nanda9w3m1 Numonyx, nanda9w3m1 Datasheet

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nanda9w3m1

Manufacturer Part Number
nanda9w3m1
Description
256/512-mbit Or 1-gbit X8/x16, 1.8/2.6 V, 528-byte Page Nand Flash And 256/512-mbit X16/x32, 1.8 V Lpsdram, Mcp Or Pop
Manufacturer
Numonyx
Datasheet

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Part Number:
nanda9w3m1AZBC5E
Manufacturer:
ST
0
Features
Flash memory
July 2008
Packages
– MCP (multichip package)
– PoP (package on package)
Device composition
– 1 die of 256 or 512 Mbits or 1 Gbit (x8/x16)
– 1 die of 256 or 512 Mbits (x16 or x32)
Supply voltages
– V
– V
Electronic signature
ECOPACK
Temperature range: –30 to 85 °C
NAND interface
– x8/x16 bus width
– Multiplexed address/data
Page size
– x8 device: (512 + 16 spare) bytes
– x16 device: (256 + 8 spare) words
Block size
– x8 device: (16K + 512 spare) bytes
– x16 device: (8K + 256 spare) words
Page read/program
– Random access: 12 µs (3 V), 15 µs (1.8 V)
– Sequential access: 30 ns (3 V), 50 ns
– Page program time: 200 µs (typ)
Copy back program mode
– Fast page copy without external buffering
Fast block erase
– Block erase time: 2 ms (typ)
– Status register
flash and 256/512-Mbit (x16/x32, 1.8 V) LPSDRAM, MCP or PoP
256/512-Mbit or 1-Gbit (x8/x16, 1.8/2.6 V, 528-byte page) NAND
SLC small page NAND flash memory
SDR/DDR LPSDRAM
(1.8 V)
DDF
DDD
= 1.7 V to 1.95 V or 2.5 V to 3.6 V
= V
®
DDQD
packages
= 1.7 V to 1.95 V
Rev 11
Single or double data rate LPSDRAM
Table 1.
Data integrity
– 100 000 program/erase cycles
– 10 years data retention
Interface: ×16 or ×32 bus width
Deep power-down mode
1.8 V LVCMOS interface
Quad internal banks controlled by BA0, BA1
Automatic and controlled precharge
Auto refresh and self refresh
– 8 192 refresh cycles/64 ms
– Programmable partial array self refresh
– Auto temperature compensated self refresh
Wrap sequence: sequential/interleave
Burst termination by Burst Stop command and
Precharge command
TFBGA107 10.5 × 13 × 1.2 mm (ZBB)
TFBGA149 10 × 13.5 × 1.2 mm (ZBA)
TFBGA137 10.5 × 13 × 1.2 mm (ZBC)
TFBGA152 14 x 14 x 1.1 mm
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Device summary
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www.numonyx.com
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