w942516ah Winbond Electronics Corp America, w942516ah Datasheet

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w942516ah

Manufacturer Part Number
w942516ah
Description
4m X 4 Banks X 16 Bit Ddr Sdram
Manufacturer
Winbond Electronics Corp America
Datasheet
GENERAL DESCRIPTION
W942516AH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR
SDRAM), organized as 4,194,304 words
To fully comply with the personal computer industrial standard, W942516AH is sorted into three speed
grades: -7, -75 and -8. The -7 is compliant to the 143 MHz/CL2.5 or DDR266/CL2 specification, the -
75 is compliant to the DDR266/CL2.5 specification, the -8 is compliant to the DDR200/CL2
specification
All Inputs reference to the positive edge of CLK (except for DQ, DM, and CKE). The timing reference
point for the differential clock is when the CLK and CLK signals cross during a transition. And Write
and Read data are synschronized with the both edges of DQS (Data Strobe).
By having a programmable Mode Register, the system can change burst length, latency cycle,
interleave or sequential burst to maximize its performance. W942516AH is ideal for main memory in
high performance applications.
FEATURES
KEY PARAMETERS
m process technology, W942516AH delivers a data bandwidth of up to 286M words per second (-7).
2.5V
Up to 143 MHz Clock Frequency
Double Data Rate architecture; two data transfers per clock cycle
Differential clock inputs (CLK and CLK )
DQS is edge-aligned with data for Read; center-aligned with data for Write
CAS Latency: 2 and 2.5
Burst Length: 2, 4, and 8
Auto Refresh and Self Refresh
Precharged Power Down and Active Power-Down
Write Data Mask
Write Latency = 1
8K Refresh cycles / 64 mS
Interface: SSTL-2
Packaged: TSOP II 66 pin, 400 x 875mil , 0.65mm pin pitch
SYM.
t
I
I
I
t
t
RAS
DD1
DD4
DD6
CK
RC
0.2V Power Supply
Clock Cycle Time
Active to Precharge Command Period
Active to Ref/Active Command Period
Operation Current (Single bank)
Burst Operation Current
Self-Refresh Current
DESCRIPTION
4M
CL=2
CL=2.5
4 BANKS
4 banks
- 1 -
PRELIMINARY W942516AH
/MAX.
max.
max.
max.
MIN.
min.
min.
min.
min.
16 bits. Using pipelined architecture and 0.175
16 BIT DDR SDRAM
110mA
165mA
7.5 nS
45 nS
65 nS
7 nS
3mA
Publication Release Date: May 2001
-7
110mA
155mA
7.5 nS
45 nS
65 nS
8 nS
3mA
-75
Revision .0.0
100mA
150mA
10 nS
50 nS
70 nS
8 nS
3mA
-8

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w942516ah Summary of contents

Page 1

... W942516AH is a CMOS Double Data Rate synchronous dynamic random access memory (DDR SDRAM), organized as 4,194,304 words m process technology, W942516AH delivers a data bandwidth 286M words per second (-7). To fully comply with the personal computer industrial standard, W942516AH is sorted into three speed grades: -7, -75 and -8 ...

Page 2

... BS0 26 BS1 W942516AH DQ15 DQ14 62 DQ13 DQ12 59 DQ11 DQ10 56 DQ9 DQ8 ...

Page 3

... REF Voltage Ground Ground for logic circuit inside DDR SDRAM. Separated power from V noise. Separated ground from V buffer noise W942516AH Description A12. A8. (A10 is used for Auto Precharge) ) define the command being CS , used for output buffer, to improve DD , used for output buffer, to improve SS Publication Release Date: May 2001 Revision 0 ...

Page 4

... BANK #0 SENSE AMPLIFIER PREFETCH REGISTER DATA CONTROL CIRCUIT COLUMN DECODER CELL ARRAY BANK #2 SENSE AMPLIFIER NOTE: The cell array configuration is 8912 * 512 * W942516AH COLUMN DECODER CELL ARRAY BANK #1 SENSE AMPLIFIER DQ0 DQ BUFFER DQ15 LDQS, UDQS LDM, UDM COLUMN DECODER CELL ARRAY ...

