHE) is
15
0
Revised January 6, 2006
) is written into the location
through A
CY62136EV30
0
16
through I/O
).
8
408-943-2600
to I/O
MoBL
0
through
15
. See
®
7
), is
) in
®
0
[+] Feedback

Related parts for cy62136ev30

cy62136ev30 Summary of contents

Page 1

... Document #: 38-05569 Rev. *B 2-Mbit (128K x 16) Static RAM Functional Description The CY62136EV30 is a high-performance CMOS static RAM organized as 128K words by 16 bits. This device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life™ (MoBL portable applications such as cellular telephones ...

Page 2

... Document #: 38-05569 Rev I I/O 2 Vcc D Vss Operating ICC (mA) Speed (ns 1MHz [4] [4] Max. Typ. Max. 3 2.5 CY62136EV30 ® MoBL 44 TSOP II (Top View BHE BLE ...

Page 3

... CMOS levels −0.2V, CC –0.2V, V <0.2V (Address and Data Only), – 0.2V, CC – 0. < 0.2V Test Conditions T = 25° MHz CC(typ) CY62136EV30 MoBL [5,6] ............ –0. 0.3V) CC MAX [7] Ambient [7] Range Temperature V CC Industrial –40°C to +85°C 2. [4] Min. Typ. Max. Unit 2 ...

Page 4

... CC V > V – 0. < 0. DATA RETENTION MODE V CC(min) V > 1 CDR > 100 µs or stable at V > 100 µ CC(min.) CC(min.) CY62136EV30 ® MoBL VFBGA TSOP II Package Package Unit °C °C 90% 10% Fall Time = 1 V/ Unit Ω ...

Page 5

... Test Loads and Waveforms” section less than less than HZCE LZCE HZBE LZBE HZOE , BHE and/or BLE = V IL CY62136EV30 MoBL 45 ns Min. Max. Unit ...

Page 6

... Address valid prior to or coincident with CE and BHE, BLE transition LOW. Document #: 38-05569 Rev. *B [14, 15 OHA DOE DATA VALID 50% , BHE and/or BLE = CY62136EV30 ® MoBL DATA VALID HZCE t HZOE t HZBE HIGH IMPEDANCE Page ...

Page 7

... During this period, the I/Os are in output state and input signals should not be applied. Document #: 38-05569 Rev. *B [14, 15 SCE PWE DATA SCE PWE DATA IN CY62136EV30 ® MoBL Page [+] Feedback ...

Page 8

... Write Cycle No. 4 (BHE/BLE Controlled, OE LOW) ADDRESS CE BHE/BLE DATA I/O NOTE 19 Document #: 38-05569 Rev. *B [14, 15] [18 SCE PWE t SD DATA IN HZWE [18 SCE PWE t HZWE t SD DATA IN CY62136EV30 ® MoBL LZWE LZWE Page [+] Feedback ...

Page 9

... Data In (I/O –I/O ); Write 8 15 I/O –I/O in High Package Diagram Package Type 51-85150 48-ball Very Fine Pitch Ball Grid Array (Pb-free) 51-85087 44-pin Thin Small Outline Package II (Pb-free) CY62136EV30 ® MoBL Mode Power Standby ( Active ( Active ( Active ( Active (I ...

Page 10

... 6.00±0.10 SEATING PLANE C Document #: 38-05569 Rev. *B 48-pin VFBGA ( mm) (51-85150) A CY62136EV30 ® MoBL BOTTOM VIEW A1 CORNER Ø0. Ø0. Ø0.30±0.05(48X 1.875 ...

Page 11

... The inclusion of Cypress products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges. 44-pin TSOP II (51-85087) CY62136EV30 ® MoBL ...

Page 12

... Converted from Advanced Information to Final. Changed the address of Cypress Semiconductor Corporation on Page #1 from “3901 North First Street” to “198 Champion Court” Removed 35ns Speed Bin Removed “L” version of CY62136EV30 Changed I (Max) value from 2.5 mA and f=1 MHz ...

Related keywords