Page 5

... V -0.3 IL (DC -0.3 ICK (DC V 0.36 ID (DC 0.31 IH (AC) REF (AC) V 0.7 ID (AC Q/2 - 0.2 (AC Q/2 - 0.2 ISO (AC) DD Q+0.9V with a pulse width < W942516AH RATING UNIT -0 +0 -0 °C -55 ~ 150 °C 260 ° TYP. MAX. UNIT 2.5 2.7 V 2.5 VDD ...

Page 6

... Input Capacitance (except for CLK pins) Input Capacitance (CLK pins) DQ, DQS, DM capacitance NC pin capacitance Note: These parameters are periodically sampled and not 100% tested. = 25°C, V (DC Q/2, V (Peak to Peak) = 0.2V) A OUT DD OUT SYMBOL MIN CLK C I W942516AH DELTA MAX. (MAX.) 2.0 3.5 - 2.0 3.5 - 4.0 5.0 0.5 - 1.5 - UNIT ...

Page 7

... All Banks Idle min CK min; CKE > V min; One min; DQ, DM and min RFC = RCD OUT - 7 - W942516AH Max. UNIT -7 - 110 110 100 DD0 I 110 110 100 DD1 DD2P DD2F ...

Page 8

... Row f Row SYMBOL I I( Full Strength I OH (DC (DC (DC) Half Strength I OL (DC W942516AH READ ACT ACT AP AP Bank 3 Bank 2 Bank 0 Row q Col f Row MIN. MAX. UNITS - 0.76 - ...

Page 9

... CH -0.75 -0.75 0.9 1.1 0.9 0.4 0.6 0.4 0.5 0.5 0.5 0.5 1.75 1.75 0.35 0.35 0.35 0.35 0.2 0.2 0.2 0 0.25 0.25 0.4 0.4 0.75 1.25 0.75 -0.25 0.25 -0.25 0.9 0.9 0.9 0.9 2.2 2.2 -0.75 0.75 -0.75 -0.75 0.75 -0.75 0.5 1.5 0 W942516AH (NOTES: 10, 12) -75 -8 UNITS MAX. MIN. MAX 100000 50 100000 0.75 -0.8 0.8 0.75 -0.8 0.8 0.5 0.6 0.55 0.45 0. 0.55 0.45 0.55 min ) ( -1.0 HP 1.1 0.9 1 0.6 0.4 0.6 0.6 0 0.35 0.35 0 ...

Page 10

... SLEW Input signal minmum slew rate V Output timing measurement refernece voltage OTR V DDQ V (max) SWING CLK Vss t SLEW=V IHmin(AC) PARAMETER V (AC) IHmin VREF V (AC) ILmax ILmax(AC W942516AH VALUE UNIT NOTE V +0.31 V REF V -0.31 V REF 0.5xV V DDQ 0.5xV V DDQ 1 (AC 1.5 V 1.0 V/ns ...

Page 11

... V .Transition (rise and fall) of input signals have a fixed IH min(AC) IL max(AC) contains more than one decimal place, the result is rounded 7.5ns = 5.625ns is rounded up to 5.6ns.) ( CLK )}/ ICK V ISO(max W942516AH ICK ID(AC) Publication Release Date: May 2001 Revision 0.0 ...

Page 12

... CKE signal is input level one clock cycle before the commands are issued. n-1 3. These are state designated by the BS0,BS1 signals. 4. LDM, UDM (W942516AH) 5. Power Down Mode can not entry in the burst cycle. (4) CKE CKE DM BS0, ...

Page 13

... READ/READ Term burst, start read: Determine AP L BS,CA,A10 WRIT/WRIT Term burst, start read: Determine AP BS,RA ACT ILLEGAL L BS,A10 PRE/PREA Term burst. precharging X AREF/SELF ILLEGAL L Op-Code MRS/EMRS ILLEGAL - 13 - W942516AH Action Notes 6.7 Publication Release Date: May 2001 Revision 0 ...

Page 14

... X NOP L X BST H BS,CA,A10 READ/READA L BS,CA,A10 WRIT/WRITA H BS,RA ACT L BS,A10 PRE/PREA H X AREF/SELF L Op-Code MRS/EMRS - 14 - W942516AH Action Notes Continue burst to end Continue burst to end ILLEGAL 3 ILLEGAL ILLEGAL 3 ILLEGAL 3 ILLEGAL ILLEGAL ILLEGAL Continue burst to end Continue burst to end ILLEGAL ILLEGAL 3 ILLEGAL 3 ILLEGAL 3 ILLEGAL ...

Page 15

... X X AREF/SELF/MRS/EMRS X X DSL X NOP L X BST X X READ/WRIT X X ACT/PRE/PREA/AREF W942516AH Action Notes Nop->dle after t RC Nop->Idle after t RC ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL ILLEGAL Nop->Enter precharge after t WR Nop->Enter precharge after t WR ILLEGAL ...

Page 16

... Refer to Function Truth Table Enter Power down Enter Power down ILLEGAL ILLEGAL ILLEGAL Power down Refer to Function Truth Table - 16 - W942516AH Action Notes XSNR XSNR ...

Page 17

... AREF IDLE PD PDEX ACT PDEX PD ROW ACTIVE Read Write Read Read A Write A Read A PRE PRE PRE PRE CHARGE PRE - 17 - W942516AH SELF REFRESH AUTO REFRESH POWER DOWN BST Read Read Read A Read A Automatic Sequence Command Sequence Publication Release Date: May 2001 Revision 0.0 ...

Page 18

... The write command performs a Write operation to the bank designated by BS. The write data are latched at both edges of DQS. The length of the write data (Burst Length) and column access sequence (Addressing Mode) must be in the Mode Register at power-up prior to the Write operation. 2-5 Write with Auto Precharge command 0.2V and REF - 18 - W942516AH ...

Page 19

... DLL. Refer to the table for specific codes. 2-10 No-Operation command ( RAS =”H”, CAS =”H”, WE =”H”) The No-Operation command simply performs no operation (same command as Device Deselect). 2-11 Burst Read stop command CK - (BL/ RAS(min W942516AH Publication Release Date: May 2001 Revision 0.0 ...

Page 20

... Read cycle, then the bank is switched to the idle state. This command cannot be interrupted by any other commands. Refer to the diagrams for Read operation. from the end of the Auto Refresh command. When the Auto Refresh from the Bank Activate command, the data is read out sequentially W942516AH ...

Page 21

... Self Refresh mode. In the case of distributed Auto Refresh commands, distributed auto refresh commands must be issued every 7.8us and the last distributed from the bank activate command. The input data is latched RCD . Therefore, each bank must be precharged RAS (max) . RFC - 21 - W942516AH WR Publication Release Date: May 2001 Revision 0.0 to ...

Page 22

... Power Down Mode enter asserting CKE “low” while the device is not running a burst cycle. Taking cke :high” can exit this mode. When CKE goes high operation command must be input at next CLK rising edge. Refer to the diagrams for Power Down Mode W942516AH ...

Page 23

... A3 bit is “0”, Sequential mode is selected. When the A3 bit is “1”, Interleave mode is selected. Both addressing Mode support burst length 2, 4, and 8 words Burst Length Reserved words words words Reserved A3 Addressing mode 0 Sequential 0 Interleave - 23 - W942516AH Publication Release Date: May 2001 Revision 0.0 ...

Page 24

... Data BURST LENGTH 2 words (address bits is A0) No carried from words (address bit A0, A1) Not carried from words(address bits A2, A1 and A0) Not carried from ACCESS ADDRESS - 24 - W942516AH BURST LENGTH 2 words 4 words 8 words ...

Page 25

... Reserved Reserved Reserved 2 Reserved BS1 BS0 A12- Regular MRS cycle 0 1 Extended MRS cycle 1 x Reserved A0 DLL 0 Enable 1 Disable A1 Output driver 0 Full strength 1 Half strength - 25 - W942516AH Publication Release Date: May 2001 Revision 0.0 ...

Page 26

... PACKAGE DIMENSION 66L TSOP - 400 mil - 26 - W942516AH ...

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